SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE BVcEo hee VcE(sat) fr C&yp @ 10V Ic Device Type @ 10mA Typical 1MHz Continuous @25C (Vv) Min. Max. @ Ic{mA) Voce (v) Max. @ le (mA) Ig (mA) (MHz) Typical (Pe) (mA) (mW) GES5819 40 150 GES5820 60 125 GES5821 60 125 MPSAO5 60 100 MPSA06E 80 100 MPSA12 20 50 MPSA13 30 50 MPSA14 _ 30 50 MPSA20 40 MPSA5S_ 60 4 100 MPSA56 : 80 100 MPSA65 | , 30 MPSA66 30 MPS3638 25 MPS3638A 25 MPS3702 | | 26 MPS3703 30 MPS3704 30 MPS3705 30 MPS3706 20 MPS5172 25 MPS6076 | 25 MPS6512 30 MPS6513 30 MPS6514 | 25 MPS6515 25 MPS6516 40 MPS6517 40 MPS6518 MPS6519 MPS6530 MPS6531 MPS6532 MPS6533 MPS6534 MPS6535 MPS6565 MPS6566 D39C1-6 D38H1-6 0391-6 D38L1-6 D38S1-10 D38Y1-3 D38ws-11 105 > SILICON SIGNAL TRANSISTORS 4 COMPLEMENTARY PAIRS jy TO0-92 PACKAGE Mi DEVICE BVcEo hee VcE(SAT) NPN PNP (v) MIN.-MAX. @ Ico, Vee (V) (Vv) MAX. @ tc, I 50- 1001 100mA 1 COMPLEMENT 100mA MPS3703 50mA PS$3704 MPS3703 MPS6512 Me eeet 6 i 14 1 M 1 MPS6515 250-500 MPS6519 50-100 90-180 MPS6513 150-300 MPS6514 15 120 90-270 MPS6533 1 MPS6530 MPS6534 90-270 100-500 MPS60 76 76 1 1 60-500 D D38L1-3 D -3 D38L4-6 D39C4-6 108 Silicon Transistors The General Electric MPS3704, MPS3705 and MPS3706 are silicon NPN planar, epi- , taxial, passivated transistors designed for general audio frequency applications and linear amplifiers. For complimentary PNP types see MPS3702 and MPS3703 specifications. absolute maximum ratings: (7, = 25C unless otherwise specified) MPS3704 MPS3705 MPS3706 Voltages 0 Vol LL EMITTER Collector to Emitter VcEO 30 olts 2. BASE Collector to Base Vso 50 40 Volts TO-92 3. COLLECTOR Emitter to Base VEBO 5 5 Volts i Current Collector Ic 600 mA : 482 I6)O19| 3 Dissipation Total Power T, = 25C Pr 350 _- Watts Total Power Te S 25C Pr 10 Watts Derate Factor Ta > 25C 2.82 mW/C Derate Factor Tc > 25C 80 -- mW/C Temperature 10 150 c NOTES: Storage and Operating Tere, Ty -55 to + 1. THREE LEADS Lead (1/16 + 1/32 from 2.CONTOUR of PACKAGE UNCONTROLLED OUTSIDE case for 10 sec.) T, +260 C 3. (THREE LEAOS) $b2 APPLIES BETWEEN Lj AND Lo. #b APPLIES BETWEEN Lo AND [2.70 MM (.500") FROM THE SEATING PLANE. DIAMETER 1S UN- CONTROLLED INL, AND BEYOND i2.70MM(500") FROM SEATING PLANE. electrical characteristics: (1, = 25C unless otherwise specified) MPS3704 MPS3705 MPS3706 STATIC CHARACTERISTICS Symbol Min. Max. Min. Max. Min. Max. Units Collector-Emitter Breakdown Voltage (le = 10mA, Ip = 0) Var)cEO* 30 30 20 Volts Collector-Base Breakdown Voltage V BrycBo 50 50 40 Volts (Ic = 100 uA, Ig = 0) Emitter-Base Breakdown Voltage V (BR)EBO 5 5 5 Volts (ig = 100uA,I = 0) Collector Cutoff Current (Vcp =20V,Ig = 0) IcBo 100 100 100 nA Emitter-Base Reverse Current (Ven =3 V, Ic =0) TEBo 100 100 100 nA Forward Current Transfer Ratio (Vce =2V,Ic = 50mA) hges 100 300 50 150 30 600 Collector-Emitter Saturation Voltage (Ic = 100mA, Ip = 5mA) Vorsan* 6 8 1 Volts Base-Emitter Voltage (Vce =2 V, Ic = 100mA) V BE(ON)* 5 1 5 1 3 1 Volts DYNAMIC CHARACTERISTICS Collector-Base Capacitance (Ven = 10 V,Ig =0,f = 1MHz) Corn 12 12 12 pf Current Gain-Bandwidth Product (Vce =2V,Ic = 50mA, f = 20MHz) f, 100 100 100 MHz *Pulse Conditions: Pulse Width S 300 xs and duty cycle = 2% 1362 AFE - FORWARD CURRENT TRANSFER RATIO MPS3704, 05, 06 TYPICAL CHARACTERISTIC CURVES Ig - COLLECTOR CURRENT - mA = a ny w w a a 3 a 6 20 20 oO 9 5 10 40 45 30 5 20 25 30 35 Voce COLLECTOR CURRENT ~ VOLTS COLLECTOR CHARACTERISTICS Ig~ COLLECTOR CURRENT~mA BETA VS. COLLECTOR CURRENT -58t amt 2st] Ley Lt \ \ \ o + i Vee(sat)- BASE-EMITTER SATURATION VOLTAGE -VOLTS > 5 t + \ x OF | 10 00 1000 Ig COLLECTOR CURRENT-mA BASE-EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT Veg csars COLLECTOR - EMITTER SATURATION VOLTAGE -VOLTS Tg" COLLECTOR CURRENT ~ mA COLLECTOR-EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT 1363