C Equivalent circuit 2SD2401 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1570) Electrical Characteristics Unit VCBO 160 V ICBO VCB=160V 100max A VCEO 150 V IEBO VEB=5V 100max A V Ratings Unit VEBO 5 V V(BR)CEO IC=30mA 150min IC 12 A hFE VCE=4V, IC=7A 5000min IB 1 A VCE(sat) IC=7A, IB=7mA 2.5max V IC=7A, IB=7mA 3.0max V 24.40.2 150(Tc=25C) W VBE(sat) Tj 150 C fT VCE=12V, IE=-2A 55typ MHz -55 to +150 C COB VCB=10V, f=1MHz 95typ pF 9 a b 2 3 hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.450.1 RL () IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (s) tstg (s) tf (s) 70 10 7 10 -5 7 -7 0.5typ 10.0typ 1.1typ 0 0 2 4 0 6 0.2 0.5 1 5 10 50 (V C E =4V) Typ 10000 5000 125C 10000 25C 5000 -30C Transient Thermal Resistance DC Cur rent Gain h F E 70000 50000 1000 5 600 0.2 10 12 0.5 Collector Current I C (A) ) mp) emp e Te Cas 2 2.6 1 5 10 12 2 1 0.5 0.1 1 5 10 50 100 500 1000 2000 Time t(ms) Collector Current I C (A) f T - I E Characteristics (Typical) se T 1 j-a - t Characteristics h FE - I C Temperature Characteristics (Typical) 40000 Safe Operating Area (Single Pulse) P c - T a Derating (V C E =12V) 30 80 10 160 s ite he 80 at si nk Without Heatsink Natural Cooling 20 fin 0.5 In 1 120 ith Maximu m Power Dissipa tion P C (W) 0m W 40 DC s Typ 60 10 5 m Collector Curr ent I C (A) 10 100 Cu t-of f Fr eque ncy f T (MH Z ) DC Cur rent Gain h F E 0 Base-Emittor Voltage V B E (V) (V C E =4V) 1 0 100 200 Base Current I B (mA) h FE - I C Characteristics (Typical) 0.5 p) 2 Collector-Emitter Voltage V C E (V) 1000 02 4 C ( 2 I C =5A 1 6 -30 I B =0.4mA I C =7A Tem 0.6mA 4 I C =10A (Ca 0.8mA 8 se 6 2 25C 1.0 mA (Ca 1.2m A 8 10 C 1.5 mA j- a ( C/W) Collector Current I C (A) A (V C E =4V) 12 125 2 .0 m 10 E I C - V BE Temperature Characteristics (Typical) 3 Collector Current I C (A) mA C Weight : Approx 18.4g a. Part No. b. Lot No. V CE ( sat ) - I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) A 10m 2.5 3.0 +0.3 -0.1 5.450.1 B VCC (V) I C - V CE Characteristics (Typical) 0.65 +0.2 -0.1 1.05 +0.2 -0.1 Typical Switching Characteristics (Common Emitter) 12 2.1 2-o3.20.1 PC Tstg 6.00.2 36.40.3 7 Conditions 21.40.3 Symbol E External Dimensions MT-200 (Ta=25C) Ratings Symbol 4.0max Absolute maximum ratings (Ta=25C) (7 0 ) Application : Audio, Series Regulator and General Purpose 20.0min Darlington B 40 0.1 0 -0.02 -0.1 -1 Emitter Current I E (A) -10 0.05 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 150 200 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(C) 151