RB751G-40 Schottky barrier Diodes
FEATURES
Small surface mounting type
Low reverse current and low forward voltage
High reliability
MARKING: 5
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
Parameter Symbol Limits Unit
Peak reverse voltage VRM 40 V
DC reverse voltage VR 30 V
Mean rectifying current IO 30 mA
Peak forward surge current IFSM 200 mA
Junction temperature Tj 125 ℃
Storage temperature Tstg -40~125 ℃
Electrical Ratings @TA=25℃
Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage VF 0.37 V IF=1mA
Reverse current IR 0.5
μA VR=30V
Capacitance between termin als CT 2 pF VR=1V,f=1MHZ
SOD-723
Typical Characteristics RB751G-40
