IRF1404S/L
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
ISD ≤ 95A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
Starting TJ = 25°C, L = 0.12mH
RG = 25Ω, IAS = 95A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)
––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 95A, VGS = 0V
trr Reverse Recovery Time ––– 71 110 ns TJ = 25°C, IF = 95A
Qrr Reverse RecoveryCharge ––– 180 270 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
162
650 A
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 –– – ––– V VGS = 0V, I D = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient –– – 0.036 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 0.0035 0.004 ΩVGS = 10V, ID = 95A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = 10V, ID = 250µA
gfs Forward Transconductance 106 ––– ––– S VDS = 25V, ID = 60A
––– ––– 20 µA VDS = 40V, VGS = 0V
––– ––– 250 VDS = 32V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -20V
QgTotal Gate Charge –– – 160 2 0 0 ID = 95A
Qgs Gate-to-Source Charge ––– 35 – –– nC VDS = 32V
Qgd Gate-to-Drain ("Miller") Charge ––– 42 60 VGS = 10V
td(on) Turn-On Delay Time ––– 17 ––– VDD = 20V
trRise Time ––– 140 ––– ID = 95A
td(off) Turn-Off Delay Time ––– 72 ––– RG = 2.5 Ω
tfFall Time ––– 26 ––– RD = 0.21Ω
Between lead,
and center of die contact
Ciss Input Capacitance ––– 7360 ––– VGS = 0V
Coss Output Capacitance ––– 1680 ––– VDS = 25V
Crss Reverse Transfer Capacitance –– – 24 0 ––– pF ƒ = 1.0MHz, See Fig. 5
Coss Output Capacitance ––– 6630 ––– VGS = 0V, V DS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 1490 ––– VGS = 0V, VDS = 32V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 1540 ––– VGS = 0V, VDS = 0V to 32V
IGSS
ns
IDSS Drain-to-Source Leakage Current
nH
7.5
LSInternal Source Inductance ––– –––
Use IRF1404 data and test conditions.
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.