ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 EcoSPARK(R) 300mJ, 400V, N-Channel Ignition IGBT General Description Formerly Developmental Type 49362 The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D-Pak (TO-252), as well as the industry standard D-Pak (TO-263), and TO-262 and TO220 plastic packages. This device is intended for use in automotive ignition circuits, specifically as a coil driver. Internal diodes provide voltage clamping without the need for external components. Applications * Automotive Ignition Coil Driver Circuits * Coil- On Plug Applications Features EcoSPARK(R) devices can be custom made to specific clamp voltages. Contact your nearest On Semiconductor sales office for more information. * Space saving D-Pak package availability * SCIS Energy = 300mJ at TJ = 25oC * Logic Level Gate Drive Package Symbol JEDEC TO-263AB D-Pak JEDEC TO-220AB E C G COLLECTOR G E R1 JEDEC TO-252AA D-Pak JEDEC TO-262AA E GATE C G R2 G EMITTER E COLLECTOR (FLANGE) Device Maximum Ratings TA = 25C unless otherwise noted Symbol BVCER Parameter Collector to Emitter Breakdown Voltage (IC = 1 mA) Ratings 430 Units V BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA) 24 V ESCIS25 At Starting TJ = 25C, ISCIS = 14.2A, L = 3.0 mHy 300 mJ ESCIS150 At Starting TJ = 150C, ISCIS = 10.6A, L = 3.0 mHy 170 mJ IC25 Collector Current Continuous, At TC = 25C, See Fig 9 21 A IC110 Collector Current Continuous, At TC = 110C, See Fig 9 17 A VGEM Gate to Emitter Voltage Continuous 10 V Power Dissipation Total TC = 25C 150 W Power Dissipation Derating TC > 25C 1.0 W/C PD TJ TSTG TL Operating Junction Temperature Range -40 to 175 C Storage Junction Temperature Range -40 to 175 C C Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) 300 Tpkg Max Lead Temp for Soldering (Package Body for 10s) 260 C ESD Electrostatic Discharge Voltage at 100pF, 1500 4 kV (c)2013 Semiconductor Components Industries, LLC. October-2017, Rev. 3 Publication Order Number: ISL9V3040P3/D Device Marking V3040D Device ISL9V3040D3ST V3040S V3040P Package TO-252AA Reel Size 330mm Tape Width 16mm Quantity 2500 ISL9V3040S3ST TO-263AB 330mm 24mm 800 ISL9V3040P3 TO-220AB Tube N/A 50 V3040S ISL9V3040S3 TO-262AA Tube N/A 50 V3040D ISL9V3040D3S TO-252AA Tube N/A 75 V3040S ISL9V3040S3S TO-263AB Tube N/A 50 Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units IC = 2mA, VGE = 0, RG = 1K, See Fig. 15 TJ = -40 to 150C 370 400 430 V IC = 10mA, VGE = 0, RG = 0, See Fig. 15 TJ = -40 to 150C 390 420 450 V IC = -75mA, VGE = 0V, TC = 25C 30 - - V IGES = 2mA 12 14 - V - - 25 A TC = 150C - - 1 mA VEC = 24V, See TC = 25C Fig. 11 TC = 150C - - 1 mA - - 40 mA - 70 - 10K - 26K Off State Characteristics BVCER Collector to Emitter Breakdown Voltage BVCES Collector to Emitter Breakdown Voltage BVECS Emitter to Collector Breakdown Voltage BVGES Gate to Emitter Breakdown Voltage ICER Collector to Emitter Leakage Current IECS Emitter to Collector Leakage Current R1 R2 Series Gate Resistance VCER = 250V, RG = 1K, See Fig. 11 TC = 25C Gate to Emitter Resistance On State Characteristics VCE(SAT) Collector to Emitter Saturation Voltage VCE(SAT) Collector to Emitter Saturation Voltage VCE(SAT) Collector to Emitter Saturation Voltage IC = 6A, VGE = 4V TC = 25C, See Fig. 3 - 