PD -95104 l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free IRF1404SPbF IRF1404LPbF HEXFET(R) Power MOSFET D RDS(on) = 0.004 G Description ID = 162A S Seventh Generation HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1404L) is available for lowprofile applications. VDSS = 40V D2Pak IRF1404SPbF TO-262 IRF1404LPbF Absolute Maximum Ratings ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds 162 115 650 3.8 200 1.3 20 519 95 20 5.0 -55 to +175 -55 to +175 300 (1.6mm from case ) Units W W W/C V mJ A mJ V/ns Typ. Max. Units --- --- 0.75 40 C/W A C Thermal Resistance Parameter RJC RJA www.irf.com Junction-to-Case Junction-to-Ambient (PCB mounted, steady-state)* 1 03/11/04 IRF1404S/LPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 40 --- --- 2.0 106 --- --- --- --- --- --- --- --- --- --- --- IDSS Drain-to-Source Leakage Current LS Internal Source Inductance --- Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance --- --- --- --- --- --- V(BR)DSS V(BR)DSS/TJ I GSS Typ. Max. Units Conditions --- --- V VGS = 0V, ID = 250A 0.036 --- V/C Reference to 25C, ID = 1mA 0.00350.004 VGS = 10V, ID = 95A --- 4.0 V VDS = 10V, ID = 250A --- --- S VDS = 25V, ID = 60A --- 20 VDS = 40V, VGS = 0V A --- 250 VDS = 32V, VGS = 0V, TJ = 150C --- 200 VGS = 20V nA --- -200 VGS = -20V 160 200 ID = 95A 35 --- nC VDS = 32V 42 60 VGS = 10V 17 --- VDD = 20V 140 --- ID = 95A ns 72 --- RG = 2.5 26 --- RD = 0.21 Between lead, nH 7.5 --- and center of die contact 7360 --- VGS = 0V 1680 --- VDS = 25V 240 --- pF = 1.0MHz, See Fig. 5 6630 --- VGS = 0V, VDS = 1.0V, = 1.0MHz 1490 --- VGS = 0V, VDS = 32V, = 1.0MHz 1540 --- VGS = 0V, VDS = 0V to 32V Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Starting TJ = 25C, L = 0.12mH RG = 25, IAS = 95A. (See Figure 12) ISD 95A, di/dt 150A/s, VDD V(BR)DSS, TJ 175C Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 162 showing the A G integral reverse --- --- 650 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 95A, VGS = 0V --- 71 110 ns TJ = 25C, IF = 95A --- 180 270 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A Use IRF1404 data and test conditions. Pulse width 300s; duty cycle 2%. * When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com IRF1404S/LPbF 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 4.5V 100 100 4.5V 20s PULSE WIDTH TJ = 25 C 10 0.1 1 10 10 0.1 100 1000 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 I D , Drain-to-Source Current (A) TJ = 25 C TJ = 175 C 100 V DS = 25V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics VGS , Gate-to-Source Voltage (V) 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 10 4.0 20s PULSE WIDTH TJ = 175 C 9.0 ID = 159A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF1404S/LPbF VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 10000 Ciss 8000 6000 4000 Coss 2000 20 VGS , Gate-to-Source Voltage (V) 12000 1 10 12 8 4 0 100 VDS , Drain-to-Source Voltage (V) 0 40 80 120 160 200 240 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 175 C 1000 ID , Drain Current (A) ISD , Reverse Drain Current (A) FOR TEST CIRCUIT SEE FIGURE 13 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10us 100us 100 TJ = 25 C 10 1 0.4 V GS = 0 V 0.8 1.2 1.6 2.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS = 32V VDS = 20V 16 Crss 0 ID = 95A 2.4 1ms 10ms 10 1 TC = 25 C TJ = 175 C Single Pulse 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF1404S/LPbF 200 LIMITED BY PACKAGE VGS 160 ID , Drain Current (A) RD VDS D.U.T. RG 120 + -V DD 10V Pulse Width 1 s Duty Factor 0.1 % 80 Fig 10a. Switching Time Test Circuit 40 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response(Z thJC ) 1 D = 0.50 0.20 0.1 0.10 PDM 0.05 t1 0.02 0.01 0.01 0.00001 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF1404S/LPbF D.U.T RG + V - DD IAS 20V 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp TOP 1000 DRIVER L VDS EAS , Single Pulse Avalanche Energy (mJ) 1200 15V A I AS BOTTOM ID 39A 67A 95A 800 600 400 200 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG QGS QGD 50 VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K 12V .2F .3F D.U.T. + V - DS 48 46 44 42 40 0 VGS 20 40 60 80 100 IAV , Avalanche Current ( A) 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 V DSav , Avalanche Voltage ( V ) 10 V Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current www.irf.com IRF1404S/LPbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG * * * * Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-channel HEXFET(R) Power MOSFETs www.irf.com 7 IRF1404S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L OT CODE 80 2 4 AS S E M B L E D ON W W 0 2, 20 00 IN T H E AS S E M B L Y L IN E "L " IN T E R N AT IO N AL R E C T IF IE R L OGO N ote: "P " in as s em bly lin e po s itio n in dicates "L ead-F r ee" P AR T N U M B E R F 5 30 S AS S E M B L Y L O T CO D E D AT E C O D E Y E AR 0 = 2 0 0 0 W E E K 02 L IN E L OR IN T E R N AT IO N AL R E C T IF IE R L O GO AS S E M B L Y L OT COD E 8 P AR T N U M B E R F 530S D AT E CO D E P = D E S IG N AT E S L E AD -F R E E P R O D U C T (O P T IO N AL ) Y E AR 0 = 2 0 0 0 W E E K 02 A = AS S E M B L Y S IT E CO D E www.irf.com IRF1404S/LPbF TO-262 Package Outline IGBT 1- GATE 2- COLLECTOR 3- EMITTER TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 IN T HE ASS EMBLY LINE "C" Note: "P" in as s embly line pos ition indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO ASS EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C OR INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE www.irf.com PART NUMBER DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) YEAR 7 = 1997 WEEK 19 A = AS S EMBLY S ITE CODE 9 IRF1404S/LPbF D2Pak Tape & Reel Infomation Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.03/04 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/