DATA SH EET
Product specification
Supersedes data of 1997 Dec 04 2000 May 23
DISCRETE SEMICONDUCTORS
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
2000 May 23 2
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG540W
BFG540W/X; BFG540W/XR
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability.
APPLICATIONS
RF front end wideband applications in
the GHz range, such as analog and
digital cellular telephones, cordless
telephones (CT2, CT3, PCN, DECT,
etc.), radar detectors, pagers, satellite
television tuners (SATV),
MATV/CATV amplifiers and repeater
amplifiers in fibre-optic systems.
DESCRIPTION
NPN silicon planar epitaxial
transistors in 4-pin dual-emitter
SOT343N and SOT343R plas tic
packages.
MARKING
PINNING
TYPE NUMBER CODE
BFG540W N9
BFG540W/X N7
BFG540W/XR N8
PIN DESCRIPTION
BFG540W (see Fig.1)
1 collector
2base
3emitter
4emitter
BFG540W/X ( se e Fig.1)
1 collector
2emitter
3base
4emitter
BFG540W/XR (see Fig.2)
1 collector
2emitter
3base
4emitter
Fig.1 SOT343N.
lfpage
Top view
MBK523
21
34
Fig.2 SOT343R.
halfpage
Top view
MSB842
21
43
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base vo ltage open emitter 20 V
VCES collector-emitter voltage RBE =0 15 V
ICcollector current (DC) 120 mA
Ptot total power dissipation Ts85 C500 mW
hFE DC current gain IC=40mA; V
CE = 8 V 100 120 250
Cre feedback capacitance IC=0; V
CB =8V; f=1MHz 0.5 pF
fTtransition frequency IC=40mA; V
CE =8V; f=1GHz; T
amb =25C9GHz
GUM maximum unilateral
power gain IC=40mA; V
CE = 8 V; f = 900 MHz; Tamb =25C16 dB
IC=40mA; V
CE =8V; f=2GHz; T
amb =25C10dB
|s21|2insertion power gain IC=40mA; V
CE = 8 V; f = 900 MHz; Tamb =25C14 15 dB
F noise figure s
opt; IC=10mA; V
CE =8V; f=2GHz 2.1 dB
2000 May 23 3
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG540W
BFG540W/X; BFG540W/XR
LIMITING VALUES
In accordance with the Absolute Maxi mum Rating System (IEC 60134).
Note
1. Ts is the temperature at the sold ering point of the collector pin.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCES collector-emitter voltage RBE =0 15 V
VEBO emitter-base voltage open collector 2.5 V
ICcollector current (DC) 120 mA
Ptot total power dissipation T s85 C; see Fig.3; note 1 500 mW
Tstg storage temperature 65 +150 C
Tjjunction temperature 175 C
Fig.3 Power derating curve.
VCE 10 V.
handbook, halfpage
0 50 100 200
400
0
MBG248
150 T ( C)
o
s
Ptot
(mW)
600
200
THERMAL CHARACTE RISTI CS
Note
1. Ts is the temperature at the sold ering point of the collector pin.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering point Ts85 C; note 1 180 K/W
2000 May 23 4
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG540W
BFG540W/X; BFG540W/XR
CHARACTERISTICS
Tj=25C unless otherwise specified.
Notes
1. GUM is the maximum unilateral power gain, assuming s12 is zero.
2. IC=40mA; V
CE =8V; R
L=50; Tamb =25C;
a) fp=900MHz; f
q= 902 MHz; measured at f(2p q) = 898 MHz and f(2q p) =904MHz.
3. dim =60 dB (DIN45004B); Vp=V
o; Vq=V
o6dB; V
r=V
o6dB; R
L=75; VCE =8V; I
C=40mA;
a) fp=795.25MHz; f
q= 803.25 MHz; fr= 805.25 MHz; measured at f(p + q r) =793.25MHz.
