Document Number: 94282 For technical questions, contact: diodes-tech@vishay.com www.vishay.com
Revision: 29-Apr-09 1
Schottky Diode, 0.5 A
MBR0530PbF
Vishay High Power Products
FEATURES
• Surface mountable
• Very low forward voltage drop
• Extremely fast switching
• Negligible switching losses
• Guard ring for enhanced ruggedness and long term
reliability
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
This Schottky diode is ideally suited for low voltage,
high frequency operations, as freewheeling and polarity
protection. Small size of the package allows proper use in
application where compact size is critical, fitting also the
GSM and PCMCIA requirement.
PRODUCT SUMMARY
IF(AV) 0.5 A
VR30 V
VF at 0.5 A at 25 °C 0.430 V
21
(A) (K)
SOD-123
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) DC 0.5 A
VRRM 30 V
IFSM tp = 10 ms sine 10 A
VF0.5 Apk, TJ = 100 °C 0.35 V
TJRange - 65 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL MBR0530PbF UNITS
Maximum DC reverse voltage VR30 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Forward current IFDC, TL = 126 °C 0.5
A
Maximum peak one cycle
non-repetitive surge current
at TJ = 25 °C
IFSM
5 µs sine or 3 µs rect. pulse Following any rated
load condition and with
rated VRRM applied
75
10 ms sine or 6 ms rect. pulse 10
www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 94282
2Revision: 29-Apr-09
MBR0530PbF
Vishay High Power Products Schottky Diode, 0.5 A
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
Note
(1) thermal runaway condition for a diode on its own heatsink
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop VFM (1)
0.1 A TJ = 25 °C 0.375
V
0.5 A 0.430
0.1 A TJ = 125 °C 0.250
0.5 A 0.350
Maximum reverse leakage current IRM (1) VR = 15 V TJ = 25 °C 20 µA
VR = 30 V 130
Maximum junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) TJ = 25 °C 90 pF
Maximum voltage rate of change dV/dt Rated VR10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ (1), TStg - 65 to 150 °C
Maximum thermal resistance,
junction to lead RthJL Mounted on PC board FR4 with minimum pad size 150
°C/W
Maximum thermal resistance,
junction to ambient RthJA 1" square pad size (1 x 0.5" for each lead) on FR4 board 200
Approximate weight 0.012 g
Marking device Case style SOD-123 BYWLC
dPtot
dTJ
------------- 1
RthJA
--------------<
Document Number: 94282 For technical questions, contact: diodes-tech@vishay.com www.vishay.com
Revision: 29-Apr-09 3
MBR0530PbF
Schottky Diode, 0.5 A Vishay High Power Products
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage (Per Leg)
Fig. 4 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: TC = TJ - Pd x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 4)
I
F
- Instantaneous
Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.1 0.2 0.3 0.4 0.5 0.6 0.70
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
0.01
10
1.0
0.1
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
10515202530
0
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
0.0001
100
1.0
10
0.001
0.01
0.1
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
105 152025300
10
1000
100 TJ = 25 °C
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
0.4
0.2 0.6 0.80
DC
See note (1)
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
Square wave
80
90
160
140
150
110
100
120
130
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0.2 0.4 0.80.60
DC
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
0
0.3
0.2
0.1
IFSM - Non-Repetitive Surge Current (A)
tp - Square Wave Pulse Duration (µs)
100 1000 10 00010
At any rated load condition
and with rated VRRM applied
following surge
1
100
10
www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 94282
4Revision: 29-Apr-09
MBR0530PbF
Vishay High Power Products Schottky Diode, 0.5 A
ORDERING INFORMATION TABLE
DEVICE PACKAGE MARKING BASE QUANTITY DELIVERY MODE
MBR0530 SOD-123 BYWLC 3000 Tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95053
Part marking information www.vishay.com/doc?95338
Packaging information www.vishay.com/doc?95061
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
Disclaimer
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Vishay
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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