1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
N–Channel — Depletion
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage VDS 30 Vdc
Drain–Gate Voltage VDG 30 Vdc
Gate–Source Voltage VGS 30 Vdc
Forward Gate Current IG(f) 50 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD350
2.8 mW
mW/°C
Operating and Storage Channel
Temperature Range Tchannel,
Tstg –65 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = 1.0 µAdc, VDS = 0) V(BR)GSS 30 — — Vdc
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0)
(VGS = 15 Vdc, VDS = 0, TA = 100°C)
IGSS —
——
—1.0
0.2 nAdc
µAdc
Drain–Cutof f Current
(VDS = 15 Vdc, VGS = 12 Vdc)
(VDS = 15 Vdc, VGS = 12 Vdc, TA = 100°C)
ID(off) —
——
—1.0
0.1 nAdc
µAdc
Gate Source Voltage
(VDS = 15 Vdc, ID = 10 nAdc) MPF4392
MPF4393
VGS –2.0
–0.5 —
—–5.0
–3.0
Vdc
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current(1)
(VDS = 15 Vdc, VGS = 0) MPF4392
MPF4393
IDSS 25
5.0 —
—75
30
mAdc
Drain–Source On–V oltage
(ID = 6.0 mAdc, VGS = 0) MPF4392
(ID = 3.0 mAdc, VGS = 0) MPF4393
VDS(on) —
——
—0.4
0.4
Vdc
Static Drain–Source On Resistance
(ID = 1.0 mAdc, VGS = 0) MPF4392
MPF4393
rDS(on) —
——
—60
100
Ω
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS = 15 Vdc, ID = 25 mAdc, f = 1.0 kHz) MPF4392
(VDS = 15 Vdc, ID = 5.0 mAdc, f = 1.0 kHz) MPF4393
|yfs|—
—17
12 —
—
mmhos
1. Pulse Test: Pulse Width
v
300 µs, Duty Cycle
v
3.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MPF4392/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 5
TO–92 (TO–226AA)
123
Motorola Preferred Devices
Motorola, Inc. 1997
1 DRAIN
2 SOURCE
3
GATE
REV 1
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
SMALL–SIGNAL CHARACTERISTICS (continued)
Drain–Source “ON” Resistance
(VGS = 0, ID = 0, f = 1.0 kHz) MPF4392
MPF4393
rds(on) —
——
—60
100
Ω
Input Capacitance (VGS = 15 Vdc, VDS = 0, f = 1.0 MHz) Ciss —6.0 10 pF
Reverse T ransfer Capacitance
(VGS = 12 Vdc, VDS = 0, f = 1.0 MHz)
(VDS = 15 Vdc, ID = 10 mAdc, f = 1.0 MHz)
Crss —
—2.5
3.2 3.5
—
pF
SWITCHING CHARACTERISTICS
Rise Time (See Figure 2)
(ID(on) = 6.0 mAdc) MPF4392
(ID(on) = 3.0 mAdc) MPF4393
tr—
—2.0
2.5 5.0
5.0
ns
Fall T ime (See Figure 4)
(VGS(off) = 7.0 Vdc) MPF4392
(VGS(off) = 5.0 Vdc) MPF4393
tf—
—15
29 20
35
ns
T urn–On Time (See Figures 1 and 2)
(ID(on) = 6.0 mAdc) MPF4392
(ID(on) = 3.0 mAdc) MPF4393
ton —
—4.0
6.5 15
15
ns
T urn–Off Time (See Figures 3 and 4)
(VGS(off) = 7.0 Vdc) MPF4392
(VGS(off) = 5.0 Vdc) MPF4393
toff —
—20
37 35
55
ns
Figure 1. Turn–On Delay Time Figure 2. Rise Time
Figure 3. Turn–Off Delay Time Figure 4. Fall Time
TYPICAL SWITCHING CHARACTERISTICS
ID, DRAIN CURRENT (mA)
, TURN–ON DELAY TIME (ns)
d(on)
t
5.0
2.0
20
10
0.5 1.0 3.0 7.0
5.0
1.0
50
100
0.7 2.0 10 20
, RISE TIME (ns)
r
t
, TURN–OFF DELAY TIME (ns)
d(off)
t
, FALL TIME (ns)
f
t
30 50
200
500
1000
VGS(off) = 7.0 V
= 5.0 V
MPF4392
MPF4393
ID, DRAIN CURRENT (mA)
5.0
2.0
20
10
0.5 1.0 3.0 7.0
5.0
1.0
50
100
0.7 2.0 10 20 30 50
200
500
1000
ID, DRAIN CURRENT (mA)
5.0
2.0
20
10
0.5 1.0 3.0 7.05.0
1.0
50
100
0.7 2.0 10 20 30 50
200
500
1000
ID, DRAIN CURRENT (mA)
5.0
2.0
20
10
0.5 1.0 3.0 7.05.0
1.0
50
100
0.7 2.0 10 20 30 50
200
500
1000
TJ = 25
°
CTJ = 25
°
C
TJ = 25
°
C TJ = 25
°
C
RK = RD
′
RK = 0
RK = RD
′
RK = 0
RK = RD
′
RK = 0
RK = RD
′
RK = 0
VGS(off) = 7.0 V
= 5.0 V
MPF4392
MPF4393
VGS(off) = 7.0 V
= 5.0 V
MPF4392
MPF4393
VGS(off) = 7.0 V
= 5.0 V
MPF4392
MPF4393
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 5. Switching Time Test Circuit
10
2.0
15
3.0
5.0
7.0
0.5 1.0 3.0 305.00.30.1 100.050.03 VR, REVERSE VOLTAGE (VOL TS)
C, CAPACITANCE (pF)
50 17020–10–40 80 140–70
r
1.8
1.0
2.0
1.2
1.4
1.6
0.8
0.6
0.4
, DRAIN–SOURCE ON–STA TE
ds(on)
RESIST ANCE (NORMALIZED)
Tchannel, CHANNEL TEMPERATURE (
°
C)
1.5
1.0
110
–VDD
VGG
RGG
RT
RGEN
50
Ω
VGEN
RK
RD
OUTPUT
INPUT
50
Ω
50
