NUD3160, SZNUD3160 Industrial Inductive Load Driver This micro-integrated part provides a single component solution to switch inductive loads such as relays, solenoids, and small DC motors without the need of a free-wheeling diode. It accepts logic level inputs, thus allowing it to be driven by a large variety of devices including logic gates, inverters, and microcontrollers. http://onsemi.com MARKING DIAGRAMS Features 3 * Provides Robust Interface between D.C. Relay Coils and Sensitive * * * * * * 1 Logic Capable of Driving Relay Coils Rated up to 150 mA at 12 V, 24 V or 48 V Replaces 3 or 4 Discrete Components for Lower Cost Internal Zener Eliminates Need for Free-Wheeling Diode Meets Load Dump and other Automotive Specs SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These are Pb-Free Devices 2 JW8 MG G JW8 = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) SC-74 CASE 318F STYLE 7 6 1 JW8 MG G JW8 = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) Typical Applications * Automotive and Industrial Environment * Drives Window, Latch, Door, and Antenna Relays ORDERING INFORMATION Package Shipping NUD3160LT1G SOT-23 (Pb-Free) 3000 / Tape & Reel SZNUD3160LT1G SOT-23 (Pb-Free) 3000 / Tape & Reel NUD3160DMT1G SC-74 (Pb-Free) 3000 / Tape & Reel SZNUD3160DMT1G SC-74 (Pb-Free) 3000 / Tape & Reel Device Benefits * * * * SOT-23 CASE 318 STYLE 21 Reduced PCB Space Standardized Driver for Wide Range of Relays Simplifies Circuit Design and PCB Layout Compliance with Automotive Specifications For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Drain (3) Gate (1) Gate (2) 10 k 100 k 10 k 10 k CASE 318 (c) Semiconductor Components Industries, LLC, 2012 Gate (5) 100 k 100 k Source (2) February, 2012 - Rev. 6 Drain (3) Drain (6) Source (4) Source (1) CASE 318F Figure 1. Internal Circuit Diagrams 1 Publication Order Number: NUD3160/D NUD3160, SZNUD3160 MAXIMUM RATINGS (TJ = 25C unless otherwise specified) Symbol Rating Value Unit VDSS Drain-to-Source Voltage - Continuous (TJ = 125C) 60 V VGSS Gate-to-Source Voltage - Continuous (TJ = 125C) 12 V ID Drain Current - Continuous (TJ = 125C) Minimum copper, double sided board, TA = 80C SOT-23 SC74 Single device driven SC74 Both devices driven 1 in2 copper, double sided board, TA = 25C SOT-23 SC74 Single device driven SC74 Both devices driven mA 158 157 132 ea 272 263 230 ea EZ Single Pulse Drain-to-Source Avalanche Energy (For Relay's Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85C) 200 mJ PPK Peak Power Dissipation, Drain-to-Source (Notes 1 and 2) (TJ Initial = 85C) 20 W ELD1 Load Dump Pulse, Drain-to-Source (Note 3) RSOURCE = 0.5 W, T = 300 ms) (For Relay's Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85C) 60 V ELD2 Inductive Switching Transient 1, Drain-to-Source (Waveform: RSOURCE = 10 W, T = 2.0 ms) (For Relay's Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85C) 100 V ELD3 Inductive Switching Transient 2, Drain-to-Source (Waveform: RSOURCE = 4.0 W, T = 50 ms) (For Relay's Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85C) 300 V Rev-Bat Reverse Battery, 10 Minutes (Drain-to-Source) (For Relay's Coils/Inductive Loads of 80 W or more) -14 V Dual-Volt Dual Voltage Jump Start, 10 Minutes (Drain-to-Source) 28 V 2000 V ESD Human Body Model (HBM) According to EIA/JESD22/A114 