A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 °C
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
BVCEO IC = 50 mA 30 V
BVCES IC = 50 mA 60 V
BVEBO IE = 5.0 Ma 4.0 V
ICBO VCB = 30 V 5.0 mA
Cob VCB = 28 V f = 1.0 MHz 52 pF
hFE VCE = 5.0 V IC = 1.0 A 20 100 ---
Gpe
η
ηη
ηc VCE = 28 V Pout = 125 W f = 400 MHz
8.0
50 8.5
55 dB
%
NPN SILICON RF POWER TRANSISTOR
MRF392
DESCRIPTION:
The ASI MRF392 is a Common
Emitter Device Designed for Class A ,
AB and C Amplif ier Applications in the
300 - 500 MHz Military
Communications Band.
FEATURES INCLUDE:
• Gold Metalization
• Emitter Ballasting
• Input Matching
MAXIMUM RATINGS
IC 16 A
VCB 60 V
PDISS 270 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -55 °C to +200 °C
θ
θθ
θJC .65 °C/W
PACKAGE STYLE .400 8L FLG
MINIMUM
inc h es / mm
.115 / 2.92
.065 / 1.65
.380 / 9.65
B
C
D
E
F
G
A
MAXIMUM
.125 / 3.18
.390 / 9.91
.075 / 1.91
inc h e s / mm
H.645 / 16.38 .655 / 16.64
DIM
K
L
I
J
.895 / 22.73
.420 / 10.67
.120 / 3.05
.905 / 22.99
.430 / 10.92
.130 / 3.30
O
N
M
.395 / 10.03
.159 / 4.04
.405 / 10.29
.175 / 4.45
.003 / 0.08 .007 / 0.18
.280 / 7.11
.130 / 3.30
D
K
E
.125
F
G
.1925
J
I
H
N
LM
4 x .060 R
FULL R
A
B
C
O
.360 / 9.14
.030 / 0.76
.735 / 18.67 .765 / 19.43
1 1 2
2
2
2 3 3
1 = COLLECTOR 2 = EMITTER
3 = BASE
