DS18001 Rev. P-2 1 of 3 BZX84C2V4 - BZX84C51
BZX84C2V4 - BZX84C51
Features
·Planar Die Construction
·350mW Power Dissipation
·Zener Voltages from 2.4V - 51V
·Ideally Suited for Automated Assembly
Processes
A
E
JL
TOP VIEW
M
BC
H
G
D
K
SOT-23
Dim Min Max
A0.37 0.51
B1.19 1.40
C2.10 2.50
D0.89 1.05
E0.45 0.61
G1.78 2.05
H2.65 3.05
J0.013 0.15
K0.89 1.10
L0.45 0.61
M0.076 0.178
All Dimensions in mm
Characteristic Symbol Value Unit
Forward Voltage@ IF= 10mAVF0.9V
Power Dissipation (Note 1) Pd350 mW
Thermal Resistance, Junction to Ambient Air (Note 1) RqJA 357 K/W
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, 300ms pulse width, period = 5ms.
3. f = 1KHz.
Maximum Ratings@ TA= 25°C unless otherwise specified
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diode
MAKING see table on page 2 the first code
DS18001 Rev. P-2 2 of 3 BZX84C2V4 - BZX84C51
Type
Number
Marking
Code
Zener Voltage
Range
(Note 2)
Maximum Zener
Impedance
(Note 3)
Maximum Reverse
Current
Typical Temperature
Coefficient
@I
ZT
mV/°C
VZ@I
ZT IZT ZZT @
IZT ZZK @I
ZK IRVRMin Max
Nom (V) Min (V) Max (V) (mA) (W)(W) (mA) (mA) (V)
BZX84C2V4 Z11/KZB 2.4 2.2 2.6 5.0 100 600 1.0 50 1.0 -3.5 0
BZX84C2V7 Z12/KZC 2.7 2.5 2.9 5.0 100 600 1.0 20 1.0 -3.5 0
BZX84C3V0 Z13/KZD 3.0 2.8 3.2 5.0 95 600 1.0 10 1.0 -3.5 0
BZX84C3V3 Z14/KZE 3.3 3.1 3.5 5.0 95 600 1.0 5.0 1.0 -3.5 0
BZX84C3V6 Z15/KZF 3.6 3.4 3.8 5.0 90 600 1.0 5.0 1.0 -3.5 0
BZX84C3V9 Z16/KZG 3.9 3.7 4.1 5.0 90 600 1.0 3.0 1.0 -3.5 0
BZX84C4V3 Z17/KZH 4.3 4.0 4.6 5.0 90 600 1.0 3.0 1.0 -3.5 0
BZX84C4V7 Z1/KZ1 4.7 4.4 5.0 5.0 80 500 1.0 3.0 2.0 -3.5 0.2
BZX84C5V1 Z2/KZ2 5.1 4.8 5.4 5.0 60 480 1.0 2.0 2.0 -2.7 1.2
BZX84C5V6 Z3/KZ3 5.6 5.2 6.0 5.0 40 400 1.0 1.0 2.0 -2.0 2.5
BZX84C6V2 Z4/KZ4 6.2 5.8 6.6 5.0 10 150 1.0 3.0 4.0 0.4 3.7
BZX84C6V8 Z5/KZ5 6.8 6.4 7.2 5.0 15 80 1.0 2.0 4.0 1.2 4.5
BZX84C7V5 Z6/KZ6 7.5 7.0 7.9 5.0 15 80 1.0 1.0 5.0 2.5 5.3
BZX84C8V2 Z7/KZ7 8.2 7.7 8.7 5.0 15 80 1.0 0.7 5.0 3.2 6.2
BZX84C9V1 Z8/KZ8 9.1 8.5 9.6 5.0 15 100 1.0 0.5 6.0 3.8 7.0
BZX84C10 Z9/KZ9/8Q 10 9.4 10.6 5.0 20 150 1.0 0.2 7.0 4.5 8.0
BZX84C11 Y1/KY1 11 10.4 11.6 5.0 20 150 1.0 0.1 8.0 5.4 9.0
