BC847ATRL13 - NXP - Datasheet.Cloud

DATA SH EET

Product speciﬁcation

Supersedes data of 1999 Apr 23 2002 Feb 04

DISCRETE SEMICONDUCTORS

BC846; BC847; BC848

NPN general purpose transistors

ook, halfpage

M3D088

2002 Feb 04 2

Philips Semiconductors Product speciﬁcation

NPN general purpose transistors BC846; BC847; BC848

FEATURES

•Low current (max. 100 mA)

•Low voltage (max. 65 V).

APPLICATIONS

•General purpose switching and amplification.

DESCRIPTION

NPN transistor in a SOT23 plastic package.

PNP complements: BC856, BC857 and BC858.

MARKING

Note

1. * = p: made in Hong Kong.

* = t: made in Malaysia.

PINNING

TYPE NUMBER MARKING CODE(1)

BC846 1D*

BC846A 1A*

BC846B 1B*

BC847 1H*

BC847A 1E*

BC847B 1F*

BC847C 1G*

BC848B 1K*

PIN DESCRIPTION

1 base

2 emitter

3 collector

handbook, halfpage

MAM255

Top view

Fig.1 Simplified outline (SOT23) and symbol.

2002 Feb 04 3

Philips Semiconductors Product speciﬁcation

NPN general purpose transistors BC846; BC847; BC848

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 60134).

Note

1. Transistor mounted on an FR4 printed-circuit board, standard footprint.

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board, standard footprint.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter

BC846 −80 V

BC847 −50 V

BC848 −30 V

VCEO collector-emitter voltage open base

BC846 −65 V

BC847 −45 V

BC848 −30 V

VEBO emitter-base voltage open collector

BC846; BC847 −6V

BC848 −5V

Ccollector current (DC) −100 mA

ICM peak collector current −200 mA

IBM peak base current −200 mA

Ptot total power dissipation Tamb ≤25 °C; note 1 −250 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to

ambient in free air; note 1 500 K/W

2002 Feb 04 4

Philips Semiconductors Product speciﬁcation

NPN general purpose transistors BC846; BC847; BC848

CHARACTERISTICS

Tamb =25°C; unless otherwise speciﬁed.

Note

1. Pulse test: tp≤300 µs; δ≤0.02.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector-base cut-off current VCB =30V; I

E=0 −−15 nA

VCB =30V; I

E=0;

j= 150 °C−−5µA

EBO emitter-base cut-off current VEB =5V; I

C=0 −−100 nA

hFE DC current gain IC=10µA; VCE =5V

BC846A; BC847A −90 −

BC846B; BC847B; BC848B −150 −

BC847C −270 −

DC current gain IC= 2 mA; VCE =5V

BC846 110 −450

BC847 110 −800

BC846A; BC847A 110 180 220

BC846B; BC847B; BC848B 200 290 450

BC847C 420 520 800

VCEsat collector-emitter saturation voltage IC= 10 mA; IB= 0.5 mA −90 250 mV

IC= 100 mA; IB= 5 mA;

note 1 −200 600 mV

VBEsat base-emitter saturation voltage IC= 10 mA; IB= 0.5 mA −700 −mV

IC= 100 mA; IB= 5 mA;

note 1 −900 −mV

VBE base-emitter voltage IC= 2 mA; VCE = 5 V 580 660 700 mV

IC= 10 mA; VCE =5V −−770 mV

Cccollector capacitance VCB =10V; I

E=I

e=0;

f = 1 MHz −2.5 −pF

fTtransition frequency VCE =5V; I

C=10mA;

f = 100 MHz 100 −−MHz

F noise ﬁgure IC= 200 µA; VCE =5V;

S=2kΩ; f = 1 kHz;

B = 200 Hz

−210dB

2002 Feb 04 5

Philips Semiconductors Product speciﬁcation

NPN general purpose transistors BC846; BC847; BC848

handbook, halfpage

MGT723

10−111010

2103

IC (mA)

400

300

200

100

hFE

(1)

(2)

(3)

Fig.2 DC current gain as a function of collector

current; typical values.

BC846A; VCE =5V.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

MGT724

10−111010

2103

IC (mA)

1200

1000

800

600

400

200

VBE

(mV)

(1)

(2)

(3)

Fig.3 Base-emitter voltage as a function of

collector current; typical values.

BC846A; VCE =5V.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

handbook, halfpage

103

102

MGT725

10−111010

2103

IC (mA)

VCEsat

(mV)

(1)

(2)

(3)

Fig.4 Collector-emitter saturation voltage as a

function of collector current; typical values.

