© 2003 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 1mA 550 V
VGS(th) VDS = VGS, ID = 8mA 2.5 5.0 V
IGSS VGS = ±30 V, VDS = 0 ±200 nA
IDSS VDS = VDSS TJ = 25°C 100 µA
VGS = 0 V TJ = 125°C5 mA
RDS(on) VGS = 10 V, ID = 0.5 • ID25 72 mΩ
Note 1
DS98999C(10/03)
PLUS 264TM (IXFB)
G = Gate D = Drain
S = Source TAB = Drain
S
G
D(TAB)
HiPerFETTM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
Features
zDouble metal process for low gate
resistance
zUnclamped Inductive Switching (UIS)
rated
zLow package inductance
- easy to drive and to protect
zFast intrinsic rectifier
Applications
zDC-DC converters
zSwitched-mode and resonant-mode
power supplies, >500kHz switching
zDC choppers
zPulse generation
zLaser drivers
Advantages
zPLUS 264TM package for clip or spring
mounting
zSpace savings
zHigh power density
IXFB 72N55Q2 VDSS = 550 V
ID25 = 72 A
RDS(on)= 72 mΩΩ
ΩΩ
Ω
trr ≤ ≤
≤ ≤
≤ 250 ns
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 550 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ550 V
VGS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C72A
IDM TC= 25°C, pulse width limited by TJM 284 A
IAR TC= 25°C72A
EAR TC= 25°C60mJ
EAS TC= 25°C 5.0 J
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS 20 V/ns
TJ≤ 150°C, RG = 2 Ω
PDTC= 25°C 890 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.063 in.) from case for 10 s 300 °C
FcMounting Force 30...120/7.5...27 N/lb
Weight 10 g
Preliminary Data Sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFB 72N55Q2
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 0.5 • ID25 Note 1 40 57 S
Ciss 10500 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1500 pF
Crss 230 pF
td(on) 30 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 23 ns
td(off) RG = 1 Ω (External) 58 ns
tf10 ns
Qg(on) 258 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 65 nC
Qgd 123 nC
RthJC 0.14 K/W
RthCK 0.13 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 72 A
ISM Repetitive; 288 A
pulse width limited by TJM
VSD IF = IS, VGS = 0 V, Note 1 1.5 V
trr 250 ns
QRM 1.2 µC
IRM 8A
IF = 25A
-di/dt = 100 A/µs
VR = 100 V
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 264TM Outline
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2003 IXYS All rights reserved
IXFB 72N55Q2
Fig. 2. Extended Output Characteristics
@ 25 deg. C
0
20
40
60
80
100
120
140
160
180
0 2 4 6 8 101214161820
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
8V
5V
6V
7V
Fig. 3. Output Characteristics
@ 125 Deg. C
0
9
18
27
36
45
54
63
72
024681012
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
5V
6V
Fig. 1. Output Characteristics
@ 25 Deg. C
0
9
18
27
36
45
54
63
72
0123456
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
5V
6V
Fig. 4. R
DS(on)
Normalized to I
D25
V
alue vs.
Junction Temperature
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
D S (on)
- Normalize
d
I
D
= 72A
I
D
= 36A
V
GS
= 10V
Fig. 6. Drain Curre nt vs. Case
Temperature
0
10
20
30
40
50
60
70
80
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 5. R
DS(on)
Normalized to I
D25
Value vs. I
D
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
0 20 40 60 80 100 120 140 160 180
I
D
- Amperes
R
D S (on)
- Normalize
d
T
J
= 125ºC
T
J
= 25ºC
V
GS
= 10V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFB 72N55Q2
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Fig. 11. Capacitance
100
1000
10000
100000
0 5 10 15 20 25 30 35 40
V
D S
- Volts
Capacitance - pF
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 40 80 120 160 200 240 280
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= 275V
I
D
= 36A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
10
20
30
40
50
60
70
80
90
100
3.544.555.566.57
V
G S
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
-40ºC
Fig. 12. Maxim um Transient Therm al
Resistance
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
1 10 100 1000
Pulse Width - milliseconds
R
(th) J C
-
(ºC/W)
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
110
0 20 40 60 80 100 120 140 160
I
D
- Amperes
g
f s
- Siemens
T
J
= -40ºC
25ºC
125ºC
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
20
40
60
80
100
120
140
160
180
200
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
V
S D
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
