© 2012 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSX TJ= 25°C to 150°C 1700 V
VDGX TJ= 25°C to 150°C, RGS = 1MΩ 1700 V
VGSX Continuous ±20 V
VGSM Transient ±30 V
PDTC= 25°C 568 W
TJ- 55 ... +150 °C
TJM 150 °C
Tstg - 55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-247) 1.13 / 10 Nm/lb.in.
Weight TO-268 4 g
TO-247 6 g
DS100418B(02/12)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSX VGS = - 5V, ID = 250μA 1700 V
VGS(off) VDS = 25V, ID = 250μA - 2.0 - 4.0 V
IGSX VGS = ±20V, VDS = 0V ±100 nA
IDSX(off) VDS = VDSX, VGS = - 5V 25 μA
TJ = 125°C 500 μA
RDS(on) VGS = 0V, ID = 1A, Note 1 6.5 Ω
ID(on) VGS = 0V, VDS = 50V, Note 1 2 A
Depletion Mode
MOSFETs
N-Channel
IXTT2N170D2
IXTH2N170D2
VDSX = 1700V
ID(on) > 2A
RDS(on) ≤≤
≤≤
≤ 6.5ΩΩ
ΩΩ
Ω
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0
Flammability Classification
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Audio Amplifiers
• Start-Up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXTH)
G
SD (Tab)
D
TO-268 (IXTT)
S
G
D (Tab)
IXTT2N170D2
IXTH2N170D2
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 30V, ID = 1A, Note 1 1.4 2.2 S
Ciss 3650 pF
Coss VGS = -10V, VDS = 25V, f = 1MHz 206 pF
Crss 80 pF
td(on) 28 ns
tr 58 ns
td(off) 33 ns
tf 106 ns
Qg(on) 110 nC
Qgs VGS = +5V, VDS = 850V, ID = 1A 12 nC
Qgd 60 nC
RthJC 0.22 °C/W
RthCS TO-247 0.21 °C/W
Safe-Operating-Area Specification
Characteristic Values
Symbol Test Conditions Min. Typ. Max.
SOA VDS = 1700V, ID = 120mA, TC = 75°C, Tp = 5s 204 W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
VSD IF = 2A, VGS = -10V, Note 1 0.75 1.30 V
trr 2.8 μs
IRM 45.0 A
QRM 63.0 μC
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Resistive Switching Times
VGS = ±5V, VDS = 850V, ID = 1A
RG = 2Ω (External)
IF = 2A, -di/dt = 100A/μs
VR = 100V, VGS = -10V
TO-247 Outline
Terminals: 1 - Gate 2 - Drain
3 - Source
TO-268 Outline
Terminals: 1 - Gate 2,4 - Drain
3 - Source
e
∅ P
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
© 2012 IXYS CORPORATION, All Rights Reserved
Fi g . 1. Ou tp u t C h ar a cter i sti cs @ T
J
= 25ºC
0
0.5
1
1.5
2
01234567891011
V
DS
- Volts
I
D
- Amperes
V
GS
= 5V
1V
- 2V
-1.5V
- 0.5V
-1V
0V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
- 0.5V
-1V
V
GS
= 5V
1V
0V
-1.5V
0.5V
Fi g . 3. Ou tp u t C h ar a cter i sti cs @ T
J
= 125ºC
0
0.5
1
1.5
2
0 4 8 12 16 20 24 28
V
DS
- Volts
I
D
- Amperes
-1V
-1.5V
- 2V
V
GS
= 5V
0V
- 0.5V
Fig. 4. Drain Current @ T
J
= 25ºC
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
0 102030405060708090
V
DS
- Volts
I
D
- Amperes
V
GS
= - 0.6V
- 1.2V
- 0.8V
- 1.0V
- 1.4V
- 1.6V
- 1.8V
- 2.0V
Fig. 5. Drain Current @ T
J
= 100ºC
1.E-02
1.E-01
1.E+00
1.E+01
0 102030405060708090
V
DS
- Volts
I
D
- Amperes
V
GS
= - 0.8V
- 1.2V
- 1.4V
- 1.6V
- 1.8V
- 2.0V
- 1.0V
Fi g . 6. D yn a mic R e si stan ce vs. Gat e Vo l tage
100
1,000
10,000
100,000
-2.0 -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6
V
GS
- Volts
R
O
- Ohms
T
J
= 25ºC
T
J
= 100ºC
∆V
DS
= 70V - 30V
IXTT2N170D2
IXTH2N170D2
IXTT2N170D2
IXTH2N170D2
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 8. Normalized RDS(on) vs. J u n cti o n Temper atur e
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 0V
I
D
= 1A
Fig. 9. RDS(on) N or mal i z ed to I D = 1A Value
vs. D rai n Cu r ren t
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0 0.5 1 1.5 2 2.5 3 3.5 4
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 0V
5V - - - -
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Input Admittance
0
0.5
1
1.5
2
2.5
3
-3 -2.5 -2 -1.5 -1 -0.5 0
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
V
DS
= 30V
Fig. 11. T ransconductan ce
0
1
2
3
4
5
0 0.5 1 1.5 2 2.5 3 3.5
I
D
- Amperes
g
f s - Siemens
T
J
= - 40ºCV
DS
= 30V
25ºC
125ºC
Fi g. 12. N o r mal i z e d B r eakd own a n d Thr es h o l d
Vol tages vs. Ju n c ti o n Temper at u r e
0.8
0.9
1.0
1.1
1.2
1.3
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
BV / V
GS(off)
V
GS(off)
@ V
DS
= 25V
BV
DSX
@ V
GS
= - 5V
Fi g. 7. Dyn ami c Resi stance vs. Gate Vo l t ag e
1.E+05
1.E+06
1.E+07
1.E+08
1.E+09
1.E+10
1.E+11
-3.8 -3.6 -3.4 -3.2 -3.0 -2.8 -2.6 -2.4
V
GS
- Volts
R
O
- Ohms
T
J
= 25ºC
T
J
= 100ºC
∆V
DS
= 1300V - 300V
© 2012 IXYS CORPORATION, All Rights Reserved IXYS REF: T_2N170D2(7N) 11-29-11
Fig. 17. Maximum Transien t Thermal I mped an ce
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse W idth - Seconds
Z
(th)JC
- ºC / W
Fig. 16. Maximum T ransient Thermal Impedance
hvjv
0.4
Fig. 13. Forward Voltage Drop of Intrinsic Diode
0
1
2
3
4
5
6
0.3 0.4 0.5 0.6 0.7 0.8 0.9
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
V
GS
= -10V
T
J
= 25ºC
Fig. 15. Gate Charge
-5
-4
-3
-2
-1
0
1
2
3
4
5
0 20 40 60 80 100 120
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 850V
I
D
= 1A
I
G
= 10mA
Fig. 14. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
IXTT2N170D2
IXTH2N170D2
Fi g . 17. F o r war d -B i as Safe Op er ati n g Area
@ T
C
= 25ºC
0.1
1
10
10 100 1,000 10,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
1ms
100µs
R
DS(on)
Limit
10ms
100ms
DC
Fi g . 18. F o r war d -B i as Safe Op er ati n g Area
@ T
C
= 75ºC
0.1
1
10
10 100 1,000 10,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 75ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
100ms
DC
