Rev. A, June 2003
FQP9N50C/FQPF9N50C
©2003 Fairchild Semiconductor Corporation
Electrical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 8 mH, IAS = 9A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 9A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Symbol Parame ter Test Condit i ons Min Typ Max Units
Off Characteristics
BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = 250 µA500 -- -- V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C -- 0.57 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- -- 1 µA
VDS = 400 V, TC = 125°C -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteri st ics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0 -- 4.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 4.5 A -- 0.65 0.8 Ω
gFS Forward Transconductance VDS = 40 V, ID = 4.5 A (Note 4) -- 6.5 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 790 1030 pF
Coss Output Capacitance -- 130 170 pF
Crss Reverse Transfer Capacitance -- 24 30 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 250 V, ID = 9 A,
RG = 25 Ω
(Note 4, 5)
-- 18 45 ns
trTurn-On Rise Time -- 65 140 ns
td(off) Turn-Off D e l a y Time -- 93 195 ns
tfTurn -Off Fa ll Time -- 64 125 ns
QgTotal Gate Ch arge VDS = 400 V, ID = 9 A,
VGS = 10 V
(Note 4, 5)
-- 28 35 nC
Qgs Gate-Source Charge -- 4 -- nC
Qgd Gate-Drain Charge -- 15 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 9 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 36 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, I S = 9 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, I S = 9 A,
dIF / dt = 100 A/µs (Note 4)
-- 335 -- ns
Qrr Reverse Recovery Charge -- 2.95 - - µC