Rugged Power MOSFETs IRFP240R, IRFP241R IRFP242R, IRFP243R Avalanche Energy Rated N-Channel Power MOSFETs 16A and 18A, 200V, 150V ros(on) = 0.182 and 0.220 Features: M Single pulse avalanche energy rated @ SOA is power-dissipation limited @ Nanosecond switching speeds lf Linear transfer characteristics @ High input impedance The IRFP240R, IRFP241R, IRFP242R and IRFP243R are advanced power MOSFETs designed, tested, and guaran- teed to withstand a specified level of energy in the break- down avalanche mode of operation. These are n-channel enhancement-mode silicon-gate power field-effect transis- tors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and driv- ers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. The IRFP-types are supplied in the JEDEC TO-247 plastic package. Absolute Maximum Ratings File Number 2087 N-CHANNEL ENHANCEMENT MODE 9208-42658 TERMINAL DIAGRAM TERMINAL DESIGNATION y SOURCE CJ DRAIN ws || O 4 fl ;} > TOP VIEW GATE JEDEC TO-247 Par t IRFP240R | IRFP241R | IRFP242R | IRFP243R Units Vos Drain - Source Voltage 200 150 200 150 Vv Vosr Drain - Gate Voltage (Ras = 20 KQ) @ 200 150 200 150 Vv Ip @ Te = 25C Continuous Drain Current 18 18 16 16 A lb @ Tc = 100C Continuous Drain Current 11 cf 10 10 A lom Pulsed Drain Current @ 72 72 64 64 A Ves Gate - Source Voltage +20 Vv Po @ Tc = 25C Max. Power Dissipation 125 (See Fig. 14) Ww | Linear Derating Factor 1.0 (See Fig. 14) Ww??C Eas Single Pulse Avalanche Energy Rating 510 mj The Soe pe tiue ange 55 0 160 c Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C 6-274Rugged Power MOSFETs Electrical Characteristics @ Tc = 25C (Unless Otherwise Specified) IRFP240R, IRFP241R IRFP242R, IRFP243R Turn-on speed is substantially controlled by Ls + Lo. P Type Min. Typ. Max. Units Test Conditions BVoss Drain - Source Breakdown Voltage IRFP240R _ IRFP242R | 29 | | V__ | Ves=0Vv IRFP241R _ IRFP243R 150 _ _ lo = 250uA Vesun Gate Threshold Voltage ALL 2.0 _ 4.0 Vos = Ves, ln = 2500 A less Gate-Source Leakage Forward ALL - _ 100 nA Ves = 20V less Gate-Source Leakage Reverse ALL _ _ -100 nA Ves = -20V : toss Zero Gate Voltage Drain Current _ _ 250 BA Vos = Max. Rating, Ves = 0' ALL _{ [1000 | wa _[ Vos = Max. Rating x 0.8, Ves = OV, Te = 125C loin On-State Drain Current @ IRFP240R | ag _ _ A iRFP241R Vos > Into X Rosion max, Ves = 10V IRFP242R | 4, 7 _ A IRFP243R Rosin Static Drain-Source On-State IRFP240R _ 0.14 0.18 Q Resistance @ IRFP241R . . _ = TREPDAR Ves = 10V, In = 10A iRFP243R | | O20 | 022 | 2 Qts Forward Transconductance @ ALL 6.0 9.0 =- S()_ | Vos > lotow * Rostonimax, Ip = 10A Cies Input Capacitance ALL _ 1275 _ pF Vas = OV, Vos = 25V, f= 1.0 MHz Coos Output Capacitance ALL = 500 _ pe See Fig. 10 Cres Reverse