@vic SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4401LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 0.3 W (Tamb=25) PCM: Collector current 0.6 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range 0. 95 0. 4 0. 95 2. 9 1. 9 2. 4 1. 3 TJ, Tstg: -55 to +150 Unit: mm ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter unless otherwise specified) Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100A , IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 6 V Collector cut-off current ICBO VCB=50V, IE=0 0.1 A Collector cut-off current ICEO VCE=35V, IB=0 0.1 A Emitter cut-off current IEBO VEB=5V, IC=0 0.1 A HFE(1) VCE=1V, IC= 150mA 100 HFE(2) VCE=2V, IC= 500mA 40 Collector-emitter saturation voltage VCE(sat) IC=150 mA, IB=15mA 0.4 V Base-emitter saturation voltage VBE(sat) IC= 150 mA, IB=15mA 0.95 V 300 DC current gain fT Transition frequency DEVICE MARKING :MMBT4401LT1=2X VCE= 10V, IC= 20mA f = 100MHz 250 MHz