RF01000, Rev. C (1/4/13) ©2013 Microsemi Corporation Page 1 of 7
MSMBG5.0A MXLSMBG170CAe3,
MSMBJ5.0A – MXLSMBJ170CAe3
Available
600 Watt Surface Mount
Transient Voltage Suppressor
Screening in
reference to
MIL-PRF-19500
available
DESCRIPTION
The MSMB 5.0AMSMB 170CA series of s ur face mo unt 600 watt transient voltage suppressors
p r ov ide a selection of standoff voltages (Vwm) from 5.0 to 170 V. T h ese hi gh-reliability devices are
available in either unidirectional or bidirectional versions. Th e S M B G Gull-wing design in the DO-
215AA packa ge i s idea l for visible solder connections. The SMBJ J-bend design in the DO -
214AA pack age all ows for greater PC board mounting dens ity. It is a vai lab l e wi th S nPb or
RoHS compliant matte-tin plating.
DO-215AA
Gull-win g Pac ka ge
DO-214AA
J-bend Package
NOTE: All SMB series are
equi valent t o p rior SMS package
identifications.
Also available in:
Commercial Grade
SMBJ5.0ASMBJ170CAe3
T-18
package
(axial-leaded)
P6KE6.8A P6KE200CAe3
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
High reliability devices with wafer fabrication and assembly lot traceability.
All devices 100% s urge tested.
Enhanced reliability screening in reference to MIL-PRF-19500 is also avail able.
Refer to High Reliability Up-Screened Plastic Products Portfolio for more details on the screening
options.
(See part nomenclature for all options.)
Moisture classification is Level 1 with no dry pack required per IPC/J EDEC J -STD-020B.
lot norm screening performed on standby current (ID).
RoHS compliant versions available.
APPLICAT IONS / BENE FITS
Protects sensitive components suc h as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.
Protection from switching transients & RF induced voltage pulses.
Protection from ESD and EF T per IE C 61000-4-2 and IEC 61000-4-4.
Secondary lightning protection per IEC61000-4-5 with 42 ohms source impedance:
Class 1: MSB 5.0A to MSMB 120CA
Class 2: MSMB 5.0A to MSMB 60CA
Class 3: MSMB 5.0A to MSMB 30CA
Class 4: MSMB 5.0A to MSMB 15CA
Secondary lightning protection per IEC61000-4-5 with 12 ohms source impedance:
Class 1: MSMB 5.0A to MSMB 36CA
Class 2: MSMB 5.0A to MSMB 18CA
MAXIMUM RATINGS @ 25 ºC unless otherwis e stated
MSCLawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSCIreland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Stor age Temperat ure TJ and
TSTG
-65 to +150
o
C
Thermal Resistance, Junction to Lead
RӨJL
25
oC/W
Thermal Resistance, Junction to Ambient (1)
RӨJA
90
oC/W
Peak Pulse Power Dissipation (2)
PPP
600
W
Rated Average Power Dissipation
(1)
@ TL < 25 ºC
PM(AV) 5
1.38
W
Tclamping (0 volts to V(BR)
min)
< 100
< 5
ps
ns
Forward Surge Current (3)
IFS
100
A (pk)
Solder Temperature @ 10 s
TSP
260
oC
Notes: 1. When mounted on F R4 PC board (1oz Cu ) with recommended footprint (see pad layout on last page).
2. With impulse repetition rate (duty factor) of 0.01 % or less (also Figure 1 and 4).
3. Peak impulse of 8.3 ms half-si ne wave ( uni di rectional only).
RF01000, Rev. C (1/4/13) ©2013 Microsemi Corporation Page 2 of 7
MSMBG5.0A MXLSMBG170CAe3,
MSMBJ5.0A – MXLSMBJ170CAe3
M ECHANICAL and PACK AGING
CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0 requirements.
TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating readily solderable per MIL- STD-750, method 2026.
MARKING: Part number.
POLARITY: Cathode end banded.
TAPE & REEL option: Standard per EIA-481-1-A (add “TR” suffix to part number). Consult factory for quantities.
WEIGHT: Approximately 0.1 grams.
See Package Dimensions on last page.
