FZT751
Document Number DS32208 Rev. 6 - 2 1 of 7
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FZT751
PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223
Features
• BVCEO > 60V
• Maximum continuous current IC(cont) = 3A
• Low Saturation Voltage
• Complementary Type – FZT651
• Lead-Free Finish; RoHS compliant (Note 1)
• Halogen and Antimony Free. “Green” Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT223
• UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish
• Weight: 0.112 grams (approximate)
Ordering Information (Notes 3 & 4)
Product Grade Marking Reel size (inches) Tape width (mm) Quantity per reel
FZT751TA Commercial FZT751 7 12 1,000
FZT751QTA Automotive FZT751 7 12 1,000
FZT751TC Commercial FZT751 13 12 4,000
FZT751QTC Automotive FZT751 13 12 4,000
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
3. For packaging details, go to our website at http://www.diodes.com.
4. Products with Q-suffix are automotive grade. Automotive products are electrical and thermal the same as the commercial, except where specified.
Marking Information
FZT751 = Product Type Marking Code
SOT223
Top View Device S
y
mbol Top View
Pin-Out
Green
751
FZT
C
E
B
C
E
C
B
FZT751
Document Number DS32208 Rev. 6 - 2 2 of 7
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Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -80 V
Collector-Emitter Voltage VCEO -60 V
Emitter-Base Voltage VEBO -5 V
Continuous Collector Current IC -3 A
Peak Pulse Current ICM -6 A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 5) PD 2 W
(Note 6) 3 W
Thermal Resistance, Junction to Ambient (Note 5) RθJA 62.5 °C/W
(Note 6) 41.7 °C/W
Thermal Resistance, Junction to Leads (Note 7) RθJL 12.93 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 5. For devices mounted on 25mm x 25mm single sided 2oz weight copper, in still air conditions.
6. For devices mounted on 50mm x 50mm single sided 2oz weight copper, in still air conditions.
7. Thermal resistance from junction to solder-point (at the end of the collector lead)
FZT751
Document Number DS32208 Rev. 6 - 2 3 of 7
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Thermal Characteristics
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
50
60
70
110
10m
100m
1
10
110
10m
100m
1
10
Tamb=25°C
25mm x 25mm
2oz FR4
VCE(sat)
Limit
100µs
1ms
10ms
100ms
1s
DC
Safe O p erating A rea
IC Coll ector Current (A )
VCE Col le ctor-Emitter Voltage (V)
0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0 50mm x 50mm
2oz FR4
25mm x 25mm
2oz FR4
Derating Curve
Temperature (°C)
Max Powe r Di ssipati on (W)
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
50
Tamb=25°C
25mm x 25mm
2oz FR4
Transient Thermal Imp ed ance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
The rmal Resist a n ce (°C/ W )
Pul se Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
25mm x 25mm
2oz FR4
50mm x 50mm
2oz FR4
Safe Operating Area
S ingle Pulse
Tamb=25°C
Puls e Power Dis s ipatio n
Pul se Width (s )
Max Powe r Di ssipati on (W)
D=0.1
D=0.05
Single Pulse
D=0.2
D=0.5
Tamb=25°C
50mm x 50mm
2oz FR4
Transient Thermal Impedance
Pu l se Width (s )
Thermal Resi stance (°C/ W)
Tamb=25°C
50mm x 50mm
2oz FR4 100µs
1ms
10ms
100ms
1s
DC
VCE(sat)
Limit
VCE Collector-Emitter Voltage (V)
IC Collect or Current (A)
FZT751
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Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO -80 − − V IC = -100µA
Collector-Emitter Breakdown Voltage (Note 8) BVCEO -60 − − V IC = -10mA
Emitter-Base Breakdown Voltage BVEBO -5 − − V IE = -100µA
Collector Cut-off Current ICBO − − -0.1 µA VCB = -60V
− − -10 VCB = -60V, Tamb = 100°C
Emitter Cut-off Current IEBO − − -0.1 µA
VEB = -4V
Collector-Emitter Saturation Voltage (Note 8) VCE(sat) − -0.15 -0.3 V IC = -1A, IB = -100mA
− -0.45 -0.6 IC = -3A, IB = -300mA
Base-Emitter Saturation Voltage (Note 8) VCE
(
sat
)
− -0.9 -1.25 V IC = -1A, IB = -100mA
Base-Emitter Turn-On Voltage (Note 8) VBE
(
on
)
− -0.8 -1.0 V IC = -1A, VCE = -2V
DC Current Gain (Note 8) hFE
70 200 −
−
IC = -50mA, VCE = -2V
100 200 300
IC = -500mA, VCE = -2V
80 170 − IC = -1A, VCE = -2V
40 150 − IC = -2A, VCE = -2V
Current Gain-Bandwidth Product (Note 8) fT 100 140 − MHz VCE = -5V, IC = -100mA
f = 100MHz
Turn-On Time ton − 40 − ns VCC = -10V, IC = -500mA
IB1 = IB2 = -50mA
Turn-Off Time toff − 450 − ns
Output Capacitance (Note 8) Cobo − − 30 pF
VCB = -10V, f = 1MHz
Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%
FZT751
Document Number DS32208 Rev. 6 - 2 6 of 7
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Package Outline Dimensions
Suggested Pad Layout
SOT223
Dim Min Max Typ
A 1.55 1.65 1.60
A1 0.010 0.15 0.05
b1 2.90 3.10 3.00
b2 0.60 0.80 0.70
C 0.20 0.30 0.25
D 6.45 6.55 6.50
E 3.45 3.55 3.50
E1 6.90 7.10 7.00
e — — 4.60
e1 — — 2.30
L 0.85 1.05 0.95
Q 0.84 0.94 0.89
All Dimensions in mm
Dimensions Value (in mm)
X1 3.3
X2 1.2
Y1 1.6
Y2 1.6
C1 6.4
C2 2.3
A1
A
X2
C1
C2
X1
Y2
Y1
FZT751
Document Number DS32208 Rev. 6 - 2 7 of 7
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FZT751
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR
PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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changes without further notice to this doc ument and an y product described herein. Diodes Incorporat ed does not assu me any liability arising
out of the application or use of this document or any product descr ibed herein; neither does Diodes Incorporated convey any license under
its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such
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represented on Diodes Incorporated website, harmless against all damages.
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LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the
express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in
the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems,
and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their
products and any use of Diodes I ncorporated products in such safety-critical, life support devices or systems, notwithstanding any devices-
or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes
Incorporated and its representatives against any d amages arising out of the use of Diodes Incorpor ated products in such safety-critical, life
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