SCRs 2N5060-2N5064 8 Amp RMS, Plastic FEATURES DESCRIPTION Voltage Ratings: to 200V This plastic series features very fast switching performance, low forward voltage Forward Current: 0.84 RMS drop and a high degree of reliability and parameter stability. All units are fully planar Surge Current: 6A, 8ms passivated and are packaged in a rugged TO-92 case, constructed from a special Gate Sensitivity: 200.a max. epoxy compound that features excellent moisture resistance providing stable per- @ Planar Passivated Process formance under high humidity conditions and good thermal transfer characteristics. TO-92 Plastic Package TYPICAL APPLICATIONS Lamp Driving Process Controls Remote Controls Relay Driving Pressure Controls High Current SCR Driving Relay Replacement Display Systems Timers Alarm Systems Touch Switches Temperature Controls Counters and many other current sensing and contro! applications. ABSOLUTE MAXIMUM RATINGS 2NS5060 2N5063 2N5064 wee WO 150V.. Repetitive Peak Off-State Voltage, Voay -- Repetitive Peak Reverse Voltage, Very - On-State Current, bryan) cece eeeettssesseeeee Peak One Cycle Surge (Non-Rep.) On-State Current, lis, - Peak Gate Current, Ic, Peak Gate Power, Poy ....... Average Gate Power Peay Reverse Gate Voltage, Veg ... Storage Temperature Range ... . . Operating Temperature Range oo... ee tne rei tiniest caste . 65C to +150C. 65C to +125C MECHANICAL SPECIFICATIONS 2N5060-2N5064 TO-92 (LH 539 ae UNITRODE 2N5060-2N5064 ELECTRICAL SPECIFICATIONS (at 25C unless noted Test Symbol Min. Typical Max. Units Test Conditions _ 01 10 BA Voam = Rating Rey = 1K2 Off-State Current tora _ _ 50 uA Vor == Rating, T = 125C _ 0.1 1.0 pA Verm == Rating Re, = 1K2 Reverse Current Trem _ ~ 50 uA Verm = Rating, T = 125C . - _ 200 BA Vp =7V, R, = 100 ohms Res = 10K2 Gate Trigger Current ler | | 35 | uA | v,7V,R, = 100 ohms, T 65C _ 0.6 0.8 Vv Vp = 7V, R, = 100 ohms Re, = 10K2 Gate Trigger Voltage Ver - ~~ 1.2 Vv Vp = 7V, R, = 100 ohms, T = 65C 0.1 Vv | V, = Rating, R, = 100 ohms, T = 125C Peak On-State Voltage Vim _ 1.2 L7 V ly, = 1 Amp Pulse . 07 5.0 mA | V,=/7V,T = 25C Holding Current hn | | 100 | mA | v,=7V,T=65C Critical Rate of Rise Off-State Voltage dv/dt _ % _ Vius | Vp = Rated Turn-on Time ton _ 0.1 Ks le = 10mA, |, = 1A, Vp = 20V Circuit Commutated Turn-off Time t, _ 8 _ us L=Ikp= 1A Note: Blocking voltage ratings apply over the full operating temperature range, provided the gate is connected to the cathode through a re- sistor, 1000 ohms or smaller, or other adequate bias is used. DESIGN CONSIDERATIONS 1. The 2N5060 Series SCRs are guaranteed to block their rated voltage over the rated operating temperature when a resistance of 1000 ohms or less is connected from gate to cathode as shown. ANODE GATE Re, = 1K or less CATHODE 2. In cases where the SCR may be subjected to fast rising anode voltages a capacitor can be connected between anode or gate and cathode as