DATA SH EET
Product specification
Supersedes data of 1999 Apr 23 2002 Feb 04
DISCRETE SEMICONDUCTORS
BC846; BC847; BC848
NPN general purpose transistors
b
ook, halfpage
M3D088
2002 Feb 04 2
Philips Semiconductors Product specification
NPN general purpose transistors BC846; BC847; BC848
FEATURES
Low current (max. 100 mA)
Low voltage (max. 65 V).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complements: BC856, BC857 and BC858.
MARKING
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
PINNING
TYPE NUMBER MARKING CODE(1)
BC846 1D*
BC846A 1A*
BC846B 1B*
BC847 1H*
BC847A 1E*
BC847B 1F*
BC847C 1G*
BC848B 1K*
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
21
3
MAM255
Top view
2
3
1
Fig.1 Simplified outline (SOT23) and symbol.
2002 Feb 04 3
Philips Semiconductors Product specification
NPN general purpose transistors BC846; BC847; BC848
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BC846 80 V
BC847 50 V
BC848 30 V
VCEO collector-emitter voltage open base
BC846 65 V
BC847 45 V
BC848 30 V
VEBO emitter-base voltage open collector
BC846; BC847 6V
BC848 5V
I
Ccollector current (DC) 100 mA
ICM peak collector current 200 mA
IBM peak base current 200 mA
Ptot total power dissipation Tamb 25 °C; note 1 250 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to
ambient in free air; note 1 500 K/W
2002 Feb 04 4
Philips Semiconductors Product specification
NPN general purpose transistors BC846; BC847; BC848
CHARACTERISTICS
Tamb =25°C; unless otherwise specified.
Note
1. Pulse test: tp300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector-base cut-off current VCB =30V; I
E=0 −−15 nA
VCB =30V; I
E=0;
T
j= 150 °C−−5µA
I
EBO emitter-base cut-off current VEB =5V; I
C=0 −−100 nA
hFE DC current gain IC=10µA; VCE =5V
BC846A; BC847A 90
BC846B; BC847B; BC848B 150
BC847C 270
DC current gain IC= 2 mA; VCE =5V
BC846 110 450
BC847 110 800
BC846A; BC847A 110 180 220
BC846B; BC847B; BC848B 200 290 450
BC847C 420 520 800
VCEsat collector-emitter saturation voltage IC= 10 mA; IB= 0.5 mA 90 250 mV
IC= 100 mA; IB= 5 mA;
note 1 200 600 mV
VBEsat base-emitter saturation voltage IC= 10 mA; IB= 0.5 mA 700 mV
IC= 100 mA; IB= 5 mA;
note 1 900 mV
VBE base-emitter voltage IC= 2 mA; VCE = 5 V 580 660 700 mV
IC= 10 mA; VCE =5V −−770 mV
Cccollector capacitance VCB =10V; I
E=I
e=0;
f = 1 MHz 2.5 pF
fTtransition frequency VCE =5V; I
C=10mA;
f = 100 MHz 100 −−MHz
F noise figure IC= 200 µA; VCE =5V;
R
S=2k; f = 1 kHz;
B = 200 Hz
210dB
2002 Feb 04 5
Philips Semiconductors Product specification
NPN general purpose transistors BC846; BC847; BC848
handbook, halfpage
MGT723
10111010
2103
IC (mA)
0
400
300
200
100
hFE
(1)
(2)
(3)
Fig.2 DC current gain as a function of collector
current; typical values.
BC846A; VCE =5V.
(1) Tamb = 150 °C.
(2) Tamb =25°C.
(3) Tamb =55 °C.
handbook, halfpage
MGT724
10111010
2103
IC (mA)
0
1200
1000
800
600
400
200
VBE
(mV)
(1)
(2)
(3)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
BC846A; VCE =5V.
(1) Tamb =55 °C.
(2) Tamb =25°C.
(3) Tamb = 150 °C.
handbook, halfpage
103
102
10
MGT725
10111010
2103
IC (mA)
VCEsat
(mV)
(1)
(2)
(3)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
BC846A; IC/IB= 20.
(1) Tamb = 150 °C.
(2) Tamb =25°C.
(3) Tamb =55 °C.
handbook, halfpage
MGT726
10111010
2103
IC (mA)
0
1200
1000
800
600
400
200
VBEsat
(mV)
(1)
(2)
(3)
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
BC846A; IC/IB= 10.