Transfer Capacitance ALL _ 160 _ pF : tation Turn-On Delay Time ALL _ 16 30 ns Voo = 75V, Ip = 10A, 20 = 4.70 t Rise Time ALL = 27 60 ns See Fig. 17 tacotn Turn-Off Delay Time ALL ~~ 40 80 ns (MOSFET switching times are essentially t Fall Time ALL _ 31 60 ns independent of operating temperature.) Qe Total Gate Charge ALL _ 43 60 nc Ves = 10V, Ib = 22A, Vos = 0.8 Max. Rating. (Gate-Source Plus Gate-Drain)} See Fig. 18 for test circuit. (Gate charge is Qe Gate-Source Charge ALL 16 _ nc essentially independent of operating ath At temperature.) Qoa Gate-Drain (Miller) Charge ALL = 27 _ nc Lo Internal Drain Inductance ALL - 5.0 - nH Measured between Modified MOSFET the contact screw on symbol showing the header that is closer to internal device source and gate pins inductances and center of die. Lo Ls Internal Source Inductance ALL - 12.5 _ nH Measured from the source pin, 6 mm col Ls. {0.25 in.) from header and source s bonding pad. azcy anaes Thermal Resistance ReJC _ Junction-to-Case ALL = = 1.0 CW ReCS Case-to-Sink ALL _ 0.1 _ C/W_| Mounting surface flat, smooth, and greased. ReJA Junction-to-Ambient ALL _ => 30 C/W | Free Air Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current IRFP240R _ _ 18 A Modified MOSFET symbol D (Body Diode) IRFP241R showing the integral IRFP242R A reverse P-N junction rectifier. wnepoasn | | | '6 6 ol Ise Pulse Source Current IRFP240R _ _ 72 (Body Diode) @ IRFP241R ener aes IRFP242R inep2a3R | ~ | | & | A Vsp Diode Forward Voltage @ IRFP240R _ = _ IRFP241R - _ 20 Vv Te = 28C, ls = 18A, Ves = OV (RFP242R = = = IRFP243R _ _ 19 Vv Tc = 25C, Is = 16A, Ves = OV te Reverse Recovery Time ALL = 650 = ns Ts = 150C, Ir = 18A, dip/dt = 100A/ps Qaa Reverse Recovered Charge ALL = 41 HC Ta = 180C, le = 18A, dle/dt = tO0A/ps ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible. @ Ty = 25C to 150C. @ Pulse Test: Pulse width <= 300us, Duty Cycle = 2%. Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermal Impedance Curve (Fig. 5). @ Von = 50V, starting Ts = 25C, L = 1.9 mH, Ags = 500, Ipeak = 20A. See figures 15, 16. 6-275Rugged Power MOSFETs IRFP240R, IRFP242R, Zynaclt Regge, NOAMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE (PER UNIT) 6-276 IRFP241R IRFP243R 10 at PULSE a = = @ : x z z z E = 2 us PULSE TEST = ' ' 1 o 3 Vos > 'pian) * z z = = 5 & 3 3 9 10 20 zl 40 be] 0 2 4 6 8 10 Vos, OAAIN-TO-SOURCE VOLTAGE (VOLTS) Vas. GATE-TO-SGURCE VOLTAGE (VOLTS) Fig. 1 - Typical output characteristics. Fig. 2 - Typical transfer characteristics. 100 50 | IRFF242A, us PULSE TEST 20 a a 2 2 = = 3 : < =< & Sos = = & < 2 < s S 2 3 3 z z < = 10 5 5 s 2 Te = 26C 9.5 [ Ty = 190C Max Ric 10 Cw te 02 SINGLE PULSE IRFP241R, 3A IRFP240A, 2A 01 . 