Continental Device India Limited Data Sheet Page 1 of 3
TIP 41, 41A, 41B, 41C NPN PLASTIC POWER TRANSISTORS
TIP 42, 42A, 42B, 42C PNP PLASTIC POWER TRANSISTORS
General Purpose Amplifier and Switching Applications
ABSOLUTE MAXIMUM RATINGS 41 41A 41B 41C
42 42A 42B 42C
Collector-base voltage (open emitter) VCBO max. 40 60 80 100 V
Collector-emitter voltage (open base) VCEO max. 40 60 80 100 V
Collector current ICmax. 6.0 A
Total power dissipation up to TC = 25°C Ptot max. 65 W
Junction temperature Tjmax. 150 °C
Collector-emitter saturation voltage
IC = 6 A; IB = 0.6 A VCEsat max. 1.5 V
D.C. current gain
IC = 3 A; VCE = 4 V hFE min. 15
max. 75
RATINGS (at TA=25°C unless otherwise specified) 41 41A 41B 41C
Limiting values 42 42A 42B 42C
Collector-base voltage (open emitter) VCBO max. 40 60 80 100 V
Collector-emitter voltage (open base) VCEO max. 40 60 80 100 V
Emitter-base voltage (open collector) VEBO max. 5.0 V
Collector current ICmax. 6.0 A
TIP41, TIP41A, TIP41B, TIP41C
TIP42, TIP42A, TIP42B, TIP42C
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
B
123
J
M
G
D
H
A
OO
K
N
L
FE
CDIM MIN. MAX.
All dimins ions in mm.
A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D0.90
E 1.15 1.40
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43
J0.56
K 12.70 14.73
L 2.80 4.07
M 2.03 2.92
N 31.24
ODEG 7
12
3
4
IS / IECQ C 700000
IS / IECQ C 750100
IS/IS O 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
TO-220 Plastic Package
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Boca Semiconductor Corp (BSC)
Continental Device India Limited Data Sheet Page 2 of 3
Collector current (Peak value) ICM max. 10 A
Base current IBmax. 2.0 A
Total power dissipation up to TC= 25°C Ptot max. 65 W
Derate above 25°C max. 0.52
W/
°
C
Total power dissipation up to TA= 25°C Ptot max. 2.0 W
Derate above 25°C max. 0.016
W/
°
C
Junction temperature Tjmax. 150 °C
Storage temperature Tstg –65 to +150
ºC
THERMAL RESISTANCE
From junction to ambient Rth j–a 62.5
°C/W
From junction to case Rth j–c 1.92
°C/W
CHARACTERISTICS
Tamb = 25°C unless otherwise specified 41 41A 41B 41C
42 42A 42B 42C
Collector cutoff current
IB = 0; VCE = 30 V ICEO max. 0.7 0.7 – – mA
IB = 0; VCE = 60 V ICEO max. – – 0.7 0.7 mA
VBE = 0; VCE = VCEO ICES max. 0.4 mA
Emitter cut-off current
IC = 0; VEB = 5 V IEBO max. 1.0 mA
Breakdown voltages
IC = 30 mA; IB = 0 VCEO(sus)* min. 40 60 80 100 V
IC = 1 mA; IE = 0 VCBO min. 40 60 80 100 V
IE = 1 mA; IC = 0 VEBO min. 5.0 V
Saturation voltage
IC = 6 A; IB = 0.6 A VCEsat* max. 1.5 V
Base-emitter on voltage
IC = 6 A; VCE = 4 V VBE(on)* max. 2.0 V
D.C. current gain
IC = 0.3 A; VCE = 4 V hFE* min. 30
IC = 3 A; VCE = 4 V hFE* min. 15
max. 75
Small-signal current gain
IC = 0.5 A; VCE = 10 V; f = 1 KHz |hfe| min. 20
Transition frequency
IC = 0.5 A; VCE = 10 V; f = 1 MHz fTmin. (1) 3 MHz
* Pulse test: pulse width ≤ 300 µs, duty cycle ≤ 2%.
(1) fT = |hfe|• ftest
TIP41, TIP41A, TIP41B, TIP41C
TIP42, TIP42A, TIP42B, TIP42C
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