SZNUD3160DMT1G - ON Semiconductor L.L.C.

February, 2012 − Rev. 6

1Publication Order Number:

NUD3160/D

NUD3160, SZNUD3160

Industrial Inductive

Load Driver

This micro−integrated part provides a single component solution to

switch inductive loads such as relays, solenoids, and small DC motors

without the need of a free−wheeling diode. It accepts logic level

inputs, thus allowing it to be driven by a large variety of devices

including logic gates, inverters, and microcontrollers.

Features

•Provides Robust Interface between D.C. Relay Coils and Sensitive

Logic

•Capable of Driving Relay Coils Rated up to 150 mA at 12 V, 24 V

or 48 V

•Replaces 3 or 4 Discrete Components for Lower Cost

•Internal Zener Eliminates Need for Free−Wheeling Diode

•Meets Load Dump and other Automotive Specs

•SZ Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

•These are Pb−Free Devices

Typical Applications

•Automotive and Industrial Environment

•Drives Window, Latch, Door, and Antenna Relays

Benefits

•Reduced PCB Space

•Standardized Driver for Wide Range of Relays

•Simplifies Circuit Design and PCB Layout

•Compliance with Automotive Specifications

Gate (1) 10 k

100 k

Drain (3)

Source (2)

Figure 1. Internal Circuit Diagrams

Gate (2) 10 k

100 k

Drain (6)

Source (1)

Gate (5)

Drain (3)

Source (4)

10 k

100 k

CASE 318 CASE 318F

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MARKING DIAGRAMS

SOT−23

CASE 318

STYLE 21

JW8 MG

JW8 = Specific Device Code

M = Date Code

G= Pb−Free Package

(Note: Microdot may be in either location)

SC−74

CASE 318F

STYLE 7

JW8 = Specific Device Code

M = Date Code

G= Pb−Free Package

(Note: Microdot may be in either location)

JW8 MG

Device Package Shipping†

ORDERING INFORMATION

NUD3160LT1G SOT−23

(Pb−Free)

3000 / Tape &

Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

NUD3160DMT1G SC−74

(Pb−Free)

3000 / Tape &

Reel

SZNUD3160LT1G SOT−23

(Pb−Free)

3000 / Tape &

Reel

SZNUD3160DMT1G SC−74

(Pb−Free)

3000 / Tape &

Reel

NUD3160, SZNUD3160

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MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)

Symbol Rating Value Unit

VDSS Drain−to−Source Voltage – Continuous (TJ = 125°C) 60 V

VGSS Gate−to−Source Voltage – Continuous (TJ = 125°C) 12 V

IDDrain Current – Continuous (TJ = 125°C)

Minimum copper, double sided board, TA = 80°C

SOT−23

SC74 Single device driven

SC74 Both devices driven

1 in2 copper, double sided board, TA = 25°C

SOT−23

SC74 Single device driven

SC74 Both devices driven

158

157

132 ea

272

263

230 ea

EZSingle Pulse Drain−to−Source Avalanche Energy

(For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C)

200 mJ

PPK Peak Power Dissipation, Drain−to−Source (Notes 1 and 2)

(TJ Initial = 85°C)

20 W

ELD1 Load Dump Pulse, Drain−to−Source (Note 3)

RSOURCE = 0.5 W, T = 300 ms)

(For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C)

60 V

ELD2 Inductive Switching Transient 1, Drain−to−Source

(Waveform: RSOURCE = 10 W, T = 2.0 ms)

(For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C)

100 V

ELD3 Inductive Switching Transient 2, Drain−to−Source

(Waveform: RSOURCE = 4.0 W, T = 50 ms)

(For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C)

300 V

Rev−Bat Reverse Battery, 10 Minutes (Drain−to−Source)

(For Relay’s Coils/Inductive Loads of 80 W or more)

−14 V

Dual−Volt Dual Voltage Jump Start, 10 Minutes (Drain−to−Source) 28 V

ESD Human Body Model (HBM)

According to EIA/JESD22/A114 Specification

2000 V

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

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THERMAL CHARACTERISTICS

Symbol Rating Value Unit

TAOperating Ambient Temperature −40 to 125 °C

TJMaximum Junction Temperature 150 °C

TSTG Storage Temperature Range −65 to 150 °C

PDTotal Power Dissipation (Note 4) SOT−23

Derating above 25°C

225

1.8

mW/°C

PDTotal Power Dissipation (Note 4) SC−74

Derating above 25°C

380

3.0

mW/°C

RqJA Thermal Resistance, Junction–to–Ambient

Minimum Copper SOT−23

SC−74 One Device Powered

SC−74 Both Devices Equally Powered

300 mm2 Copper SOT−23

SC−74 One Device Powered

SC−74 Both Devices Equally Powered

556

398

395

420

270

°C/W

1. Nonrepetitive current square pulse 1.0 ms duration.

2. For different square pulse durations, see Figure 12.

3. Nonrepetitive load dump pulse per Figure 3.

4. Mounted onto minimum pad board.

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain to Source Sustaining Voltage

