IRF1404SPbF
IRF1404LPbF
HEXFET® Power MOSFET
Seventh Generation HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF1404L) is available for low-
profile applications.
S
D
G
Absolute Maximum Ratings
Thermal Resistance
VDSS = 40V
RDS(on) = 0.004Ω
ID = 162A
lAdvanced Process Technology
lUltra Low On-Resistance
lDynamic dv/dt Rating
l175°C Operating Temperature
lFast Switching
lFully Avalanche Rated
lLead-Free
Description
03/11/04
www.irf.com 1
D2Pak
IRF1404SPbF
TO-262
IRF1404LPbF
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V162
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V115A
IDM Pulsed Drain Current 650
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy519 mJ
IAR Avalanche Current95 A
EAR Repetitive Avalanche Energy20 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJOperating Junction and -55 to +175
TSTG Storage Temperature Range -55 to +175
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.75 °C/W
RθJA Junction-to-Ambient (PCB mounted, steady-state)*––– 40
PD -95104
IRF1404S/LPbF
2www.irf.com
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
ISD ≤ 95A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
Starting TJ = 25°C, L = 0.12mH
RG = 25Ω, IAS = 95A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 95A, VGS = 0V
trr Reverse Recovery Time ––– 71 110 ns TJ = 25°C, IF = 95A
Qrr Reverse RecoveryCharge ––– 180 270 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
162
650
A
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.036 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 0.00350.004 ΩVGS = 10V, ID = 95A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = 10V, ID = 250µA
gfs Forward Transconductance 106 ––– ––– S VDS = 25V, ID = 60A
––– ––– 20 µA VDS = 40V, VGS = 0V
––– ––– 250 VDS = 32V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -20V
QgTotal Gate Charge ––– 160 200 ID = 95A
Qgs Gate-to-Source Charge ––– 35 ––– nC VDS = 32V
Qgd Gate-to-Drain ("Miller") Charge ––– 42 60 VGS = 10V
td(on) Turn-On Delay Time ––– 17 ––– VDD = 20V
trRise Time ––– 140 ––– ID = 95A
td(off) Turn-Off Delay Time ––– 72 ––– RG = 2.5Ω
tfFall Time ––– 26 ––– RD = 0.21Ω
Between lead,
and center of die contact
Ciss Input Capacitance ––– 7360 ––– VGS = 0V
Coss Output Capacitance ––– 1680 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 240 ––– pF ƒ = 1.0MHz, See Fig. 5
Coss Output Capacitance ––– 6630 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 1490 ––– VGS = 0V, VDS = 32V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 1540 ––– VGS = 0V, VDS = 0V to 32V
IGSS
ns
IDSS Drain-to-Source Leakage Current
nH
7.5
LSInternal Source Inductance ––– –––
Use IRF1404 data and test conditions.
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRF1404S/LPbF
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 175 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
10
100
1000
4.0 5.0 6.0 7.0 8.0 9.0
V = 25V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 175 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
159A
IRF1404S/LPbF
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
0
2000
4000
6000
8000
10000
12000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
040 80 120 160 200 240
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
95A
V = 20V
DS
V = 32V
DS
1
10
100
1000
0.4 0.8 1.2 1.6 2.0 2.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 175 C
J°
1
10
100
1000
10000
1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 175 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
IRF1404S/LPbF
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
25 50 75 100 125 150 175
0
40
80
120
160
200
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
LIMITED BY PACKAGE
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF1404S/LPbF
6www.irf.com
QG
QGS QGD
VG
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
020 40 60 80 100
IAV , Avalanche Current ( A)
40
42
44
46
48
50
V DSav , Avalanche Voltage ( V )
25 50 75 100 125 150 175
0
200
400
600
800
1000
1200
Starting T , Junction Temperature( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
39A
67A
95A
IRF1404S/LPbF
www.irf.com 7
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
+
-
+
+
+
-
-
-
Fig 14. For N-channel HEXFET® Power MOSFETs
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
IRF1404S/LPbF
8www.irf.com
N ote: "P " in as s embly line
pos ition indicates "L ead-F ree"
F530S
T H IS IS AN IR F 530 S WIT H
LOT CODE 8024
AS S E MB LE D ON WW 02, 2000
IN THE AS SEMBLY LINE "L"
ASSEMBLY
LOT CODE
IN T E R NAT IONAL
R E CT IF IE R
LOGO
PART NUMBER
DAT E CODE
YE AR 0 = 2000
WEEK 02
LINE L
OR
F 530S
A = ASSEMBLY SITE CODE
WEEK 02
P = DES IGNATES LEAD-FREE
PRODUCT (OPTIONAL)
RECTIFIER
IN T E R N AT ION AL
LOGO
LOT CODE
AS S E MB L Y
YEAR 0 = 2000
DATE CODE
PART NUMBER
D2Pak Part Marking Information (Lead-Free)
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
IRF1404S/LPbF
www.irf.com 9
AS S E MB L Y
LOT CODE
RECTIFIER
INTE RNAT IONAL
AS S EMB LE D ON WW 19, 1997
Note: "P" in as sembly line
pos ition indicates "L ead-F ree"
IN THE ASSEMBLY LINE "C" LOGO
THIS IS AN IRL3103L
LOT CODE 1789
E XAMP L E :
LINE C
DAT E CODE
WEEK 19
YEAR 7 = 1997
PART NUMBE R
PART NUMBER
LOGO
LOT CODE
ASSEMBLY
INTERNAT IONAL
RECT IFIER
PRODUCT (OPTIONAL)
P = DES IGNAT ES LE AD-FREE
A = ASSEMBLY SITE CODE
WE E K 19
YEAR 7 = 1997
DAT E CODE
OR
TO-262 Part Marking Information
TO-262 Package Outline
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
IRF1404S/LPbF
10 www.irf.com
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/04
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (. 961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
D2Pak Tape & Reel Infomation
Dimensions are shown in millimeters (inches)
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