4. IC=40mA; V
CE =8V; V
o= 275 mV; RL=75; Tamb =25C;
a) fp=250MHz; f
q= 560 MHz; measured at f(p + q) = 810 MHz.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)CBO collector-b ase breakdow n
voltage open emitter; IC=10A; I
E=0 20 V
V(BR)CES collector-emitter breakdown
voltage RBE =0; I
C=40A15V
V(BR)EBO emitter-base breakdown
voltage open collector; IE=100A; IC=0 2.5 V
ICBO collector cut-off current open emitter; VCB =8V; I
E=0 50 nA
hFE DC current gain IC=40mA; V
CE = 8 V 100 120 250
fTtransition frequenc y IC=40mA; V
CE = 8 V; f = 1 GHz;
Tamb =25C9GHz
Cccollector capacitance IE=i
e=0; V
CB =8V; f=1MHz 0.9 pF
Ceemitter cap acita nce IC=i
c=0; V
EB =0.5V; f=1MHz 2pF
Cre feedback ca pacitance IC=0; V
CB =8V; f=1MHz 0.5 pF
GUM maximum unilateral power
gain; note 1 IC=40mA; V
CE =8V; f=900MHz;
Tamb =25C16 dB
IC=40mA; V
CE = 8 V; f = 2 GHz;
Tamb =25C10 dB
|s21|2insertion power gain IC=40mA; V
CE =8V; f=900MHz;
Tamb =25C14 15 dB
F noise figure s
opt; IC=10mA; V
CE =8V;
f=900MHz 1.3 1.8 dB
s
opt; IC=40mA; V
CE =8V;
f=900MHz 1.9 2.4 dB
s
opt; IC=10mA; V
CE =8V;
f=2GHz 2.1 dB
PL1 output power at 1 dB gain
compression IC=40mA; V
CE =8V; f=900MHz;
RL=50; Tamb =25C21 dBm
ITO third order intercept point no te 2 34 dBm
Vooutput voltage note 3 500 mV
d2second order intermodulation
distortion note 4 50 dB
GUM 10 s21 2
1s
11 2
–1s
22 2
–
-------------------------------------------------------- dB.log=
2000 May 23 5
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG540W
BFG540W/X; BFG540W/XR
VCE =8V.
Fig.4 DC current gain as a fu nc tion of
collector current; typical values.
handbook, halfpage
0
250
50
100
150
200
MRA749
10
−2
10
−1
11010
2
hFE
IC (mA)
IC=0; f=1MHz.
Fig.5 Feedback capacitance as a function of
collector-base voltage; typical valu es.
handbook, halfpage
04
Cre
(pF)
VCB (V)
812
1
0
0.8
0.6
0.4
0.2
MRA750
Fig.6 Transition frequency as a function of
collector current; typical values.
f=1GHz; T
amb =25C.
handbook, halfpage
12
4
8
MLC044
0110 1102
10 I (mA)
C
f
(GHz)
TV = 8 V
CE
V = 4 V
CE
2000 May 23 6
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG540W
BFG540W/X; BFG540W/XR
f=900MHz; V
CE =8V.
Fig.7 Gain as a function o f c ollec t or current;
typical values.
handbook, halfpage
0
30
20
10
050
MLC045
10 20 30 40
gain
(dB)
I (mA)
C
MSG
GUM
Gmax
f=2GHz; V
CE =8V.
Fig.8 Gain as a function o f c ollec t or current;
typical values.
handbook, halfpage
0
30
20
10
050
MLC046
10 20 30 40
gain
(dB)
I (mA)
C
GUM
Gmax
IC=10mA; V
CE =8V.
Fig.9 Gain as a function o f freq uency; typical
values.
handbook, halfpage
50
010
MLC047
10
2
10
3
10
4
10
20
30
40
gain
(dB)
f (MHz)
GUM
Gmax
MSG
Fig.10 Gain as a function of freq uency; typical
values.
IC=40mA; V
CE =8V.
handbook, halfpage
50
010
MLC048
10
2
10
3
10
4
10
20
30
40
gain
(dB)
f (MHz)
GUM
Gmax
MSG
2000 May 23 7
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG540W
BFG540W/X; BFG540W/XR
Fig.11 Intermodulation distortion as a fun ction of
collector current; typical values.
Vo=500mV; f
(p + q r) = 793.25 MHz; VCE =8V; T
amb =25C;
RL=75.
handbook, halfpage
10 60
−20
−70
−60
−50
−40
−30
20 30 40
dim
(dB)
IC (mA)
50
MEA973
Fig.12 Second order intermodulation distortion as
a function of collector current; typical
values.
Vo=275mV; f
(p + q) = 810 MHz; VCE =8 V; T
amb =25C; RL=75.
handbook, halfpage
10 60
−20
−70
−60
−50
−40
−30
20 30 40
d2
(dB)
IC (mA)
50
MEA972
Fig.13 Minimum noise figure as a function of
collector current; typical values.
VCE =8V.
handbook, halfpage
4
2
1
0
MLC049
3
F
(dB)
I (mA)
C
f = 2000 MHz
1000 MHz
900 MHz
500 MHz
110 102
Fig.14 Associated available ga in as a function of
collector current; typical values.