1.25 1.60 V IC = 10A, VGE = 4.5V TC = 150C, See Fig. 4 - 1.58 1.80 V IC = 15A, VGE = 4.5V TC = 150C - 1.90 2.20 V - 17 - nC Dynamic Characteristics QG(ON) Gate Charge VGE(TH) Gate to Emitter Threshold Voltage VGEP Gate to Emitter Plateau Voltage IC = 10A, VCE = 12V, VGE = 5V, See Fig. 14 IC = 1.0mA, VCE = VGE, See Fig. 10 TC = 25C TC = 150C IC = 10A, VCE = 12V 1.3 - 2.2 V 0.75 - 1.8 V - 3.0 - V Switching Characteristics td(ON)R Current Turn-On Delay Time-Resistive td(OFF)L Current Turn-Off Delay Time-Inductive trR tfL SCIS Current Rise Time-Resistive Current Fall Time-Inductive Self Clamped Inductive Switching VCE = 14V, RL = 1, VGE = 5V, RG = 1K TJ = 25C, See Fig. 12 - 0.7 4 s - 2.1 7 s VCE = 300V, L = 500Hy, VGE = 5V, RG = 1K TJ = 25C, See Fig. 12 - 4.8 15 s - 2.8 15 s TJ = 25C, L = 3.0 mHy, RG = 1K, VGE = 5V, See Fig. 1 & 2 - - 300 mJ All packages - - 1.0 C/W Thermal Characteristics RJC Thermal Resistance Junction-Case www.onsemi.com 2 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Package Marking and Ordering Information ISCIS, INDUCTIVE SWITCHING CURRENT (A) ISCIS, INDUCTIVE SWITCHING CURRENT (A) 30 RG = 1k, VGE = 5V,Vdd = 14V 25 20 15 TJ = 25C TJ = 150C 10 5 SCIS Curves valid for Vclamp Voltages of <430V 0 0 25 75 50 100 125 150 175 30 RG = 1k, VGE = 5V,Vdd = 14V 25 20 15 TJ = 25C 10 TJ = 150C 5 SCIS Curves valid for Vclamp Voltages of <430V 0 200 0 2 4 tCLP, TIME IN CLAMP (S) VGE = 3.7V VGE = 4.0V 1.26 1.22 VGE = 4.5V 1.18 VGE = 5.0V VGE = 8.0V 1.14 -75 -50 -25 0 25 50 75 100 125 150 1.8 ICE = 10A 1.7 VGE = 3.7V VGE = 4.0V 1.6 1.5 1.4 VGE = 4.5V VGE = 5.0V 1.3 VGE = 8.0V 1.2 -75 175 -50 -25 0 TJ, JUNCTION TEMPERATURE (C) VGE = 5.0V VGE = 4.5V VGE = 4.0V VGE = 3.7V 15 10 5 TJ = - 40C 0 0 1.0 2.0 3.0 50 75 100 125 150 175 Figure 4. Collector to Emitter On-State Voltage vs Junction Temperature ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) VGE = 8.0V 20 25 TJ, JUNCTION TEMPERATURE (C) Figure 3. Collector to Emitter On-State Voltage vs Junction Temperature 25 10 Figure 2. Self Clamped Inductive Switching Current vs Inductance VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) ICE = 6A 8 L, INDUCTANCE (mHy) Figure 1. Self Clamped Inductive Switching Current vs Time in Clamp 1.30 6 25 VGE = 8.0V VGE = 5.0V 20 VGE = 4.5V VGE = 4.0V VGE = 3.7V 15 10 4.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 5 TJ = 25C 0 0 1.0 2.0 3.0 4.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. Collector to Emitter On-State Voltage vs Collector Current Figure 6. Collector to Emitter On-State Voltage vs Collector Current www.onsemi.com 3 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Typical Performance Curves VGE = 8.0V VGE = 5.0V 20 VGE = 4.5V VGE = 4.0V VGE = 3.7V 15 10 5 TJ = 175C 0 0 1.0 2.0 3.0 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 25 25 20 15 TJ = 150C 10 TJ = 25C 5 TJ = -40C 0 4.0 DUTY CYCLE < 0.5%, VCE = 5V PULSE DURATION = 250s 1.0 2.2 VTH, THRESHOLD VOLTAGE (V) 20 15 10 5 25 50 75 100 125 150 2.0 1.8 1.6 1.4 1.2 1.0 175 ICE = 1mA -50 -25 0 TC, CASE TEMPERATURE (C) 12 SWITCHING TIME (S) 100 10 VCES = 300V 25 50 75 100 125 150 175 150 8 6 175 2 TJ, JUNCTION TEMPERATURE (C) Figure 11. Leakage Current vs Junction Temperature Inductive tOFF 4 VCES = 250V 0 125 Resistive