052-6340 Rev D 6 - 2011
Absolute Maximum Ratings
Symbol Parameter Ratings Unit
Vces Collector Emitter Voltage 600 V
IC1 Continuous Collector Current @ TC = 25°C 112
A
IC2 Continuous Collector Current @ TC = 100°C 60
ICM Pulsed Collector Current 1178
VGE Gate-Emitter Voltage 2±30 V
PDTotal Power Dissipation @ TC = 25°C 356 W
SSOA Switching Safe Operating Area @ TJ = 150°C 178A @ 600V
TJ, TSTG Operating and Storage Junction Temperature Range -55 to 150 °C
Combi (IGBT and Diode)
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• High power PFC boost
• Welding
• UPS, solar, and other inverters
• High frequency, high effi ciency industrial
FEATURES
• Fast switching with low EMI
• Very Low Eoff for maximum effi ciency
• Ultra low Cres for improved noise immunity
• Low conduction loss
• Low gate charge
• Increased intrinsic gate resistance for low EMI
• RoHS compliant
APT60GA60JD60
600V
APT60GA60JD60
POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved
through leading technology silicon design and lifetime control processes. A reduced Eoff -
VCE(ON) tradeoff results in superior effi ciency compared to other IGBT technologies. Low
gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short
delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the
poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even
when switching at high frequency.
Microsemi Website - http://www.microsemi.com
High Speed PT IGBT
Static Characteristics TJ = 25°C unless otherwise specifi ed
Symbol Parameter Test Conditions Min Typ Max Unit
VBR(CES) Collector-Emitter Breakdown Voltage VGE = 0V, IC = 1.0mA 600
V
VCE(on) Collector-Emitter On Voltage VGE = 15 V,
IC = 62A
TJ = 25°C 2.0 2.5
TJ = 125°C 1.9
VGE(th) Gate Emitter Threshold Voltage VGE =VCE , IC = 2.5mA 3 4.5 6
ICES Zero Gate Voltage Collector Current VCE = 600V,
VGE = 0V
TJ = 25°C 275 A
TJ = 125°C 3000
IGES Gate-Emitter Leakage Current VGS = ±30V ±100 nA
SOT-227
IS OT OP
®
file # E145592
"UL Recognized"
GE
E
C
052-6340 Rev D 6 - 2011
Thermal and Mechanical Characteristics
Dynamic Characteristics TJ = 25°C unless otherwise specifi ed APT60GA60JD60
Symbol Characteristic Min Typ Max Unit
RJC Junction to Case Thermal Resistance (IGBT) - - .35
°C/W
RJC Junction to Case Thermal Resistance (Diode) .60
WTPackage Weight - 29.2 - g
VIsolation RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) 2500 Volts
Symbol Parameter Test Conditions Min Typ Max Unit
Cies Input Capacitance Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
8010
pF
Coes Output Capacitance 714
Cres Reverse Transfer Capacitance 74
Qg
3Total Gate Charge Gate Charge
VGE = 15V
VCE= 300V
IC = 62A
296
nC
Qge Gate-Emitter Charge 106
Qgc Gate- Collector Charge 60
SSOA Switching Safe Operating Area TJ = 150°C, RG = 4.74, VGE = 15V,
L= 100uH, VCE = 600V 178 A
td(on) Turn-On Delay Time Inductive Switching (25°C)
VCC = 400V
VGE = 15V
IC = 62A
RG = 4.74
TJ = +25°C
35
ns
trCurrent Rise Time 49
td(off) Turn-Off Delay Time 175
tfCurrent Fall Time 91
Eon2 Turn-On Switching Energy 1450 J
Eoff
6Turn-Off Switching Energy 1255
td(on) Turn-On Delay Time Inductive Switching (125°C)
VCC = 400V
VGE = 15V
IC = 62A
RG = 4.74
TJ = +125°C
33
ns
trCurrent Rise Time 49
td(off) Turn-Off Delay Time 214
tfCurrent Fall Time 119
Eon2 Turn-On Switching Energy 1995 J
Eoff
6Turn-Off Switching Energy 1760
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
3 See Mil-Std-750 Method 3471.
4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the
clamping diode.
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
052-6340 Rev D 6 - 2011
Typical Performance Curves APT60GA60JD60
0
25
50
75
100
125
25 50 75 100 125 150
0
1
2
3
4
5
0 25 50 75 100 125 150
0
2
4
6
8
10
12
14
16
0 50 100 150 200 250 300 350
0
1
2
3
4
6 8 10 12 14 16
0
25
50
75
100
125
150
175
200
0 2 4 6 8 10 12 13 14
0
50
100
150
200
250
300
350
0 4 8 12 16 20 24 28 32
0
25
50
75
100
125
150
175
200
0 1 2 3 4 5 6
250s PULSE
TEST<0.5 % DUTY
CYCLE
TJ = 25°C.