Ω
SET VDS(off) = 10 V
INPUT PULSE
tr
≤
0.25 ns
tf
≤
0.5 ns
PULSE WIDTH = 2.0
µ
s
DUTY CYCLE
≤
2.0%
RGG
&
RK
RD
′
= RD(RT + 50)
RD + RT + 50
Figure 6. Typical Forward Transfer Admittance
NOTE 1
The switching characteristics shown above were measured using a
test circuit similar to Figure 5. At the beginning of the switching
interval, the gate voltage is at Gate Supply Voltage (–VGG). The
Drain–Source Voltage (VDS) is slightly lower than Drain Supply
Voltage (VDD) due to the voltage divider. Thus Reverse Transfer
Capacitance (Crss) or Gate–Drain Capacitance (Cgd) is charged to
VGG + VDS.
During the turn–on interval, Gate–Source Capacitance (Cgs)
discharges through the series combination of RGen and RK. Cgd must
discharge to VDS(on) through RG and RK in series with the parallel
combination of effective load impedance (R′D) and Drain–Source
Resistance (rds). During the turn–off, this charge flow is reversed.
Predicting turn–on time is somewhat difficult as the channel
resistance rds is a function of the gate–source voltage. While Cgs
discharges, VGS approaches zero and rds decreases. Since Cgd
discharges through rds, turn–on time is non–linear. During turn–off,
the situation is reversed with rds increasing as Cgd charges.
The above switching curves show two impedance conditions:
1) RK is equal to RD′ which simulates the switching behavior of
cascaded stages where the driving source impedance is normally the
load impedance of the previous stage, and 2) RK = 0 (low impedance)
the driving source impedance is that of the generator.
Figure 7. Typical Capacitance
ID, DRAIN CURRENT (mA)
2.0
5.0
3.0
7.0
0.5 1.0 3.0 7.05.0 5030
10
20
0.7 2.0 10 20
, FORWARD TRANSFER ADMITTANCE (mmhos)
fs
y
80
120
160
200
1.0 3.0 5.02.0
VGS, GATE–SOURCE VOLTAGE (VOLTS)
4.00
40
6.0 7.0 8.0
0
r , DRAIN–SOURCE ON–STA TE
ds(on)
RESISTANCE (OHMS)
Tchannel = 25
°
C
(Cds IS NEGLIGIBLE)
Cgs
Tchannel = 25
°
C
VDS = 15 V
Figure 8. Effect of Gate–Source Voltage
On Drain–Source Resistance Figure 9. Effect of Temperature On
Drain–Source On–State Resistance
MPF4392
MPF4393 Cgd
ID = 1.0 mA
VGS = 0
IDSS
= 10
mA
25
mA 50 mA 75 mA 100 mA 125 mA
Tchannel = 25
°
C
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
IDSS, ZERO–GATE VOLT AGE DRAIN CURRENT (mA)
, DRAIN–SOURCE ON–STA TE
ds(on)
r
20
10
30
40
50
30 40 50 60 70
20
RESISTANCE (OHMS)
010 0
1.0
2.0
3.0
4.0
5.0
, GATE–SOURCE VOLTAGE
GS
V(VOLTS)
6.0
7.0
8.0
9.0
10
70
60
80
90
100
80 90 100 110 120 130 140 150
NOTE 2
The Zero–Gate–Voltage Drain Current (IDSS), is the principle
determinant of other J–FET characteristics. Figure 10 shows
the relationship of Gate–Source Off Voltage (VGS(off)) and
Drain–Source On Resistance (rds(on)) to IDSS. Most of the
devices will be within ±10% of the values shown in Figure 10.
This data will be useful in predicting the characteristic variations
for a given part number.
For example:
Unknown
rds(on) and VGS range for an MPF4392
The electrical characteristics table indicates that an MPF4392
has an IDSS range of 25 to 75 mA. Figure 10 shows rds(on) = 52
Ohms for IDSS = 25 mA and 30 Ohms for IDSS = 75 mA. The
corresponding VGS values are 2.2 volts and 4.8 volts.
Figure 10. Effect of IDSS On Drain–Source
Resistance and Gate–Source Voltage
Tchannel = 25
°
C
rDS(on) @ VGS = 0
VGS(off)
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
CASE 029–04
(TO–226AA)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
H
SECTION X–X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.022 0.41 0.55
F0.016 0.019 0.41 0.48
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
1
STYLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE
ISSUE AD
6 Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
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MPF4392/D
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