shown, to serve as protection against dv/dt firing. ANODE ANODE GATE 7 Sax GATE Co, 7 CATHODE CATHODE UNITRODE CORPORATION + 5 FORBES ROAD LEXINGTON, MA 02173 TEL. (617) 861-6540 TWX (710) 326-6509 + TELEX 95-1064 540 PRINTED IN U.S.A. 2N5060-2N5064 Gate Trigger Current vs. Junction Temp. Gate Trigger Voltage vs. Junction Temp. > a4 = > & 3 w 5 aq l2 rv) 5 x x oO 2 2 > 2 e ti wi & oO 1 z 8 : ua F tu = Ww = 6 = z 0 ~ 6 q Rated Vi. Sp Vv, = 6V 4 2 4 S a. a a ! z > - log | 32 > Qo 65. 25. 0 25 50 75 00 125 150 65 25 0 2 50 75 . 100 125 150 T, JUNCTION TEMP. (C) T, JUNCTION TEMP. (C} Holding Current vs. Junction Temp. dv/dt vs. Junction Temp. 1000 uw Vp = Rated V; = Q 500 = im Ls 5 ws 200 wi Ee Fe & W 100 3 z& 9g Oa 50 2 ES a id 5 oe 20 oO ac = $5 2. zu 10 3 z=6 is 3 F ~o | a a. 3 2 ' 25 75 1 6 25 0 25 50 75 100 125 150 5 r 9 junetion TEMP co) 125 150 T, JUNCTION TEMP. (C) a Gate Pulse For Turn-On Forward Blocking Recovery Time vs. Pulse Gate Current vs. Junction Temp. Ww 1.1, = 1A, V, = Rated Von, g 100 a : = 2. T, = 28C wy z A w 50 ie 4 e b aa <= tt 20 sae! on 9 4p SF Zz > ZO : 5 5 2 2g wl =P, = 2 So =) ax Ss ze. = 1 8 z a) > o & 2 E , a 01.02 05 1 2 #5 1 2 #5 10 20 w | 65 25 0 25 50 75 100 125 150 I, ~ PULSE GATE CURRENT (mA) T, JUNCTION TEMP. (C) UNITRODE CORPORATION + 5 FORBES ROAD LEXINGTON, MA 02173 + TEL. (617) 861-6549 TWX (710) 326-6509 + TELEX 95-1064 541 PRINTED IN U.S.A. 2N5060-2N5064 Current vs. On-State Voltage Current vs. Power Dissipation 1 (Junction Temperature = 125C pe_+ z 180 ar) 120 Zz _{ A 90 = u Conduction i 60 = & a fe) angie i 39 2 a 0 Conduction c E angle =< 5 eo 3 5 Cy uw z < S os i" EF w wo Q 2 <= oi | 2 .02 7 2 OL .005 1 2 5 1-2 5 10 20 01.02 0 1 2 5 1 2 V, TYPICAL ON-STATE VOLTAGE (V) W MAXIMUM ON-STATE POWER DISSIPATION (W) Current vs. Ambient Temp. Current vs. Case Temp. 1.4 Unit mounted with Case Temperature measured at < vertical in free air. = center of flat side of device body. bt 7 p l2 z 2 Ww td 5 5 3 @ angie & w Ww 3 z Es FE FE 9 9 z4 z Oo 6 3 lu <= 3 g ir 4 wl Ww z 2 z | | 2 gd = oo 50 7 (OL 5 0. 25 50 75 100 125 150 25 co 6-125 150 T, ma, MAX. AMBIENT TEMPERATURE (C) To mae MAX. CASE TEMPERATURE (C) Current vs. Heatsink Temp. = Surge Rating vs. Pulse Duration 5 500 Moy Unit mounted in center of w Surge Pulse is half sin e _ 1x1" x 1,6 aluminum heat- & ge Pulse is half sine wave. Zio sink using epoxy adhesive. Unit 3 200 5 mounted flat side against heatsink. Ww T, =65C to +125C Ww 2. Heatsink temperature E 100 a 1 /-~ measured 1/," from unit-/ 5 2 z 50 Puise wu pc + i gurat 8 Conduction 20 = angle ui a a z wW 49 [CONDUCTION ANGLEN= 180" = < 120 \ fi 5 g RN E 2 r 2 > z | 2 30 SA 2 Ss 1 ~ 9 Zz 5 0 25 50 75 100 125 150 _ lus lus 10us 10048 lms 10ms_ 100ms MAXIMUM HEATSINK TEMPERATURE (C) PULSE DURATION UNITRODE CORPORATION + 5 FORBES ROAD LEXINGTON, MA 02173 + TEL. (617) 861-6540 TWX (710) 326-6509 TELEX 95-1064 542 PRINTED IN U.S.A.