PART NOME NCL ATURE
M SM B G 5.0 C A e3
Reliability Level*
M
MA
MX
MXL
*(see High Reliability Up-
Screened P lastic Products
Portfolio)
Surface Mount Package
600 W Power Level
Lead Form
G = Gull-Wing
J = J-Bend
RoHS Compliance
e3 = RoHS Compl iant
Blank = non-RoHS Compliant
+/- 5% Tolerance Level
Polarity
C = bidirectional
Blank = unidirectional
Stand-Off Voltage (VWM)
(see Electrical Characteristics
table)
SYMBOL S & DEFI NITIONS
Symbol
Definition
VWM
Working Peak (Standoff) Voltage - The maximum peak vol tage that can be applied over the operating temperature
range. This is also referred to as standoff voltage.
P
PP
Peak Pulse Power - Rated random recurring peak impulse pow er dissipation.
V(
BR)
Breakdown Voltage - The minimum voltage the device will exhibit at a speci fied current.
I
D
Standby Current - The current at the rated standoff voltage (V
WM
).
I
PP
Peak Pulse Current - The peak current during the impulse.
VC
Clamping Voltage - Clamping voltage at I
PP
(peak pulse current) at the specified pulse conditions (typically shown as
maximum value).
IBR Breakdown Current – The current used for measuring breakdown voltage V(
BR)
.
RF01000, Rev. C (1/4/13) ©2013 Microsemi Corporation Page 3 of 7
MSMBG5.0A MXLSMBG170CAe3,
MSMBJ5.0A – MXLSMBJ170CAe3
ELECTRICAL CHARACTERISTICS @ 25 ºC
PART NUMBER
REVERSE
STAND-OFF
VOLTAGE
VWM
BREAKDO WN VOLTAGE
V(BR) @
I(BR)
MAXIMUM
CLAMPING
VOLTAGE
VC @ IPP
PEAK PULSE
CURRENT
(see Fig. 2)
IPP
MAXIMUM
STANDBY
CURRENT
ID @ VWM
Gull-Wing
J-Bend
V
V
mA
V
A
µA
MSMBG5.0A
MSMBJ5.0A
5
6.40 7.00
10
9.2
65.2
800
MSMBG6.0A
MSMBJ6.0A
6
6.67 7.37
10
10.3
58.3
800
MSMBG6.5A
MSMBJ6.5A
6.5
7.22 7.98
10
11.2
53.6
500
MSMBG7.0A
MSMBJ7.0A
7
7.78 8.60
10
12
50
200
MSMBG7.5A
MSMBJ7.5A
7.5
8.33 9.21
1
12.9
46.5
100
MSMBG8.0A
MSMBJ8.0A
8
8.89 9.83
1
13.6
44.1
50
MSMBG8.5A
MSMBJ8.5A
8.5
9.44 10.4
1
14.4
41.7
10
MSMBG9.0A
MSMBJ9.0A
9
10.0 11.1
1
15.4
39
5
MSMBG10A
MSMBJ10A
10
11.1 12.3
1
17
35.3
5
MSMBG11A
MSMBJ11A
11
12.2 13.5
1
18.2
33
5
MSMBG12A
MSMBJ12A
12
13.3 14.7
1
19.9
30.2
5
MSMBG13A
MSMBJ13A
13
14.4 15.9
1
21.5
27.9
1
MSMBG14A
MSMBJ14A
14
15.6 17.2
1
23.2
25.8
1
MSMBG15A
MSMBJ15A
15
16.7 18.5
1
24.4
24
1
MSMBG16A
MSMBJ16A
16
17.8 19.7
1
26
23.1
1
MSMBG17A
MSMBJ17A
17
18.9 20.9
1
27.6
21.7
1
MSMBG18A
MSMBJ18A
18
20.0 22.1
1
29.2
20.5
1
MSMBG20A
MSMBJ20A
20
22.2 24.5
1
32.4
18.5
1
MSMBG22A
MSMBJ22A
22
24.4 26.9
1
35.5
16.9
1
MSMBG24A
MSMBJ24A
24
26.7 29.5
1
38.9
15.4
1
MSMBG26A
MSMBJ26A
26
28.9 31.9
1
42.1
14.2
1
MSMBG28A
MSMBJ28A
28
31.1 34.4
1
45.4
13.2
1
MSMBG30A
MSMBJ30A
30
33.3 36.8
1
48.4
12.4
1
MSMBG33A
MSMBJ33A
33
36.7 40.6
1
53.3
11.3
1