VCE =8V.
handbook, halfpage
5
0
1
25
0
−5
10
Gass
(dB)
15
20
3
Fmin
(dB)
IC (mA)
4
MRA760
1102
10
2000 MHz
1000 MHz
2000 MHz
1000 MHz
f = 900 MHz
Gass
Fmin
900 MHz
500 MHz
2000 May 23 8
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG540W
BFG540W/X; BFG540W/XR
Fig.15 Minimum noise figure as a function of
frequency; typical values.
VCE =8V.
handbook, halfpage
4
2
1
0
MLC050
3
F
(dB)
f (MHz) 104
103
102
I = 40 mA
10 mA
C
Fig.16 Associated available ga in as a function of
frequency; typical values.
VCE =8V.
handbook, halfpage
5
0
1
25
0
−5
10
Gass
(dB)
15
20
3
Fmin
(dB)
f (MHz)
4
MRA761
10
2
10
4
10
3
Gass
10 mA Fmin
40 mA
40 mA
IC = 10 mA
2000 May 23 9
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG540W
BFG540W/X; BFG540W/XR
handbook, full pagewidth
MLC051
00o
0.2
0.6
0.4
0.8
1.0
1.0
45o
90o
135o
45o
135o
1
0.5
0
0.2
0.5
1
2
5
F = 3 dB
F = 2 dB
F = 1.5 dB
opt
Γ
F = 1.3 dB
min
2
stability
circle
unstable
region
1
5
o
180
0.2
50.2 0.5 2
90o
Fig.17 Common emitter noise figure circles; typ ica l values.
f=900MHz; V
CE =8V; I
C=10mA; Z
o=50
handbook, full pagewidth
MLC052
00o
0.2
0.6
0.4
0.8
1.0
1.0
45o
90o
135o
45o
90o
135o
1
0.5
0.5
1
2
5
2
F = 4 dB
opt
Γ
0.2
2
5
5
o
180 0
0.2
0.2 0.5 1
G = 9 dB G = 8 dB
G = 9.8 dB
max
F = 2.1 dB
min
F = 1.5 dB
F = 3 dB
Fig.18 Common emitter noise figure circles; typ ica l values.
f=2GHz; V
CE =8V; I
C=10mA; Z
o=50
2000 May 23 10
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG540W
BFG540W/X; BFG540W/XR
handbook, full pagewidth
MLC053
00o
0.2
0.6
0.4
0.8
1.0
1.0
45o
90o
135o
45o
90o
135o
1
0.5
0.2
0.5
1
2
5
2
0.2
2
5
5
o
180 0.2 1
00.5
40 MHz
3 GHz
VCE =8V; I
C=40mA; Z
o=50.
Fig.19 Common emitter input reflection coefficient (s11); typical values.
VCE =8V; I
C=40mA.
Fig.20 Common emitter forward transmission coefficient (s21); typical values.
handbook, full pagewidth
MLC054
0o
90o
135o
180o
90o
50 40 30 20 10
45o
135o45o
40 MHz
3 GHz
2000 May 23 11
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG540W
BFG540W/X; BFG540W/XR
VCE =8V; I
C=40mA.
Fig.21 Common emitter reverse transmission coefficient (s12); typical values.
handbook, full pagewidth
MLC055
0o
90o
135o
180o
90o
0.25 0.20 0.15 0.10 0.05
45o
135o45o
40 MHz
3 GHz
VCE =8V; I
C=40mAZo=50
Fig.22 Common emitter output reflection coefficient (s22); typical values.
handbook, full pagewidth
MLC056
00o
0.2
0.6
0.4
0.8
1.0
1.0
45o
90o
135o
180o
45o
90o
135o
1
0.5
0
0.2
0.5
1
2
0.2 0.5 2
40 MHz
3 GHz
0.2
1 5
5
2
5
2000 May 23 12
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG540W
BFG540W/X; BFG540W/XR
SPICE parameters for the BFG540W crystal
SEQUENCE No. PARAMETER VALUE UNIT
1 IS 1.045 fA
2BF184.3
3 NF 0.981
4 VAF 41.69 V
5 IKF 10.00 A
6 ISE 232.4 fA
7 NE 2.028
8 BR 43.99
9 NR 0.992
10 VAR 2.097 V
11 IKR 166.2 mA
12 ISC 129.8 aA
13 NC 1.064
14 RB 5.000
15 IRB 1.000 A
16 RBM 5.000
17 RE 353.5 m
18 RC 1.340
19 (1) XTB 0.000
20 (1) EG 1.110 eV
21 (1) XTI 3.000
22 CJE 1.978 pF
23 VJE 600.0 mV
24 MJE 0.332
25 TF 7.457 ps
26 XTF 11.40
27 VTF 3.158 V
28 ITF 156.9 mA
29 PTF 0.000 deg
30 CJC 793.7 fF
31 VJC 185.5 mV
32 MJC 0.084
33 XCJC 0.150
34 TR 1.598 ns
35 (1) CJS 0.000 F
Note
1. Thes e parameters have not been extracted, the
default values are shown.
