2N5060 THRU 2N5064 w w w. c e n t r a l s e m i . c o m SILICON CONTROLLED RECTIFIERS 0.8 AMP, 30 THRU 200 VOLT The CENTRAL SEMICONDUCTOR 2N5060 series devices are epoxy molded SCRs designed for control systems and sensing circuit applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25C unless otherwise noted) SYMBOL 2N5060 2N5061 2N5062 2N5063 2N5064 UNITS Peak Repetitive Off-State Voltage VDRM, VRRM 30 60 100 150 200 V RMS On-State Current (Note 1; TC=80C) IT(RMS) 0.8 A Average On-State Current (Note 1; TC=67C) IT(AV) 0.51 A Average On-State Current (Note 1; TC=102C) IT(AV) 0.255 A Peak One Cycle Surge Current (60Hz) ITSM 10 A I2t Value for Fusing (t=8.3ms) I2t 0.4 A2s Peak Forward Gate Power (tp<1.0s) PGM 0.1 W Average Forward Gate Power (t=8.3ms) PG(AV) 0.01 W Peak Forward Gate Current (tp<1.0s) IGM 1.0 A Peak Reverse Gate Voltage (tp<1.0s) VRGM 5.0 V Operating Junction Temperature TJ -40 to +125 C Storage Temperature Tstg -40 to +150 C Thermal Resistance (Note 2) JC 75 C/W Thermal Resistance JA 200 C/W Notes: 1) 180 Conduction Angles 2) Measured with the "flat side down" on a heatsink and held in position by a metal clamp over the curved surface. ELECTRICAL SYMBOL IDRM, IRRM IDRM, IRRM IGT IGT IH IH VGT VGT VGD VTM dv/dt CHARACTERISTICS: (TC=25C unless otherwise noted) TEST CONDITIONS MIN VD=Rated VDRM, RGK=1.0k VD=Rated VDRM, RGK=1.0k, TC=110C VD=7.0V, RL=100 VD=7.0V, RL=100, TC=-40C Initiating Current, IT=20mA, RGK=1.0k Initiating Current, IT=20mA, RGK=1.0k, TC=-40C VD=7.0V, RL=100 VD=7.0V, RL=100, TC=-40C VD=Rated VDRM, RL=100, TC=110C 0.1 ITM=1.2A, TA=25C VD=Rated VDRM, RGK=1.0k TYP MAX 10 50 200 350 5.0 10 0.8 1.2 1.7 30 UNITS A A A A mA mA V V V V V/s R5 (7-May 2015) 2N5060 THRU 2N5064 SILICON CONTROLLED RECTIFIERS 0.8 AMP, 30 THRU 200 VOLT ELECTRICAL CHARACTERISTICS - Continued: (TC=25C unless otherwise noted) 2N5062 2N5060 2N5063 2N5061 2N5064 SYMBOL TEST CONDITIONS TYP TYP td VD=Rated VDRM, IGT=1.0mA, 3.0 3.0 tr Forward Current=1.0A, di/dt=6.0A/s 0.2 0.2 tq Forward Current=1.0A, tp=50s, 0.1% Duty Cycle, di/dt=6.0A/s, dv/dt=20V/s, IGT=1.0mA 10 30 UNITS s s s TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Gate 3) Anode MARKING: FULL PART NUMBER R5 (7-May 2015) w w w. c e n t r a l s e m i . c o m OUTSTANDING SUPPORT AND SUPERIOR SERVICES PRODUCT SUPPORT Central's operations team provides the highest level of support to insure product is delivered on-time. * Supply management (Customer portals) * Custom bar coding for shipments * Inventory bonding * Custom product packing * Consolidated shipping options DESIGNER SUPPORT/SERVICES Central's applications engineering team is ready to discuss your design challenges. Just ask. * Free quick ship samples (2nd day air) * Special wafer diffusions * Online technical data and parametric search * PbSn plating options * SPICE models * Package details * Custom electrical curves * Application notes * Environmental regulation compliance * Application and design sample kits * Customer specific screening * Custom product and package development * Up-screening capabilities REQUESTING PRODUCT PLATING 1. 2. If requesting Tin/Lead plated devices, add the suffix " TIN/LEAD" to the part number when ordering (example: 2N2222A TIN/LEAD). If requesting Lead (Pb) Free plated devices, add the suffix " PBFREE" to the part number when ordering (example: 2N2222A PBFREE). CONTACT US Corporate Headquarters & Customer Support Team Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Main Tel: (631) 435-1110 Main Fax: (631) 435-1824 Support Team Fax: (631) 435-3388 www.centralsemi.com Worldwide Field Representatives: www.centralsemi.com/wwreps Worldwide Distributors: www.centralsemi.com/wwdistributors For the latest version of Central Semiconductor's LIMITATIONS AND DAMAGES DISCLAIMER, which is part of Central's Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms w w w. c e n t r a l s e m i . c o m (001)