MSMBG36A
MSMBJ36A
36
40.0 44.2
1
58.1
10.3
1
MSMBG40A
MSMBJ40A
40
44.4 49.1
1
64.5
9.3
1
MSMBG43A
MSMBJ43A
43
47.8 52.8
1
69.4
8.6
1
MSMBG45A
MSMBJ45A
45
50.0 55.3
1
72.7
8.3
1
MSMBG48A
MSMBJ48A
48
53.3 58.9
1
77.4
7.7
1
MSMBG51A
MSMBJ51A
51
56.7 62.7
1
82.4
7.3
1
MSMBG54A
MSMBJ54A
54
60.0 66.3
1
87.1
6.9
1
MSMBG58A
MSMBJ58A
58
64.4 71.2
1
93.6
6.4
1
MSMBG60A
MSMBJ60A
60
66.7 73.7
1
96.8
6.2
1
MSMBG64A
MSMBJ64A
64
71.1 78.6
1
103
5.8
1
MSMBG70A
MSMBJ70A
70
77.8 86.0
1
113
5.3
1
MSMBG75A
MSMBJ75A
75
83.3 92.1
1
121
4.9
1
MSMBG78A
MSMBJ78A
78
86.7 95.8
1
126
4.7
1
MSMBG85A
MSMBJ85A
85
94.4 104
1
137
4.4
1
MSMBG90A
MSMBJ90A
90
100 111
1
146
4.1
1
MSMBG100A
MSMBJ100A
100
111 123
1
162
3.7
1
MSMBG110A
MSMBJ110A
110
122 135
1
177
3.4
1
MSMBG120A
MSMBJ120A
120
133 147
1
193
3.1
1
MSMBG130A
MSMBJ130A
130
144 159
1
209
2.9
1
MSMBG150A
MSMBJ150A
150
167 185
1
243
2.5
1
MSMBG160A
MSMBJ160A
160
178 197
1
259
2.3
1
MSMBG170A
MSMBJ170A
170
189 209
1
275
2.2
1
RF01000, Rev. C (1/4/13) ©2013 Microsemi Corporation Page 4 of 7
MSMBG5.0A MXLSMBG170CAe3,
MSMBJ5.0A – MXLSMBJ170CAe3
GRAPHS
twPulse Width µ s
FIGURE 1
P eak P ulse Power vs Pulse Time
t Time ms
Test waveform parameters: tr = 10 µs, tp=1 000µs
FIGURE 2
Pulse Waveform for 10/1000 Exponential Surge
Pulse Current in Percent of I
PP
P
PP
- Peak Pulse Power - kW
RF01000, Rev. C (1/4/13) ©2013 Microsemi Corporation Page 5 of 7
MSMBG5.0A MXLSMBG170CAe3,
MSMBJ5.0A – MXLSMBJ170CAe3
GRAPHS (continued)
TL Lead Temper ature °C
FIGURE 3
Derating Curve
V(BR) - Br eakdown Vol tage - Volts
FI GURE 4
Typical Capacit anc e vs. Br eakd own Voltage
NOTE: Bidi rectional capacitance is half that shown at zero volts.
Peak Pulse Power (P
PP
) or continuous
Power in Percent of 25°C Ra ting
C Capacitance - Picofarads
RF01000, Rev. C (1/4/13) ©2013 Microsemi Corporation Page 6 of 7
MSMBG5.0A MXLSMBG170CAe3,
MSMBJ5.0A – MXLSMBJ170CAe3
PACKAGE DIM ENSIONS
Se e pa d l ayou t on ne x t pag e .
Dimensions
Ltr
Inch
Millimeters
Min
Max
Min
Max
A
.077
.083
1.96
2.10
B
.160
.180
4.06
4.57
C
.130
.155
3.30
3.94
E
.077
.104
1.95
2.65
F
.235
.255
5.97
6.48
K
.015
.030
.381
.762
Dimensions
Ltr
Inch
Millimeters
Min
Max
Min
Max
A
.077
.083
1.96
2.10
B
.160
.180
4.06
4.57
C
.130
.155
3.30
3.94
D
.205
.220
5.21
5.59
E
.077
.104
1.95
2.65
L
.030
.060
.760
1.52
SMBG (DO-215AA)
SMBJ (DO-214AA)
RF01000, Rev. C (1/4/13) ©2013 Microsemi Corporation Page 7 of 7
MSMBG5.0A MXLSMBG170CAe3,
MSMBJ5.0A – MXLSMBJ170CAe3
PAD LAYOUT
SMBG (DO-215AA)
Ltr
Inch
Millimeters
A
0.320
8.13
B
0.085
2.16
C
0.110
2.79
SMBJ (DO-214AA)
Ltr
Inch
Millimeters
A
0.260
6.60
B
0.085
2.16
C
0.110
2.79