BC846A; IC/IB= 20.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

MGT726

10−111010

2103

IC (mA)

1200

1000

800

600

400

200

VBEsat

(mV)

(1)

(2)

(3)

Fig.5 Base-emitter saturation voltage as a

function of collector current; typical values.

BC846A; IC/IB= 10.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

2002 Feb 04 6

Philips Semiconductors Product speciﬁcation

NPN general purpose transistors BC846; BC847; BC848

handbook, halfpage

MGT727

10−111010

2103

IC (mA)

600

500

400

300

200

100

hFE (1)

(2)

(3)

Fig.6 DC current gain as a function of collector

current; typical values.

BC847B; VCE =5V.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

1200

1000

800

600

400

200

MGT728

10−210−111010

2103

IC (mA)

VBE

(mV)

(1)

(2)

(3)

Fig.7 Base-emitter voltage as a function of

collector current; typical values.

BC847B; VCE =5V.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

handbook, halfpage

104

103

102

MGT729

10−111010

2103

IC (mA)

VCEsat

(mV)

(1)

(2)

(3)

Fig.8 Collector-emitter saturation voltage as a

function of collector current; typical values.

BC847B; IC/IB= 20.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

MGT730

10−111010

2103

IC (mA)

1200

1000

800

600

400

200

VBEsat

(mV)

(1)

(2)

(3)

Fig.9 Base-emitter saturation voltage as a

function of collector current; typical values.

BC847B; IC/IB= 10.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

2002 Feb 04 7

Philips Semiconductors Product speciﬁcation

NPN general purpose transistors BC846; BC847; BC848

handbook, halfpage

MGT731

10−111010

2103

IC (mA)

1200

1000

800

600

400

200

hFE

(1)

(2)

(3)

Fig.10 DC current gain as a function of collector

current; typical values.

BC847C; VCE =5V.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

1200

1000

800

600

400

200

MGT732

10−210−111010

2103

IC (mA)

VBE

(mV)

(1)

(2)

(3)

Fig.11 Base-emitter voltage as a function of

collector current; typical values.

BC847C; VCE =5V.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

handbook, halfpage

104

103

102

MGT733

10−111010

2103

IC (mA)

VCEsat

(mV)

(1)

(2)(3)

Fig.12 Collector-emitter saturation voltage as a

function of collector current; typical values.

BC847C; IC/IB= 20.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

MGT734

10−111010

2103

IC (mA)

1200

1000

800

600

400

200

VBEsat

(mV)

(1)

(2)

(3)

Fig.13 Base-emitter saturation voltage as a

function of collector current; typical values.

BC847C; IC/IB= 10.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

2002 Feb 04 8

Philips Semiconductors Product speciﬁcation

NPN general purpose transistors BC846; BC847; BC848

PACKAGE OUTLINE

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

97-02-28

99-09-13

IEC JEDEC EIAJ

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface mounted package; 3 leads SOT23

2002 Feb 04 9

Philips Semiconductors Product speciﬁcation

NPN general purpose transistors BC846; BC847; BC848

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

DATA SHEET STATUS(1) PRODUCT

STATUS(2) DEFINITIONS

Objective data Development This data sheet contains data from the objective speciﬁcation for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

Product data Production This data sheet contains data from the product speciﬁcation. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Changes will be

communicated according to the Customer Product/Process Change

Notiﬁcation (CPCN) procedure SNW-SQ-650A.

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseoratanyotherconditionsabovethosegiveninthe

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarrantythatsuch applicationswillbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomersusingorselling theseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes, without notice, in the

products, including circuits, standard cells, and/or

software, described or contained herein in order to

improve design and/or performance. Philips

Semiconductors assumes no responsibility or liability for

theuse of anyoftheseproducts,conveysnolicence or title

under any patent, copyright, or mask work right to these

products,andmakesnorepresentations or warranties that

these products are free from patent, copyright, or mask

work right infringement, unless otherwise specified.

2002 Feb 04 10

Philips Semiconductors Product speciﬁcation

NPN general purpose transistors BC846; BC847; BC848

NOTES

2002 Feb 04 11

Philips Semiconductors Product speciﬁcation

NPN general purpose transistors BC846; BC847; BC848

NOTES

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Printed in The Netherlands 613514/04/pp12 Date of release: 2002 Feb 04 Document order number: 9397 750 09165