MOTOROU
SEMICONDUCTOR TECHNICAL DATA Orderthls document
by 2N3501JANID
2N3501JAN, JTX, JTXV, JANS
Processed per MIL4-195001366
NPN Silicon
SmallSignal Transistors
..designed for genera~urpose switching and amplifier applications in hig~voltage
.,,!.\ ,7.,
ELECTRICAL CH~@CTE~lSTIB ~A. 25°C unlessothemise noted.)
‘t$p>,’’’:$$’ Charsadstlc Symbol Mln MU Unit
M
OFF CWRA~,w’OS
Colleotor@*r~re*dow Voltage(l) V(BR)CEO
(iC+=\~,@&, IB =O) Vdc
150
Co+ase Br+doM Voltage V(BR)CBO Vdc
~~~$lo ~do, [E =O) 150
E’kier=ese Bre&dom Voltage V(BR)EBO 6.0
(iE=lO@dO,lC=O) @dc
Collector Cutoff Current ICBO ~dc
~CB =75 Vdc) 0.05
@TA =150°C
~CB =75 Vdo) 50
Emittsr Cutoff Cument iEBO 0.025 @dc
WEB =4.0 Vdo, IC =O)
aRW O
9/93
@MO=ROLA
@Motorola,IK. 1994
ELECTRICAL CHARACTERISTICS ~A. 25°C unless othetise noted,)
Charaotetietfc Symbol Mln M= Unit
ON CHARACTERISTICS(1)
DC Current Gain
(tc=0.1 rnA&, VCE =10 V*)
(tc=1.0 tik, VCE =10 VA)
(tc-lo~dO,vcE-lov&)
([c =150 mA&, VCE =10 V&)
(1c =300 titi, VCE =10 V*)
(1c=150 mAdc, VCE =10 Vdc, TA =+“C)
Collector-EmMer Satumtion Voltage
(lC=lOtidO,[B=l.OtidO)
(IC =150 titi, !B =15 mAdc)
Baa&Emitter Saturation VoMge
(tc =10,rnA&, iB =1.0 ti&)
(tc =150 mAdc, !B =15 rnAdc)
hFE
vcE(sat)
vBE(~at)
35
50
75
100
20
I
.. ...
ASSURANCE TEST~~~.~~Post BumAn)
Burn4n Conditiq~,@$~~#30 k5°C, VCB1OOVdc 2N3501, (30 Vdc JANS), PD =1.0 W
~’.*’,\+?+$%
~..>?:$
t,*efltia Tested Inltlal and End Point Limits
Symbol Unit
+$~f,
>,.,,i-.:.~Mln M=
Colld~*~kuwent {CBO
N@’@14Nk) nAdc
50
D&~W~t Gain(l) hFE
(l@,=150 tik, VCE =10 Vdo)
100 300
DaIts from PrMurn4n Measured Values Mln Max
Delta CollWr Cutoff Current AIcBO *1OO %of Initial Value
or H.O nAdc
whichever is greater
Delta DC Current Gain(l) AhFE *15 %of Initial Value
(1) Pulsd. Pulse Width 250 to 350 W, D@ Qcle 1,0 to 2.0%.
COMMERCIAL PLUS AND MIUAERO SMALL SIGNAL TRANSISTOR DATA
3+6
-”
intentionally left blank.
2N3501
SERIES
PACKAGE DIMENSIONS
\+I
fOS(0.014)
@
ITI
A@
1
H@]
SrnEI
SMEB:
PIN 1.
SOURCE
3.
MmE
3.
tAtlNlERM.2
SlYLE
11:
PIN 1. ANODE
2oFm
3.
CATHODE
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w~=w=W
the
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II operating parameters, including
cTypicals”
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2N3501
JAN/D