List of components (see Fig.23).
36 (1) VJS 750.0 mV
37 (1) MJS 0.000
38 FC 0.814
DESIGNATION VALUE UNIT
Cbe 70 fF
Ccb 50 fF
Cce 115 fF
L1 0.34 nH
L2 0.10 nH
L3 0.25 nH
LB0.40 nH
LE0.40 nH
SEQUENCE No. PARAMETER VALUE UNIT
QLB= 50; QLE=50; QL
B,E(f) = QLB,E(f/fc)
fc= scaling frequency = 1 GHz.
Fig.23 Package equivalent circu i t SOT3 43 N;
SOT343R.
handbook, halfpage
MBC964
B
E
CB' C'
E'
LB
LE
L3
L1 L2
Ccb
Cbe ce
C
2000 May 23 13
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG540W
BFG540W/X; BFG540W/XR
PACKAGE OUTLINES
UNIT A1
max bpcD E
b1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.1
1.1
0.8 0.4
0.3 0.25
0.10
0.7
0.5 2.2
1.8 1.35
1.15
e
2.2
2.0
1.3
e1
0.2
y
0.10.21.15
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.23
0.13
SOT343N
D
e1
A
A1
Lp
Q
detail X
c
HE
E
vMA
AB
0 1 2 mm
scale
A
X
12
34
Plastic surface-mounted package; 4 leads SOT343N
e
wMB
97-05-21
06-03-16
bp
y
b1
2000 May 23 14
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG540W
BFG540W/X; BFG540W/XR
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT343R
D
A
A1
Lp
Q
detail X
c
HE
E
vMA
AB
0 1 2 mm
scale
X
21
43
Plastic surface-mounted package; reverse pinning; 4 leads SOT343R
wMB
97-05-21
06-03-16
bp
UNIT A1
max bpcD E
b1HELpQwv
mm 0.1
1.1
0.8 0.4
0.3 0.25
0.10
0.7
0.5 2.2
1.8 1.35
1.15
e
2.2
2.0
1.3
e1
0.2
y
0.10.21.15
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.23
0.13
e1
A
e
y
b1
2000 May 23 15
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG540W
BFG540W/X; BFG540W/XR
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document b efor e initiating or completing a design.
2. The product sta t us of device(s) described in this document may have changed sinc e this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the pr oduct specification.
DEFINITIONS
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provided in a Product data she et shall define the
specification of the product as agreed between NXP
Semiconductors and its custo m er, unless NXP
Semiconductors and cus to mer have explicitly agreed
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product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
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reserves the right to make changes to information
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Applications Applications that are described herein for
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Customers are responsible for the design and operation of
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associated with their ap plications and pr oducts.
2000 May 23 16
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG540W
BFG540W/X; BFG540W/XR
NXP Semiconductors does not accept any liability related
to any default, damage, cost s or problem which is based
on any weakness or default in the customer’s applications
or products, or the applic ation or use by customer’s third
party customer(s). Customer is responsible for doing all
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respect.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ra tings only and
(proper) operat ion of the device at these or any other
conditions above those given in the Recommende d
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
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product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be so lely at
customer’s own ris k, an d (c) customer fully inde mnifies
NXP Semiconductors for an y liability, damages or failed
product clai ms r esult ing fr om cus to mer d esi gn an d us e of
the product for automotive ap plic ations beyond NXP
Semiconductors ’ st andard warran ty and NXP
Semiconductors’ product specifications.
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Contact information
For additional information p lease visit: http://www.nxp.com
For sales offices addr esses send e- mail to: salesaddresses@nxp.com
© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in th is do cum en t d oes not form part of an y quotation or contract, is believed to b e a ccur ate a nd re liable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No cha ng es were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R77/04/pp17 Date of releas e: 2000 May 23