250s PULSE TEST
<0.5 % DUTY CYCLE
VGE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
IC = 31A
IC = 62A
IC = 124A
IC = 62A
IC = 124A
13V
15V
IC = 62A
TJ = 25°C
VCE = 480V
VCE = 300V
VCE = 120V
TJ= 25°C
TJ= -55°C
VGE = 15V
TJ= 55°C TJ= 150°C
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics (TJ = 25°C)
IC, COLLECTOR CURRENT (A)
TJ= 25°C
TJ= 125°C
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (TJ = 25°C)
IC, COLLECTOR CURRENT (A)
TJ= 125°C
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
IC, COLLECTOR CURRENT (A)
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 4, Gate charge
VGE, GATE-TO-EMITTER VOLTAGE (V)
TJ, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TC, Case Temperature (°C)
FIGURE 8, DC Collector Current vs Case Temperature
IC, DC COLLECTOR CURRENT (A)
-50 -25 0 25 50 75 100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
TJ, JUNCTION TEMPERATURE
FIGURE 7, Threshold Voltage vs Junction Temperature
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
6V
7V
8V
IC = 31A
9V
10V
11V
052-6340 Rev D 6 - 2011
0
1500
3000
4500
6000
7500
0 25 50 75 100 125
0
2000
4000
6000
8000
10000
12000
0 10 20 30 40 50
0
1000
2000
3000
4000
5000
0 25 50 75 100 125
0
1000
2000
3000
4000
5000
6000
7000
0 25 50 75 100 125
0
40
80
120
160
200
0 25 50 75 100 125
0
25
50
75
100
125
150
0 25 50 75 100 125
0
50
100
150
200
250
300
0 25 50 75 100 125
0
5
10
15
20
25
30
35
40
45
50
0 25 50 75 100 125
VGE =15V,TJ=125°C
VGE =15V,TJ=25°C
VCE = 400V
RG = 4.7
L = 100H
VCE = 400V
VGE = +15V
RG = 4.7
VCE = 400V
TJ = 25°C, or 125°C
RG = 4.7
L = 100H
VGE = 15V
VCE = 400V
VGE = +15V
RG = 4.7
VCE = 400V
VGE = +15V
RG = 4.7
RG = 4.7, L = 100H, VCE = 400V
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
RG = 4.7, L = 100H, VCE = 400V
TJ = 25 or 125°C,VGE = 15V
TJ = 125°C, VGE = 15V
TJ = 25°C, VGE = 15V
Eoff124A
Eoff,62A
Eon2,62A
Eoff,31A
Eon2,31A
VCE = 400V
VGE = +15V
TJ = 125°C Eon2,124A
Eon2,62A
Eoff,124A
Eoff,62A
Eon2,31A
Eoff,31A
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
td(ON), TURN-ON DELAY TIME (ns)
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
td(OFF), TURN-OFF DELAY TIME (ns)
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
tr, RISE TIME (ns)
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
tr, FALL TIME (ns)
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
Eon2, TURN ON ENERGY LOSS (J)
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Turn-Off Energy Loss vs Collector Current
EOFF, TURN OFF ENERGY LOSS (J)
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs Gate Resistance
SWITCHING ENERGY LOSSES (J)
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
SWITCHING ENERGY LOSSES (J)
Eon2,124A
Typical Performance Curves APT60GA60JD60
052-6340 Rev D 6 - 2011
Typical Performance Curves APT60GA60JD60
0
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
10-5 10 -4 10-3 10-2
10 1.0 10
-1
0 100 200 300 400 500
10
100
1000
10000
ZJC, THERMAL IMPEDANCE (°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.5
0.1
0.05
Coes
Cres
Cies
Peak T
J
= P
DM
x Z
θJC +T
C
Duty Factor D = t1/t2
t2
t1
P
DM
Note:
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
C, CAPACITANCE (pF)
0.1
1
10
100
500
1 10 100 1000
VCE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 18, Minimum Switching Safe Operating Area
IC, COLLECTOR CURRENT (A)
052-6340 Rev D 6 - 2011
Figure 21, Turn-on Switching Waveforms and Defi nitions
TJ = 125°C
Collector Current
Collector Voltage
Gate Voltage
5%
10%
td(on)
90%
10%
tr
5%
Switching Energy
Figure 22, Turn-off Switching Waveforms and Defi nitions
TJ = 125°C
Collector Voltage
Collector Current
Gate Voltage
Switching Energy
0
td(off)
10%
tf
90%
I
C
A
D.U.T.
V
CE
V
CC
APT30DQ60
Figure 20, Inductive Switching Test Circuit
APT60GA60JD60
052-6340 Rev D 6 - 2011
STATIC ELECTRICAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specifi ed.