(ID = 10 mA)

VBRDSS 61 66 70 V

Drain to Source Leakage Current

(VDS = 12 V, VGS = 0 V)

(VDS = 12 V, VGS = 0 V, TJ = 125°C)

(VDS = 60 V, VGS = 0 V)

(VDS = 60 V, VGS = 0 V, TJ = 125°C)

IDSS

−

0.5

1.0

Gate Body Leakage Current

(VGS = 3.0 V, VDS = 0 V)

(VGS = 3.0 V, VDS = 0 V, TJ = 125°C)

(VGS = 5.0 V, VDS = 0 V)

(VGS = 5.0 V, VDS = 0 V, TJ = 125°C)

IGSS

−

110

ON CHARACTERISTICS

Gate Threshold Voltage

(VGS = VDS, ID = 1.0 mA)

(VGS = VDS, ID = 1.0 mA, TJ = 125°C)

VGS(th) 1.3

1.3

1.8

−

2.0

Drain to Source On−Resistance

(ID = 150 mA, VGS = 3.0 V)

(ID = 150 mA, VGS = 3.0 V, TJ = 125°C)

(ID = 150 mA, VGS = 5.0 V)

(ID = 150 mA, VGS = 5.0 V, TJ = 125°C)

RDS(on)

−

2.4

3.7

1.8

2.9

Output Continuous Current

(VDS = 0.3 V, VGS = 5.0 V)

(VDS = 0.3 V, VGS = 5.0 V, TJ = 125°C)

IDS(on) 150

100

200

−

Forward Transconductance

(VDS = 12 V, ID = 150 mA)

gFS −400 −mmho

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 12 V, VGS = 0 V, f = 10 kHz)

Ciss −30 −pf

Output Capacitance

(VDS = 12 V, VGS = 0 V, f = 10 kHz)

Coss −14 −pf

Transfer Capacitance

(VDS = 12 V, VGS = 0 V, f = 10 kHz)

Crss −6.0 −pf

SWITCHING CHARACTERISTICS

Propagation Delay Times:

High to Low Propagation Delay; Figure 2, (VDS = 12 V, VGS = 3.0 V)

Low to High Propagation Delay; Figure 2, (VDS = 12 V, VGS = 3.0 V)

High to Low Propagation Delay; Figure 2, (VDS = 12 V, VGS = 5.0 V)

Low to High Propagation Delay; Figure 2, (VDS = 12 V, VGS = 5.0 V)

tPHL

tPLH

tPHL

tPLH

−

918

798

331

1160

−

Transition Times:

Fall Time; Figure 2, (VDS = 12 V, VGS = 3.0 V)

Rise Time; Figure 2, (VDS = 12 V, VGS = 3.0 V)

Fall Time; Figure 2, (VDS = 12 V, VGS = 5.0 V)

Rise Time; Figure 2, (VDS = 12 V, VGS = 5.0 V)

−

2290

618

622

600

−

NUD3160, SZNUD3160

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TYPICAL WAVEFORMS

(TJ = 25°C unless otherwise specified)

Figure 2. Switching Waveforms

Load Dump Pulse Not Suppressed:

Vr = 13.5 V Nominal ±10%

VS = 60 V Nominal ±10%

T = 300 ms Nominal ±10%

tr = 1 − 10 ms ±10%

Figure 3. Load Dump Waveform Definition

90%

10%

Vr, Ir

10% of Peak;

Reference = Vr, Ir

Vout

Vin

0 V

VOH

VIH

tPLH

tPHL

50%

90%

50%

10% VOL

NUD3160, SZNUD3160

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TYPICAL PERFORMANCE CURVES

(TJ = 25°C unless otherwise specified)

Figure 4. Drain−to−Source Leakage vs.

Junction Temperature

Figure 5. Gate−to−Source Leakage vs.

Junction Temperature

Figure 6. Breakdown Voltage vs.

