2N5060 THRU 2N5064
SILICON CONTROLLED RECTIFIERS
0.8 AMP, 30 THRU 200 VOLT The CENTRAL SEMICONDUCTOR 2N5060 series
devices are epoxy molded SCRs designed for control
systems and sensing circuit applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL 2N5060 2N5061 2N5062 2N5063 2N5064 UNITS
Peak Repetitive Off-State Voltage VDRM, VRRM 30 60 100 150 200 V
RMS On-State Current (Note 1; TC=80°C) IT(RMS) 0.8 A
Average On-State Current (Note 1; TC=67°C) IT(AV) 0.51 A
Average On-State Current (Note 1; TC=102°C) IT(AV) 0.255 A
Peak One Cycle Surge Current (60Hz) ITSM 10 A
I2t Value for Fusing (t=8.3ms) I2t 0.4 A2s
Peak Forward Gate Power (tp<1.0s) PGM 0.1 W
Average Forward Gate Power (t=8.3ms) PG(AV) 0.01 W
Peak Forward Gate Current (tp<1.0s) IGM 1.0 A
Peak Reverse Gate Voltage (tp<1.0s) VRGM 5.0 V
Operating Junction Temperature TJ -40 to +125 °C
Storage Temperature Tstg -40 to +150 °C
Thermal Resistance (Note 2) ΘJC 75 °C/W
Thermal Resistance ΘJA 200 °C/W
Notes: 1) 180° Conduction Angles
2) Measured with the “flat side down” on a heatsink and held in position by a metal clamp over the curved surface.
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IDRM, IRRM V
D=Rated VDRM, RGK=1.0kΩ 10 A
IDRM, IRRM V
D=Rated VDRM, RGK=1.0kΩ, TC=110°C 50 A
IGT V
D=7.0V, RL=100Ω 200 A
IGT V
D=7.0V, RL=100Ω, TC=-40°C 350 A
IH Initiating Current, IT=20mA, RGK=1.0kΩ 5.0 mA
IH Initiating Current, IT=20mA, RGK=1.0kΩ, TC=-40°C 10 mA
VGT V
D=7.0V, RL=100Ω 0.8 V
VGT V
D=7.0V, RL=100Ω, TC=-40°C 1.2 V
VGD V
D=Rated VDRM, RL=100Ω, TC=110°C 0.1 V
VTM I
TM=1.2A, TA=25°C 1.7 V
dv/dt VD=Rated VDRM, RGK=1.0kΩ 30 V/µs
TO-92 CASE
R5 (7-May 2015)
www.centralsemi.com