BZX84C12 Y2/KY2 12 11.4 12.7 5.0 25 150 1.0 0.1 8.0 6.0 10.0
BZX84C13 Y3/KY3 13 12.4 14.1 5.0 30 170 1.0 0.1 8.0 7.0 11.0
BZX84C15 Y4/KY4 15 13.8 15.6 5.0 30 200 1.0 0.1 10.5 9.2 13.0
BZX84C16 Y5/KY5 16 15.3 17.1 5.0 40 200 1.0 0.1 11.2 10.4 14.0
BZX84C18 Y6/KY6 18 16.8 19.1 5.0 45 225 1.0 0.1 12.6 12.4 16.0
BZX84C20 Y7/KY7 20 18.8 21.2 5.0 55 225 1.0 0.1 14.0 14.4 18.0
BZX84C22 Y8/KY8 22 20.8 23.3 5.0 55 250 1.0 0.1 15.4 16.4 20.0
BZX84C24 Y9/KY9 24 22.8 25.6 5.0 70 250 1.0 0.1 16.8 18.4 22.0
BZX84C27 Y10/KYA 27 25.1 28.9 2.0 80 300 0.5 0.1 18.9 21.4 25.3
BZX84C30 Y11/KYB 30 28.0 32.0 2.0 80 300 0.5 0.1 21.0 24.4 29.4
BZX84C33 Y12/KYC 33 31.0 35.0 2.0 80 325 0.5 0.1 23.1 27.4 33.4
BZX84C36 Y13/KYD 36 34.0 38.0 2.0 90 350 0.5 0.1 25.2 30.4 37.4
BZX84C39 Y14/KYE 39 37.0 41.0 2.0 130 350 0.5 0.1 27.3 33.4 41.2
BZX84C43 Y15/KYF 43 40.0 46.0 2.0 150 375 0.5 0.1 30.1 10.0 12.0
BZX84C47 Y16/KYG 47 44.0 50.0 2.0 170 375 0.5 0.1 32.9 10.0 12.0
BZX84C51 Y17/KYH 51 48.0 54.0 2.0 180 400 0.5 0.1 35.7 10.0 12.0
Electrical Characteristics @ TA= 25°C unless otherwise specified
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, 300ms pulse width, period = 5ms.
3. f = 1KHz.
DS18001 Rev. P-2 3 of 3 BZX84C2V4 - BZX84C51
0
10
20
30
40
50
01 2 3 4 5 6 78910
I , ZENER CURRENT (mA)
Z
V , ZENER VOLTAGE (V)
Fi
g
. 2 Zener Breakdown Characteristics
Z
T = 25°C
jC2V7
C3V3
C3V9
C4V7
C5V6
C6V8
C8V2
Test Current I
5.0mA
Z
0
2
4
6
8
10
10 20 30 40 50 60 70 80 90 100
I , ZENER CURRENT (mA)
Z
V , ZENER VOLTAGE (V)
Fi
g
. 4 Zener Breakdown Characteristics
Z
Tj = 25°C
Test Current I
2mA
Z
C39
C43
C47
C51
C , JUNCTION CAPACITANCE (pF)
j
10
100
1000
10 100
1
V , NOMINAL ZENER VOLTAGE (V)
Fig. 5 Junction Capacitance vs Nominal Zener Voltage
Z
T = 25 °C
j
V=1V
R
V=2V
R
V=1V
R
V=2V
R
400
T , Ambient Temperature, (°C)
A
Fi
g
. 1 Power Deratin
g
Curve
P , Power Dissipation (mW)
d
See Note 1
200
100
300
0
5
00
0100 200
0
10
20
30
0
I , ZENER CURRENT (mA)
Z
V , ZENER VOLTAGE (V)
Fi
g
. 3 Zener Breakdown Characteristics
Z
10 20 30 40
T = 25°C
j
Test current I
5mA
Z
Test current I
2mA
Z
C10
C12
C18
C22
C27
C33 C36
C15