Specification Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com 2 NUD3160, SZNUD3160 THERMAL CHARACTERISTICS Symbol Rating Unit TA Operating Ambient Temperature -40 to 125 C TJ Maximum Junction Temperature 150 C -65 to 150 C TSTG Storage Temperature Range PD Total Power Dissipation (Note 4) Derating above 25C SOT-23 225 1.8 mW mW/C PD Total Power Dissipation (Note 4) Derating above 25C SC-74 380 3.0 mW mW/C SOT-23 SC-74 One Device Powered SC-74 Both Devices Equally Powered 556 556 398 SOT-23 SC-74 One Device Powered SC-74 Both Devices Equally Powered 395 420 270 RqJA Thermal Resistance, Junction-to-Ambient Minimum Copper 300 mm2 Copper 1. 2. 3. 4. Value Nonrepetitive current square pulse 1.0 ms duration. For different square pulse durations, see Figure 12. Nonrepetitive load dump pulse per Figure 3. Mounted onto minimum pad board. http://onsemi.com 3 C/W NUD3160, SZNUD3160 ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Symbol Min Typ Max Unit VBRDSS 61 66 70 V - - - - - - - - 0.5 1.0 50 80 - - - - - - - - 60 80 90 110 1.3 1.3 1.8 - 2.0 2.0 - - - - - - - - 2.4 3.7 1.8 2.9 150 100 200 - - - gFS - 400 - mmho Input Capacitance (VDS = 12 V, VGS = 0 V, f = 10 kHz) Ciss - 30 - pf Output Capacitance (VDS = 12 V, VGS = 0 V, f = 10 kHz) Coss - 14 - pf Transfer Capacitance (VDS = 12 V, VGS = 0 V, f = 10 kHz) Crss - 6.0 - pf tPHL tPLH - - 918 798 - - tPHL tPLH - - 331 1160 - - tf tr - - 2290 618 - - tf tr - - 622 600 - - Characteristic OFF CHARACTERISTICS Drain to Source Sustaining Voltage (ID = 10 mA) Drain to Source Leakage Current (VDS = 12 V, VGS = 0 V) (VDS = 12 V, VGS = 0 V, TJ = 125C) (VDS = 60 V, VGS = 0 V) (VDS = 60 V, VGS = 0 V, TJ = 125C) IDSS Gate Body Leakage Current (VGS = 3.0 V, VDS = 0 V) (VGS = 3.0 V, VDS = 0 V, TJ = 125C) (VGS = 5.0 V, VDS = 0 V) (VGS = 5.0 V, VDS = 0 V, TJ = 125C) IGSS mA mA ON CHARACTERISTICS Gate Threshold Voltage (VGS = VDS, ID = 1.0 mA) (VGS = VDS, ID = 1.0 mA, TJ = 125C) VGS(th) Drain to Source On-Resistance (ID = 150 mA, VGS = 3.0 V) (ID = 150 mA, VGS = 3.0 V, TJ = 125C) (ID = 150 mA, VGS = 5.0 V) (ID = 150 mA, VGS = 5.0 V, TJ = 125C) RDS(on) Output Continuous Current (VDS = 0.3 V, VGS = 5.0 V) (VDS = 0.3 V, VGS = 5.0 V, TJ = 125C) IDS(on) Forward Transconductance (VDS = 12 V, ID = 150 mA) V W mA DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS Propagation Delay Times: High to Low Propagation Delay; Figure 2, (VDS = 12 V, VGS = 3.0 V) Low to High Propagation Delay; Figure 2, (VDS = 12 V, VGS = 3.0 V) High to Low Propagation Delay; Figure 2, (VDS = 12 V, VGS = 5.0 V) Low to High Propagation Delay; Figure 2, (VDS = 12 V, VGS = 5.0 V) Transition Times: Fall Time; Figure 2, (VDS = 12 V, VGS = 3.0 V) Rise Time; Figure 2, (VDS = 12 V, VGS = 3.0 V) Fall Time; Figure 2, (VDS = 12 V, VGS = 5.0 V) Rise Time; Figure 2, (VDS = 12 V, VGS = 5.0 V) http://onsemi.com 4 ns ns NUD3160, SZNUD3160 TYPICAL WAVEFORMS (TJ = 25C unless otherwise specified) VIH Vin 50% 0V tPHL tPLH VOH 90% Vout 50% 10% VOL tr tf Figure 2. Switching Waveforms tr Load Dump Pulse Not Suppressed: Vr = 13.5 V Nominal 10% VS = 60 V Nominal 10% T = 300 ms Nominal 10% tr = 1 - 10 ms 10% 90% 10% of Peak; Reference = Vr, Ir 10% Vr, Ir Figure 3. Load Dump Waveform Definition http://onsemi.com 5 VS T NUD3160, SZNUD3160 TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise specified) 