(1) Tamb =55 °C.
(2) Tamb =25°C.
(3) Tamb = 150 °C.
2002 Feb 04 6
Philips Semiconductors Product specification
NPN general purpose transistors BC846; BC847; BC848
handbook, halfpage
MGT727
10111010
2103
IC (mA)
0
600
500
400
300
200
100
hFE (1)
(2)
(3)
Fig.6 DC current gain as a function of collector
current; typical values.
BC847B; VCE =5V.
(1) Tamb = 150 °C.
(2) Tamb =25°C.
(3) Tamb =55 °C.
handbook, halfpage
0
1200
1000
800
600
400
200
MGT728
10210111010
2103
IC (mA)
VBE
(mV)
(1)
(2)
(3)
Fig.7 Base-emitter voltage as a function of
collector current; typical values.
BC847B; VCE =5V.
(1) Tamb =55 °C.
(2) Tamb =25°C.
(3) Tamb = 150 °C.
handbook, halfpage
104
103
102
10
MGT729
10111010
2103
IC (mA)
VCEsat
(mV)
(1)
(2)
(3)
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
BC847B; IC/IB= 20.
(1) Tamb = 150 °C.
(2) Tamb =25°C.
(3) Tamb =55 °C.
handbook, halfpage
MGT730
10111010
2103
IC (mA)
0
1200
1000
800
600
400
200
VBEsat
(mV)
(1)
(2)
(3)
Fig.9 Base-emitter saturation voltage as a
function of collector current; typical values.
BC847B; IC/IB= 10.
(1) Tamb =55 °C.
(2) Tamb =25°C.
(3) Tamb = 150 °C.
2002 Feb 04 7
Philips Semiconductors Product specification
NPN general purpose transistors BC846; BC847; BC848
handbook, halfpage
MGT731
10111010
2103
IC (mA)
0
1200
1000
800
600
400
200
hFE
(1)
(2)
(3)
Fig.10 DC current gain as a function of collector
current; typical values.
BC847C; VCE =5V.
(1) Tamb = 150 °C.
(2) Tamb =25°C.
(3) Tamb =55 °C.
handbook, halfpage
0
1200
1000
800
600
400
200
MGT732
10210111010
2103
IC (mA)
VBE
(mV)
(1)
(2)
(3)
Fig.11 Base-emitter voltage as a function of
collector current; typical values.
BC847C; VCE =5V.
(1) Tamb =55 °C.
(2) Tamb =25°C.
(3) Tamb = 150 °C.
handbook, halfpage
104
103
102
10
MGT733
10111010
2103
IC (mA)
VCEsat
(mV)
(1)
(2)(3)
Fig.12 Collector-emitter saturation voltage as a
function of collector current; typical values.
BC847C; IC/IB= 20.
(1) Tamb = 150 °C.
(2) Tamb =25°C.
(3) Tamb =55 °C.
handbook, halfpage
MGT734
10111010
2103
IC (mA)
0
1200
1000
800
600
400
200
VBEsat
(mV)
(1)
(2)
(3)
Fig.13 Base-emitter saturation voltage as a
function of collector current; typical values.
BC847C; IC/IB= 10.
(1) Tamb =55 °C.
(2) Tamb =25°C.
(3) Tamb = 150 °C.
2002 Feb 04 8
Philips Semiconductors Product specification
NPN general purpose transistors BC846; BC847; BC848
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
99-09-13
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
2002 Feb 04 9
Philips Semiconductors Product specification
NPN general purpose transistors BC846; BC847; BC848
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS(1) PRODUCT
STATUS(2) DEFINITIONS
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuch applicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuse of anyoftheseproducts,conveysnolicence or title
under any patent, copyright, or mask work right to these
products,andmakesnorepresentations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2002 Feb 04 10
Philips Semiconductors Product specification
NPN general purpose transistors BC846; BC847; BC848
NOTES
2002 Feb 04 11
Philips Semiconductors Product specification
NPN general purpose transistors BC846; BC847; BC848
NOTES
© Koninklijke Philips Electronics N.V. 2002 SCA74
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Printed in The Netherlands 613514/04/pp12 Date of release: 2002 Feb 04 Document order number: 9397 750 09165