i T- 35 -(5 SEMICONDUCTORS INC OTE D B sisues0 o000e7? U High Speed Switching Transistors TYPE NO. CASE | Po |BVca0 | LVce0} BVego hee Ale | Vee | @le | ton | ton tr | Cop @T,=25C mW v v v min mox | mA v mA ns ns MHz | pF NPN wa900l TO-106 250 40 15 4.5 40 120 10 0.25 10 12 18 400 WA 9002 TO-106 250 30 12 4.5 30 150 10 0.25 10 15 20 400 WA9003 TO-106 250 18 12 4 25 200 10 0.25 10 15 20 400 WA9021 TO-106 250 40 15 5 30 120 10 0.25 10 30 25 300 WA9022 TO-106 250 25 12 4 30 _ 10 0.4 10 50 70 300 wa9001 TO-18 360 40 15 4.5 40 120 1) 0.25 10 12 18 750 WA9002 TO-18 360 30 12 4.5 30 150 10 0.25 10 15 20 750 WA 9003 TO-18 360 18 12 4 25 200 10 0.25 10 15 20 750 2N 706 TO-18 300 25 15 3 20 _ 10 0.6 10 40 75 200 2N 708 TO-18 360 40 15 5 30 420 10 0.4 10 40 75 300 2N 744 TO.18 300 20 12 5 40 420 10 0.35 10 16 24 300 2N753 TO-18 300 25 15 5 40 120 10 0.6 10 40 75 200 2N 834 TO-18 300 40 _ 5 25 _ 10 0.25 10 33 75 350 2N 914 TO-18 360 40 15 5 30 120 10 0.25 20 a 20 300 2N 2220 TO-18 500 60 30 5 20 60 | 150 0.4 150 35 | 285 250 2N 2221 TO-18 500 60 30 5 40 120 | 150 0.4 150 35 | 285 250 2N 2222 TO-18 500 60 30 5 100 300 | 150 0.4 150 35 | 285 250 2N2222A | TO-18 500 75 40 6 100 300 j{ 150 0.3 150 35 | 285 250 2N 2243 TO-5 800 | 120 80 7 40 120 | 150 0.35 1150 35 | 285 50 11 2N 2243A | TO-5 800 |; 120 80 7 40 120 | 150 0.25 {150 35 | 285 50 | 1 2N 2368 TO-18 360 40 15 4.5 20 60 16 0.25 10 12 15 400 2N 2369 TO-18 360 40 15 4.5 40 120 10 0.25 10 12 18 500 2N2369A | TO-18 360 40 15 4.5 40 120 10 0.3 10 12 18 500 2N 3011 TO-18 360 30 12 5 30 120 10 0.2 10 15 20 400 2N 3014 TO-18 360 40 20 5 30 120 30 0.18 30 16 25 350 2N 3299 TO-5 800 60 30 5 40 120 | 150 0.22 1150 60 | 150 250 2N 3300 TO-5 800 60 30 5 100 300 | 150 0.22 7150 60 | 150 250 2N 3301 TO-18 360 60 30 5 40 120 | 150 0.22 1150 60 | 150 250 2N 3302 TO-18 360 60 30 5 100 300 =| 150 0.22 {150 60 {150 250 2N 3646 TO-106 200 40 15 3 30 120 30 0.2 30 _ 18 350 2N 3903 TO-92A 310 60 40 6 50 150 10 0.2 10 70 (| 225 250 2N 3904 TO-92A | 310 60 40 6 100 300 10 0.2 10 70 {250 300 2N 4274 TO -106 280 30 12 as 20 150 10 0.25 10 12 12 400 2N 4275 TO-106 280 40 15 4.5 20 150 10 0.25 10 12 12 400 2N 5134 TO-106 200 20 10 3.5 20 150 10 0.25 10 18 18 250 DBDuNraanwoaalha & bd RRM DWODOOAUN ED HR Pk NN DB ODMADA RMA AAR RKO KDR ED BSX 20 TO-18 360 40 15 4,5 40 120 10 0.3 10 12 18 500 BSX 21 TO-18 300 | 120 80 5 20 _ 4 0.7 4 40 40 60 BSX 27 TO-18 300 15 6 4 25 125 10 0.38 30 12 12 600 BSY 26 TO-18 360 20 15 5 20 60 10 0.35 10 _ _ BSY 27 TO-18 360 20 15 _ 40 120 10 0.35 10 _ ~ BSY 39 TO.18 300 20 _ 5 40 120 10 0.25 10 14 45 350 BSY 95 TO-18 300 20 15 5 50 200 10 0.35 10 _ _ 