Junction Temperature

TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

7550250−25−50

10050250−25−50

Figure 7. Output Characteristics

TJ, JUNCTION TEMPERATURE (°C)

125500−25−50

65.0

65.2

65.4

65.8

66.0

66.4

IDSS, DRAIN LEAKAGE (mA)

125100 75 125

IGSS GATE LEAKAGE (mA)

VGS = 5 V

VGS = 3 V

25 10075

65.6

64.8

BVDSS BREAKDOWN VOLTAGE (V)

ID = 10 mA

Figure 8. Transfer Function

VDS = 60 V

Figure 9. On Resistance Variation vs

Junction Temperature

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

0.70.50.40.30.20.0

1E−03

1E−02

1E−01

1E+00

1E+01

1E+03

0.1 0.6 0.8

ID DRAIN CURRENT (mA)

VGS = 5 V VGS = 3 V

VGS = 2 V

VGS = 2.5 V

VGS = 1.5 V

VGS, GATE−TO−SOURCE VOLTAGE (V)

2.62.01.81.61.41.0

1E−07

1E−05

1E−06

1E−04

0.1

1.2 2.4

ID DRAIN CURRENT (mA)

125 °C

2.2

0.001

0.01

85 °C25 °C−40 °C

VDS = 0.8 V

TJ, JUNCTION TEMPERATURE (°C)

7550250−25−50

800

1200

1600

2000

2400

2800

RDS(ON), DRAIN−TO−SOURCE RESISTANCE (mW)

125100

ID = 0.15 A

3200

VGS = 5.0 V

VGS = 3.0 V

66.2 1E+02

NUD3160, SZNUD3160

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TYPICAL PERFORMANCE CURVES

(TJ = 25°C unless otherwise specified)

Figure 10. On Resistance Variation vs.

Gate−to−Source Voltage

Figure 11. Zener Clamp Voltage vs. Zener

Current

VGS, GATE−TO−SOURCE VOLTAGE (V)

2.21.81.61.41.21.0

2.0 2.4

ID = 250 mA

IZ, ZENER CURRENT (mA)

101.00.1

62.0

62.5

63.0

63.5

64.0

64.5

65.0

100 1000

VZ ZENER CLAMP VOLTAGE (V)

100

RDS(ON), DRAIN−TO−SOURCE

RESISTANCE (mW)

125 °C

85 °C

25 °C

−40 °C125 °C

85 °C

25 °C

−40 °C

65.5

66.0

2.82.6 3.0

66.5

67.0

67.5

68.0

Figure 12. Maximum Non−repetitive Surge

Power vs. Pulse Width

PW, PULSE WIDTH (ms)

100100.1

100

POWER (WATTS)

1.0

Figure 13. Thermal Performance vs. Board

Copper Area

COPPER AREA (mm2)

7005000

200

400

600

qJA (°C/W)

100 200 300 400 600

300

500

SC74−1

SC74−2

SOT23

SC74−1 (One Device Powered)

SC74−2 (Both Devices Powered Equally)

1 oz. Copper, Single−sided Board

NUD3160, SZNUD3160

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Figure 14. Applications Diagram

12 V Battery

+−

Micro

Processor

Signal

for

Relay

APPLICATIONS INFORMATION

Relay, Vibrator,

Inductive Load

NUD3160

Gate (1) 10 k

100 K

Drain (3)

Source (2)

NUD3160, SZNUD3160

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PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH

THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

VIEW C

0.25

SEE VIEW C

DIM

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.001

b0.37 0.44 0.50 0.015

c0.09 0.13 0.18 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.10 0.20 0.30 0.004

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

0.35 0.54 0.69 0.014 0.021 0.029

0−−− 10 0 −−− 10

q°°°°

STYLE 21:

PIN 1. GATE

2. SOURCE

3. DRAIN

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

ǒmm

inchesǓ

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

SOT−23 (TO−236)

CASE 318−08

ISSUE AP

NUD3160, SZNUD3160

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PACKAGE DIMENSIONS

SC−74

CASE 318F−05

ISSUE M

456

0.05 (0.002)

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES

LEAD FINISH THICKNESS. MINIMUM LEAD

THICKNESS IS THE MINIMUM THICKNESS

OF BASE MATERIAL.

4. 318F−01, −02, −03, −04 OBSOLETE. NEW

STANDARD 318F−05.

0.7

0.028

1.9

0.074

0.95

0.037

2.4

0.094

1.0

0.039

0.95

0.037

ǒmm

inchesǓ

SCALE 10:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

DIM

MIN NOM MAX MIN

MILLIMETERS

0.90 1.00 1.10 0.035

INCHES

A1 0.01 0.06 0.10 0.001

b0.25 0.37 0.50 0.010

c0.10 0.18 0.26 0.004

D2.90 3.00 3.10 0.114

E1.30 1.50 1.70 0.051

e0.85 0.95 1.05 0.034

0.20 0.40 0.60 0.008

0.039 0.043

0.002 0.004

0.015 0.020

0.007 0.010

0.118 0.122

0.059 0.067

0.037 0.041

0.016 0.024

NOM MAX

2.50 2.75 3.00 0.099 0.108 0.118

− −

0°10°0°10°

STYLE 7:

PIN 1. SOURCE 1

2. GATE 1

3. DRAIN 2

4. SOURCE 2

5. GATE 2

6. DRAIN 1

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

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USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

NUD3160/D

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