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
Symbol Characteristic / Test Conditions APT60GA60JD60 Unit
IF(AV) Maximum Average Forward Current (TC = 92°C, Duty Cycle = 0.5) 60
Amps
IF(RMS) RMS Forward Current (Square wave, 50% duty) 79
IFSM Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms) 600
Symbol Characteristic / Test Conditions Min Type Max Unit
VFForward Voltage
IF = 60A 1.7
Volts
IF = 120A 2.0
IF = 60A, TJ = 125°C 1.4
Symbol Characteristic Test Conditions Min Typ Max Unit
trr Reverse Recovery Time IF = 1A, diF/dt = -100A/s ,
VR = 30V, TJ = 25°C-160 -
ns
trr Reverse Recovery Time
IF = 60A, diF/dt = -200A/s
VR = 400V, TC = 25°C
-70 -
Qrr Reverse Recovery Charge - 100 - nC
IRRM Maximum Reverse Recovery Current - 4- Amps
trr Reverse Recovery Time
IF = 60A, diF/dt = -200A/s
VR = 400V, TC = 125°C
-140 -ns
Qrr Reverse Recovery Charge - 690 - nC
IRRM Maximum Reverse Recovery Current - 9 - Amps
trr Reverse Recovery Time
IF = 60A, diF/dt = -1000A/s
VR = 400V, TC = 125°C
-80 -ns
Qrr Reverse Recovery Charge - 1540 -nC
IRRM Maximum Reverse Recovery Current - 31 - Amps
ZJC, THERMAL IMPEDANCE (°C/W)
10-5 10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 23. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
Peak T
J
= P
DM
x Z
θJC + TC
Duty Factor D = t1/t2
t2
t1
P
DM
Note:
D = 0.9
052-6340 Rev D 6 - 2011
Dynamic Characteristics TJ = 25°C unless otherwise specifi ed APT60GA60JD60
TJ
= 125°C
VR = 400V
30A
60A
120A
trr
Qrr
Qrr
trr
IRRM
300
250
200
150
100
50
0
30
25
20
15
10
5
0
Duty cycle = 0.5
TJ
= 175°C
0 25 50 75 100 125 150 25 50 75 100 125 150 175
1 10 100 200
120
100
80
60
40
20
0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
350
300
250
200
150
100
50
0
C
J, JUNCTION CAPACITANCE Kf, DYNAMIC PARAMETERS
(pF) (Normalized to 1000A/s)
I
F(AV) (A)
T
J, JUNCTION TEMPERATURE (°C) Case Temperature (°C)
Figure 28. Dynamic Parameters vs. Junction Temperature Figure 29. Maximum Average Forward Current vs. CaseTemperature
VR, REVERSE VOLTAGE (V)
Figure 30. Junction Capacitance vs. Reverse Voltage
200
180
160
140
120
100
80
60
40
20
0
2000
1800
1600
1400
1200
1000
800
600
400
200
0
V
F, ANODE-TO-CATHODE VOLTAGE (V) -diF/dt, CURRENT RATE OF CHANGE(A/s)
Figure 24. Forward Current vs. Forward Voltage Figure 25. Reverse Recovery Time vs. Current Rate of Change
-diF/dt, CURRENT RATE OF CHANGE (A/s) -diF/dt, CURRENT RATE OF CHANGE (A/s)
Figure 26. Reverse Recovery Charge vs. Current Rate of Change Figure 27. Reverse Recovery Current vs. Current Rate of Change
0 0.5 1 1.5 2 2.5 3.0 0 200 400 600 800 1000 1200
0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200
Q
rr, REVERSE RECOVERY CHARGE IF, FORWARD CURRENT
(nC) (A)
I
RRM, REVERSE RECOVERY CURRENT trr, REVERSE RECOVERY TIME
(A) (ns)
TJ = 175°C
TJ = -55°C
TJ = 25°C
TJ = 125°C
TJ
= 125°C
VR = 400V 120A
60A
30A
TJ
= 125°C
VR = 400V
120A
30A
60A
052-6340 Rev D 6 - 2011
Dynamic Characteristics TJ = 25°C unless otherwise specifi ed APT60GA60JD60
SOT-227 (ISOTOP®) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M 4
(4 places )
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Emitter/Anode Collector/Cathode
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Emitter/Anode
Emitter/Anode terminals ar e
shorted internally. Current
handling capability is equal
for either Emitter/Anode terminal .
)
4
3
1
2
5
Zer o
0.25 IRRM
PEARSON 2878
CURRENT
TRANSFORMER
diF/dt Adjus t
30μH
D.U.T.
+18V
0V
Vr
trr/Qrr
Waveform
APT60GT60BR
Figure 32. Diode Reverse Recovery Waveform Defi nition
Figure 31. Diode Test Circuit
IF - Forward Conduction Current
diF/dt - Rate of Diode Current Change Through Zero Crossing.
IRRM - Maximum Reverse Recovery Current
trr - Reverse Recovery Time measured from zero crossing where
diode current goes from positive to negative, to the point at
which the straight line through IRRM and 0.25, IRRM passes through zero.
Qrr - Area Under the Curve Defi ned by IRRM and tRR.
5
1
2
3
4