200 - PN P 30 120 30 0.15 10 25 35 500 50 150 30 0.15 10 25 35 500 30 150 30 0.25 10 60 90 500 30 120 30 0.15 10 25 35 500 50 150 30 0.15 10 25 35 500 30 150 30 0,25 10 60 90 500 40 120 | 150 0.6 150 75 41150 200 | 1 WA0491 TO-106 250 30 20 WA0492 TO-106 250 25 16 WA0493 - | TO-106 250 15 12 WA0491 TO.18 360 30 20 WA0492 TO-18 360 25 16 WA0493 TO-18 360 15 12 2N 3133 TO-5 600 50 35 aii tt th tT tH O10 bh bk AO DR Sb 28 SEMICONDUCTORS INC O4 D ff araeb50 cooo278 2 ff T-37-15 High Speed Switching Transistors TYPE NO. CASE | Py | 8Vca0| LV ceo | BV E80 bre Ble | Veer} Ble] ton | ton | fr | Cor @T, =25C mW Vv v v min max | mA Vv mA ns ns MHz | pF PNP 2N 3134 TO-5 600 50 35 100 300 | 150 0.6 150 75 | 150 200 | 10 40 120 | 150 0.6 150 75 | 150 200 | 10 100 300 | 150 0.6 150 75 | 100 200 | 10 50 150 | 0.10 | 0.125) 10 20 80 250 8 100 300 | 0.10 ] 0.125) 10 90 | 100 300 8 50 150 10 0.25 10 70 | 225 250 6 50 150 10 0.25 10 70 | 225 250 6 6 6 2N 3135 TO-18 400 50 35 2N 3136 TO-18 400 50 35 2N 3248 TO-18 360 15 12 2N 3249 TO-18 360 15 12 2N 3250 TO-18 360 50 40 2N3250A | TO-18 360 60 60 2N 3251 TO-18 360 30 40 2N3251A | TO-18 360 60 60 2N 3639 TO-106 200 6 2N 3640 TO-106 200 12 12 2N 3905 TO-92A | 310 40 40 2N 3906 TO-92A | 310 40 40 100 300 10 0.25 10 70 | 250 300 100 300 10 0.25 10 70 | 250 300 30 120 10 0.25 10 25 25 500 30 120 10 0.3 10 25 35 500 3.5 50 150 10 0.25 10 70 | 260 200 3.5 100 300 10 0.25 10 70 | 300 250 45 aw abla kB OMnNowmonab dB Oawnu Gus bd 2N 4971 TO-106 200 50 40 40 120 | 150 0.15 | 150 | 150 200 8 2N 4972 TO-106 200 50 40 100 300 | 150 0.4 150 _ _ 200 8 2N 5138 TO-106 200 30 30 50 800 | 0.1 0.25 10 50 | 200 300 5 2N 5139 TO-106 200 20 20 40 _ 10 0.5 50 50 | 200 300 5 2N 5142 TO-105 300 20 20 15 | 300 2 300 | 200 100 |} 10 2N 5143 TO -106 200 20 20 15 | 300 2 300 | 200 100 | 10 BSX 29 TO-18 360 12 12 30 120 30 0.5 100 60 90 400 6 BSY 40 TO-18 300 25 20 20 60 10 0.2 10 25 | 100 140 | BSY 41 TO-18 300 25 20 50 200 10 0.2 10 25 | 100 140} 4349 af T~G/ -o2 O SEMICONDUCTORS INC OTE D i 8136650 0000323 Packaging Information SCR TRIAC 1. CATHODE 1. CATHODE 1. MT 1 2. GATE 2. GATE 2. GATE 3. ANODE 3. ANODE 3. MT 2 ~ go. ba 4 : we SEATIN 210 PACKAGING bare /ti ae ii sear .500 MIN INFORMATION UOEt-stcans Tt _O00 016 * 136 138 ob be sewn ee TO-18 (PLASTIC) TO-92 SCR TRIAC 1. CATHODE 1. CATHODE 1. MT 1 2. GATE 2. GATE 2. GATE 3. ANODE 3. ANODE 3. MT 2 e370 300 aaa ass CATHODE = | see di a 240) oe PLANE B78 Nw 210 500 MIN. | im O19 M40 ie SEATING PLANE ej 70 +0 Go gS 5 TT]. tos 930 | SOO MIN. , , 27 Sas ax om. cia t! WAX x00 MAX."] S5e 3 = 422 ANOOE f % ~ 22 UNF - 2A TO-48D 74 c-04 ee weeps eg eee