©2000 Fairchild Semiconductor International Rev. A, February 2000
BC636/638/640
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCER Collector-Emitter Voltage at RBE=1KΩ
: BC63 6
: BC63 8
: BC64 0
-45
-60
-100
V
V
V
VCES Collector-Emitter Voltage
: BC63 6
: BC63 8
: BC64 0
-45
-60
-100
V
V
V
VCEO Collector-Emitter Voltage
: BC63 6
: BC63 8
: BC640
-45
-60
-80
V
V
V
VEBO Emitter-Base Voltage -5 V
ICCollector Current -1 A
ICP Peak Collector Current -1.5 A
IBBase Current -100 mA
PCCollector Dissipation 1 W
TJJunction Temperature 150 °C
TSTG Storage Temperature -65 ~ 150 °C
Symbol Param e ter Test Condit ion Min. Typ. Max. Units
BVCEO Collect or-E mitter Break down Voltage
: BC636
: BC638
: BC640
IC= -10mA, IB=0 -45
-60
-80
V
V
V
ICBO Collector Cut-off Current VCB= -30V, IE=0 -0.1 µA
IEBO Emitter Cut-off Current VEB= -5V, IC=0 -0.1 µA
hFE1
hFE2
hFE3
DC Current Gain : All
: BC636
: BC638/BC640
: All
VCE= -2V, IC= -5mA
VCE= -2V, IC= -150mA
VCE= -2V, IC= -500mA
25
40
40
25
250
160
VCE (sat) Collector-Emitter Saturat ion Voltage IC= -500mA, IB= -50mA -0.5 V
VBE (on) Base-Emitter On Voltage VCE= -2V, IC= -500mA -1 V
fTCurrent Gain Bandwidth Product VCE= -5V, IC= -10mA,
f=50MHz 100 MHz
BC636/638/640
Switching and Amplifier Applications
• Complement to BC635/637/639
1. Emitter 2. Collector 3. Base
TO-92
1
©2000 Fairchild Semiconductor International Rev. A, February 2000
BC636/638/640
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Vo ltage
Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
Figure 5. Collector Output Capacitance
-0 -10 -20 -30 -40 -50
-0
-100
-200
-300
-400
-500
IB = - 0.2 mA
IB = - 0.4 mA
IB = - 0.6 mA
IB = - 0.8 mA
IB = - 1.0 mA
IB = - 1.2 mA
IB = - 1.4 mA
IB = - 1.6 mA
IB = - 1.8 mA
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-1 -10 -100 -1000
10
100
1000
VCE = - 2V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-1 -10 -100 -1000
-0.01
-0.1
-1
-10
IC = 10 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
-1
-10
-100
-1000
VCE = - 2V
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
-1 -10 -100
1
10
100
f=1MHz
Cob[pF], CAP AC ITANC E
VCB[V], COLLECTOR-BASE VOLTAGE
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
BC636/638/640
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. E
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
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