1.9
0.950.95
2.9
0.4
1. 3
2. 4
1.0
@vic SOT-23 Plastic-Encapsulate Transistors
MMBT4401LT1 TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM: 0.3 W (Tamb=25℃)
Collector current
ICM: 0.6 A
Collector-base voltage
V(BR)CBO: 60 V
Operating and storage junction temperature range
TJ, T stg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown vol tage V(BR)CBO Ic=100µA , IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO I
C= 1mA , IB=0 40 V
E mitter-b ase break dow n vol t age V(BR)EBO I
E=100µA, IC=0 6 V
Collector cut-off current ICBO V
CB=50V, IE=0 0.1 µA
Collector cut-off current ICEO V
CE=35V, IB=0 0.1 µA
E mitte r cut-off current IEBO V
EB=5V, IC=0 0.1 µA
HFE(1) VCE=1V, IC= 150mA 100 300
DC current gain HFE(2) VCE=2V, IC= 50 0mA 40
Collector-emitter saturat i on voltage VCE(sat) I
C=150 mA, IB=15mA 0.4 V
Base-emitter satu ration voltage VBE(sat) I
C= 150 mA, IB=15mA 0.95 V
Transition fre quency f T VCE= 10V, IC= 20m A
f = 100MHz 250 MHz
DEVICE MARKING :MMBT44 01LT1=2X
Unit: mm
SOT-23
1. BASE
2. E MITTER
3. COLLECTOR
