Darlington Transistors
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Features:
• Designed for general-purpose amplifier and low speed switching applications
•Collector-emitter sustaining voltage - VCEO (sus) = 60 V (minimum) - TIP120, TIP125
80 V (minimum) - TIP121, TIP126
100 V (minimum) - TIP122, TIP127
•Collector-emitter saturation voltage - VCE (sat) = 2 V (maximum) at IC= 3 A
•Monolithic construction with built-in base-emitter shunt resistors
Pin 1. Base
2.Collector
3. Emitter
4.Collector (Case)
Dimensions Minimum Maximum
A 14.68 15.31
B 9.78 10.42
C 5.01 6.52
D 13.06 14.62
E 3.57 4.07
F 2.42 3.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.2 2.97
L 0.33 0.55
M 2.48 2.98
O 3.7 3.9
Dimensions : Millimetres
NPN PNP
TIP120 TIP 125
TIP121 TIP 126
TIP122 TIP 127
5 A
Darlington
Complementary Silicon
Power Transistors
60 to 400 V
65 W
TO-220
Maximum Ratings
Parameter Symbol
TIP120 TIP121 TIP122
Unit
TIP125 TIP126 TIP127
Collector-Emitter Voltage VCEO 60 80 100
VCollector-Base Voltage VCBO
Emitter-Base Voltage VEBO 5
Collector Current - Continuous
- Peak
IC
ICM
5
8A
Base Current IB120 mA
Total Power Dissipation at TC= 25°C
Derate above 25°C PD65
0.52
W
W / °C
Operating and Storage Junction
Temperature Range TJ, TSTG -65 to +150 °C
Darlington Transistors
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Thermal Characteristics
Characteristic Symbol Maximum Unit
Thermal Resistance Junction to Case Rθjc 1.92 °C / W
Power Derating
PD, Power Dissipation (W)
TC, Temperature (°C)
Electrical Characteristics (TC= 25°C unless otherwise noted)
Characteristic Symbol Minimum Maximum Unit
Off Characteristics
Collector-Emitter Breakdown Voltage (1)
(IC= 30 mA, IB= 0) TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
VCEO (SUS) 60
80
100
- V
Collector Cut off Current
(VCE = 30 V, IB= 0) TIP120, TIP125
(VCE = 40 V, IB= 0) TIP121, TIP126
(VCE = 50 V, IB= 0) TIP122, TIP127
ICEO -0.5
0.5
0.5
mA
Collector Cut off Current
(VCE = 60 V, IB= 0) TIP120, TIP125
(VCE = 80 V, IB= 0) TIP121, TIP126
(VCE = 100 V, IB= 0) TIP122, TIP127
ICBO -0.2
0.2
0.2
Collector Cut off Current
(VEB = 5 V, IC= 0) IEBO - 2
On Characteristics (1)
DC Current Gain
(IC= 0.5 A, VCE = 3 V)
(IC= 3 A, VCE = 3 V)
hFE 1,000
1,000 - -
Collector-Emitter Saturation Voltage
(IC= 3 A, IB= 12 mA)
(IC= 5 A, IB= 20 mA)
VCE (sat) - 2
4V
Base-Emitter on Voltage
(IC= 3 A, VCE = 3 V) VBE (on) - 2.5
Darlington Transistors
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Dynamic Characteristics
Small-Signal Current Gain
(IC= 3 A, VCE = 4 V, f = 1 MHz) hfe 4 - -
Output Capacitance
(VCB = 10 V, IE= 0, f = 0.1 MHz) TIP120, TIP121, TIP122
TIP125, TIP126, TIP127
Cob - 300
250
pF
(1) Pulse Test : Pulse width = 300 µs, duty cycle ≤2%
Figure - 2 Switching Time
IC, Collector Current (A)
IC, Collector Current (A)
T, Time (µs)
Internal Schematic Diagram
PNP
TIP125
TIP126
TIP127
NPN
TIP120
TIP121
TIP122
T, Time (µs)
Figure - 4 Small Signal Current Gain
hFE, Small Signal Current Gain
f, Frequency (KHz) VR, Reverse Voltage (V)
C, Capacitances (pF)
Figure - 5 Capacitances
Figure - 3 Switching Time
Darlington Transistors
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Figure - 6 Active Region Safe Operating Area
IC, Collector Current (A)
There are two limitations on the power handling ability of a transistor:
average junction temperature and second breakdown safe operating
area curves indicate IC - VCE limits of the transistor that must not be
subjected to greater dissipation than the curves indicate
The data of Figure - 6 is based on TJ (PK) = 150°C; TCis variable
depending on power level Second breakdown pulse limits are valid for
duty cycles to 10% provided TJ (PK) ≤150°C, At high case
temperatures, thermal limitation will reduce the power that can be
handled to values less than the limitations imposed by second
breakdown
VCE, Collector Emitter Voltage (V)
Figure - 7 DC Current Gain
hFE, DC Current Gain
IC, Collector Current (A)
hFE, DC Current Gain
IC, Collector Current (A)
Figure - 8 Collector Saturation Region
VCE, Collector Emitter Voltage (V)
IB, Base Current (mA)
VCE, Collector Emitter Voltage (V)
IB, Base Current (mA)
Darlington Transistors
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Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of
it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces
all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use
made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted.
Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising)
is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
Specification Table
IC
A
VCEO
(Maximum)
V
hFE
Minimum
at IC= 3A
Ptot at
25°C
W
Package
Part Number
NPN PNP
5
60
1,000 65 TO-220
TIP120 TIP125
80 TIP121 TIP126
100 TIP122 TIP127
Figure - 9 “ON” Voltage
V, Voltage (V)
IC, Collector Current (A)
V, Voltage (V)
IC, Collector Current (A)