tOFF 10 1000 -25 100 75 ICE = 6.5A, VGE = 5V, RG = 1K VECS = 24V -50 50 Figure 10. Threshold Voltage vs Junction Temperature 10000 0.1 25 TJ JUNCTION TEMPERATURE (C) Figure 9. DC Collector Current vs Case Temperature 1 4.5 VCE = VGE VGE = 4.0V 0 4.0 3.5 Figure 8. Transfer Characteristics 25 LEAKAGE CURRENT (A) 3.0 2.5 VGE, GATE TO EMITTER VOLTAGE (V) Figure 7. Collector to Emitter On-State Voltage vs Collector Current ICE, DC COLLECTOR CURRENT (A) 2.0 1.5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Resistive tON 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 12. Switching Time vs Junction Temperature www.onsemi.com 4 175 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Typical Performance Curves (Continued) 8 FREQUENCY = 1 MHz VGE, GATE TO EMITTER VOLTAGE (V) C, CAPACITANCE (pF) 1600 1200 CIES 800 CRES 400 COES 6 5 0 5 10 15 20 VCE = 12V 4 3 2 VCE = 6V 1 0 0 IG(REF) = 1mA, RL = 1.25, TJ = 25C 7 25 0 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) BVCER, BREAKDOWN VOLTAGE (V) 12 16 20 24 28 32 QG, GATE CHARGE (nC) Figure 13. Capacitance vs Collector to Emitter Voltage 430 8 Figure 14. Gate Charge ICER = 10mA 425 420 TJ = - 40C TJ = 175C 415 TJ = 25C 410 405 400 395 390 10 100 1000 2000 3000 RG, SERIES GATE RESISTANCE (k) ZthJC, NORMALIZED THERMAL RESPONSE Figure 15. Breakdown Voltage vs Series Gate Resistance 100 0.5 0.2 10-1 0.1 0.05 t1 0.02 PD 0.01 t2 10-2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC SINGLE PULSE 10-3 10-6 10-5 10-4 10-3 10-2 T1, RECTANGULAR PULSE DURATION (s) Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case www.onsemi.com 5 10-1 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Typical Performance Curves (Continued) L VCE R or L C PULSE GEN RG G C RG = 1K DUT G Figure 18. tON and tOFF Switching Test Circuit BVCES VCE tP VCE L VGE 0V tP IAS C RG VDD + G VCE E Figure 17. Inductive Switching Test Circuit REQUIRED PEAK IAS + DUT 5V E VARY tP TO OBTAIN LOAD DUT - VDD E IAS 0 0.01 tAV Figure 19. Energy Test Circuit Figure 20. Energy Waveforms www.onsemi.com 6 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Test Circuit and Waveforms REV 7 March 2002 th ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 CTHERM1 th 6 2.1e -3 CTHERM2 6 5 1.4e -1 CTHERM3 5 4 7.3e -3 CTHERM4 4 3 2.1e -1 CTHERM5 3 2 1.1e -1 CTHERM6 2 tl 6.2e +6 JUNCTION RTHERM1 RTHERM1 th 6 1.2e -1 RTHERM2 6 5 1.9e -1 RTHERM3 5 4 2.2e -1 RTHERM4 4 3 6.0e -2 RTHERM5 3 2 5.8e -2 RTHERM6 2 tl 1.6e -3 CTHERM1 6 CTHERM2 RTHERM2 5 SABER Thermal Model SABER thermal model ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 template thermal_model th tl thermal_c th, tl { ctherm.ctherm1 th 6 = 2.1e -3 ctherm.ctherm2 6 5 = 1.4e -1 ctherm.ctherm3 5 4 = 7.3e -3 ctherm.ctherm4 4 3 = 2.2e -1 ctherm.ctherm5 3 2 =1.1e -1 ctherm.ctherm6 2 tl = 6.2e +6 CTHERM3 RTHERM3 4 RTHERM4 rtherm.rtherm1 th 6 = 1.2e -1 rtherm.rtherm2 6 5 = 1.9e -1 rtherm.rtherm3 5 4 = 2.2e -1 rtherm.rtherm4 4 3 = 6.0e -2 rtherm.rtherm5 3 2 = 5.8e -2 rtherm.rtherm6 2 tl = 1.6e -3 } CTHERM4 3 CTHERM5 RTHERM5 2 RTHERM6 CTHERM6 tl www.onsemi.com 7 CASE ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 SPICE Thermal Model ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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