80 VDS = 60 V 70 IGSS GATE LEAKAGE (mA) IDSS, DRAIN LEAKAGE (mA) 80 60 50 40 30 20 10 0 -50 -25 0 25 50 100 75 VGS = 5 V 50 40 VGS = 3 V 30 -25 1E+03 ID = 10 mA 65.6 65.4 65.2 65.0 -25 0 25 75 50 100 VGS = 5 V VGS = 2 V 1E+01 1E+00 1E-01 VGS = 1.5 V 1E-02 1E-03 0.0 125 0.01 0.001 125 C 1E-05 1.4 -40 C 1.6 1.8 2.0 2.2 2.4 VGS, GATE-TO-SOURCE VOLTAGE (V) RDS(ON), DRAIN-TO-SOURCE RESISTANCE (mW) ID DRAIN CURRENT (mA) VDS = 0.8 V 1.2 0.3 0.4 0.5 0.6 0.7 0.8 Figure 7. Output Characteristics 1 25 C 0.2 0.1 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6. Breakdown Voltage vs. Junction Temperature 85 C 125 VGS = 2.5 V VGS = 3 V 1E+02 TJ, JUNCTION TEMPERATURE (C) 1E-07 1.0 100 75 Figure 5. Gate-to-Source Leakage vs. Junction Temperature 65.8 1E-06 50 Figure 4. Drain-to-Source Leakage vs. Junction Temperature 66.0 1E-04 25 TJ, JUNCTION TEMPERATURE (C) 66.2 0.1 0 TJ, JUNCTION TEMPERATURE (C) ID DRAIN CURRENT (mA) BVDSS BREAKDOWN VOLTAGE (V) 60 20 -50 125 66.4 64.8 -50 70 2.6 3200 ID = 0.15 A 2800 2400 VGS = 3.0 V 2000 1600 VGS = 5.0 V 1200 800 -50 Figure 8. Transfer Function -25 0 25 50 75 TJ, JUNCTION TEMPERATURE (C) Figure 9. On Resistance Variation vs Junction Temperature http://onsemi.com 6 100 125 NUD3160, SZNUD3160 TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise specified) 90 ID = 250 mA 125 C VZ ZENER CLAMP VOLTAGE (V) RDS(ON), DRAIN-TO-SOURCE RESISTANCE (mW) 100 80 70 60 85 C 50 25 C 40 30 -40 C 20 10 0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 68.0 67.5 67.0 66.5 -40 C 66.0 65.5 25 C 85 C 65.0 64.5 64.0 63.5 63.0 62.5 62.0 0.1 125 C 1.0 VGS, GATE-TO-SOURCE VOLTAGE (V) 10 100 1000 IZ, ZENER CURRENT (mA) Figure 11. Zener Clamp Voltage vs. Zener Current Figure 10. On Resistance Variation vs. Gate-to-Source Voltage 100 600 SC74-1 (One Device Powered) qJA (C/W) POWER (WATTS) SC74-2 (Both Devices Powered Equally) 500 10 SC74-1 400 SOT23 300 1 0.1 1.0 10 200 100 SC74-2 1 oz. Copper, Single-sided Board 0 100 200 300 400 500 600 PW, PULSE WIDTH (ms) COPPER AREA (mm2) Figure 12. Maximum Non-repetitive Surge Power vs. Pulse Width Figure 13. Thermal Performance vs. Board Copper Area http://onsemi.com 7 700 NUD3160, SZNUD3160 APPLICATIONS INFORMATION 12 V Battery - + NC NO Relay, Vibrator, or Inductive Load Drain (3) Gate (1) Micro Processor Signal for Relay 10 k 100 K NUD3160 Source (2) Figure 14. Applications Diagram http://onsemi.com 8 NUD3160, SZNUD3160 PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 9 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 NUD3160, SZNUD3160 PACKAGE DIMENSIONS SC-74 CASE 318F-05 ISSUE M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318F-01, -02, -03, -04 OBSOLETE. NEW STANDARD 318F-05. D 6 HE 1 5 4 2 3 E b e C A 0.05 (0.002) q L A1 DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0 MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.37 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10 - MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0 INCHES NOM 0.039 0.002 0.015 0.007 0.118 0.059 0.037 0.016 0.108 - MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10 STYLE 7: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 SOLDERING FOOTPRINT* 2.4 0.094 0.95 0.037 1.9 0.074 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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