0 1 2 3 4 s 10 2 5 10 20 50 100-200 500 Vos. DAAIN-TO-SOURCE VOLTAGE (VOLTS) Vos. ORAIN-TO SOURCE VOLTAGE (VOLTST Fig. 3 - Typical saturation characteristics. Fig. 4 - Maximum Safe operating area. ~ s in 2 x 0.05 SINGLE PULSE (TRANSIENT 1 2 IMPEGANCE] QUTY FACTOR, DO 9 0.02 2 PER UNIT BASE = Rinse = 10 DEG CW 3. Ty - To = Pom 2Zensclt ost ws = 2 5 wt 2 5 wd 2 5 we 2 5 wt 2 5 19 2 5 0 ty, SQUARE WAVE PULSE DURATION (SECONOS) Fig. - Maximum effective transient thermal impedance, junction-to-case vs. pulse duration.Rugged Power MOSFETs IRFP240R, IRFP241R IRFP242R, IRFP243R 19.0 50 a ne Ty = -550C ws 3 a 6 wn Qty, FRANSCONDUCTANCE (SIEMENS) a 2 = ign. REVERSE DRAIN CURRENT (AMPERES) 00 ys PULSE TEST Vos > 'Dton} * Roston) max 0 8 16 u 2 40 0 04 08 12 16 20 tp, DRAIN CUAAENT (AMPERES) Vsp, SOURCE TO DRAIN VOLTAGE (VOLTS) Fig. 6 - Typical transconductance vs. drain current. Fig. 7 - Typical source-drain diode forward voltage. 125 1.15 ~ o 8 (NORMALIZED) a 2 o a 2 085 8V oss, ORAIN-TO- SOURCE BREAKDOWN VOLTAGE {NORMALIZEO} 2 ow Rostony. DAAIN-TO-SOURCE ON-STATE RESISTANCE 0.75 0 -40 0 40 80 120 160 40 0 40 80 120 160 Ty, JUNCTION TEMPERATURE (OC) Ty, JUNCTION TEMPERATURE (9C} Fig. 8 - Breakdown voltage vs. temperature. Fig. 9 - Normalized on-resistance vs. temperature. 2000 Cys = Cg + Cag, Cys SHORTED Cr = Cog _Vgg = OV Coe Cog f= UMHr Coss = Cas + Tat Cpa =Cayt Vos = s 3 Ss ' 1 Vos = Wov. ' \ Vos = 160V, IRFP240R, 242A. C, CAPACITANCE (pF) Ip = 228 FOR TEST CIRCUIT SEE FIGURE 18 Vas. GATE TO SOURCE VOLTAGE (VOLTS) 0 $ 10 18 20 25 30 36 40 45 $0 0 20 40 60 40 Vos. ORAIN-TO-SOUACE VOLTAGE (VOLTS) Og TOTAL GATE CHAAGE (nC) Fig. 10 - Typical capacitance vs. drain-to-source voltage. Fig. 11 - Typical gate charge vs. gate-to-source voltage. 6-277Rugged Power MOSFETs IRFP240R, IRFP241R IRFP242R, IRFP243R Rosion). ORAIN TO SOURCE ON RESISTANCE (GHMS) Aigsion) MEASURED WITH CURRENT PULSE OF 20 us DURATION INITIAL Ty = 25C (HEATING EFFECT OF 2 0 ys PULSE IS MINIMAL} a 20 40 60 Ip. DRAIN CURRENT (AMPERES) Fi a Pg. POWER DISSIPATION (WATTS? Qo 20 40 60 a0 100 120 140 Te. CASE TEMPERATURE (C) Fig. 14 - Power vs. temperature derating curve. ADJUST A, TO O8TAIN asa SPECIFIED Iq i 472 | SOURCE J | 1MPE DANCE Fig. 17 - Switching time test circuit. 6-278 . 12 - Typical on-resistance vs. drain current. a IRFP240R, 241A. a tp. DRAIN CURRENT (AMPERES) 25 50 15 100 125 150 Tc, CASE TEMPERATURE (C) Fig. 13 - Maximum drain current vs. case temperature. VARY 1p TO OBTAIN REQUIRED PEAK I 92C$- 42659 Fig. 15 - Unclamped energy test circuit. 92CS- 42660 Fig. 16 - Unclamped energy waveforms. Vos (SOLATED SUPPLY? CURRENT REGULATOR _i SAME TYPE av T BATTERY a | -Yos CURRENT = CURRENT SHUNT SHUNT Fig. 18 - Gate charge test circuit.