RF01007, Rev. B (9/17/13) ©2013 Microsemi Corporation Page 1 of 6
MP6KE6.8A – MP6KE200CA (e3)
Available
600 Watt Transient Voltage Suppressor
Screening in
reference to
MIL-PRF-19500
available
DESCRIPTION
This screened MP6KE6.8A – MP6KE200CA series provides a v ar iet y of enhanced reliabili ty
choices. Uni- and bi - directional options, as well RoHS compliant versions, are available. These
devices have the ability to clamp dangerous high voltage transients such as secondary effects of
lightning strikes, providing circuit protection to several class levels in the IEC61000-4-5
specification. Clamping time is virtually instantaneous. It also provides protection from transients
caused by i nduc tive lo ad du m ps, R FI , and ESD, providing pr ote ction to IEC610 00-4-2 a nd -4-4.
T-18 Package
Also available in:
DO-
214AA package
(J-bend surface mount)
MSMBJ5.0A thru
MSMBJ170CA
DO-
215AA package
(Gull-wing surf ace mo unt)
MSMBG5.0A thru
MSMBG170CA
Important: For the lates t information, visit our website http://www.microsemi.com.
FEATURES
• Available in both unidirectional and bidirectional configurations
• 3σ lot norm screening performed on standby current ID
• 100% surge tested devices
• Opti onal 100% screening for avionics grade is available
• Var ious screen ings in reference to MIL-PRF-19500 are available. Refer to Hirel Non-Hermetic
Product Portfolio for more details on the screening options.
(See part nomenclature for all options.)
• High reliability controlled devic es have w afer fabrication and assembly lot traceability
• Moisture classifi catio n is level 1 with no dry pack required per IPC/JEDEC J-STD-020B
• RoHS compliant versions are available
APPLICAT IONS / BENE FITS
• Selections from 6.8 to 200 volts breakdown (VBR)
• Economical TVS series for thru-hole mount ing
• Protects sensitive components s uch as IC’s , CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc
• Protection from switching transients & induced RFI
• Compliant to IEC 61000-4-2 and IEC 61000-4-4 for ESD and EFT protection respectively.
• Secondary lightning protection per IEC61000-4-5 with 42 ohms source impedance:
Class 1: MP6KE6.8A to MP6KE130A or CA
Class 2: MP6KE6.8A to MP6KE68A or CA
Class 3: MP6KE6.8A to MP6KE36A or CA
Class 4: MP6KE6.8A to MP6KE18A or CA
• Secondary lightning protection per IEC61000-4-5 with 12 ohms source impedance:
Class 1: MP6KE6.8A to MP6KE43A or CA
Class 2: MP6KE6.8A to MP6KE22A or CA
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: + 353 (0) 65 6822298
Website:
www.microsemi.com
RF01007, Rev. B (9/17/13) ©2013 Microsemi Corporation Page 2 of 6
MP6KE6.8A – MP6KE200CA (e3)
MAX IMUM RATINGS @ 25 ºC unless otherwis e stated
Parameters/Test Conditions
Symbol
Value
Unit
Junction and S torage Temperature
T
J
and
TSTG
-65 to +150
oC
Therm al Resistance, Junction to Lead @ 3/8 inch (10 mm)
lead l ength from body
RӨJL 25
o
C/W
Therm al Resistance, Junction to Ambient (1)
RӨJA
85
oC/W
Peak Pulse Power Dissipation (2)
10/1000
µ
s
PPP
600
W
Steady-State Power Dis sipati on @ T
L
= 25 ºC 3/8 inch (10
mm) from body
P
D
5
1.47
(1)
W
Tclamping (0 volts to V(BR)
min, theoretical)
Unidirectional
Bidirectional
< 100
< 5
ps
ns
Forward Voltage (3)
VF
3.5
V
Solder Temperature @ 10 s
260
oC
Notes: 1. When mounted on FR4 PC board wi th 4 m m 2 copper pads (1 oz) and track width 1 mm, length 25 mm.
2. With impulse repetition rate (duty factor) of 0.01 % or less (also Figure 1 and 4).
3. At 100 amp peak impulse of 8.3 ms half-sin e wave (unidirectional only).
M ECHANICAL and PACKAGING
• CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0
• TERM INALS: Tin-lead or RoHS co mpliant ann ealed matte-tin plating. Solderable per MIL-STD-750, method 2026.
• MARKING: Part number
• POLARITY: Cathode indicated by band. Bidir ectio nal not marked.
• TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number). Consult factory for quantities.
• WEIGHT: Approximately 0.7 grams
• See Package Dimensions on last page.
PART NOMENCLATURE
M P6K E 6.8 C A (e3)
Reliability Level*
M
MA
MX
MXL
(*see Hirel Non-Hermetic
Product Portfolio)
Point 6 kilowatt
Encapsulated Plastic
Package
RoHS Compliance
e3 = RoHS compliant
Blank = non-RoHS compliant
5 % Vol tage Tol er ance
Polarity
C = Bi-directional
Blank = Unidirectional
Working Standoff Voltage
Rating
RF01007, Rev. B (9/17/13) ©2013 Microsemi Corporation Page 3 of 6
MP6KE6.8A – MP6KE200CA (e3)
SYMBOLS & DEFINITIONS
Symbol
Definition
αV(BR)
Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change i n
temperature that caused it expressed in %/°C or mV /°C.
I(BR)
Breakdown Current: The current used for measuring Breakdown Voltage V(BR) .
ID
Standby Current: The current through the device at rated stand-off voltage.
IPP
Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse
current that may be appli ed to a devi ce. A random recurring or nonrepetitive transient current is usually due to an
external cause, and it is assumed that i ts effect will have completely disappeared before the next transient arrives.
PPP
Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The
impulse power is the maxim um -rated value of the product of IPP and VC.
V(BR)
Breakdown Voltage: The voltage across the device at a specified current I(BR) in the breakdown region.
VC
Clamping Voltage: The voltage across the device in a region of low differential resistanc e during the application of an
impulse current (IPP) for a specified waveform.
VWM
Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that
may be continuously applied over the standard operating temperature.
ELECTRICAL CHARACTERI STI CS @ 25 ºC
PART
NUMBER
BREA KDOWN VOLTAGE
RATED
STANDOFF
VOLTAGE
VWM
MAX
STANDBY
CURRENT
ID @ VWM
MAX
CLAMPING
VOLTAGE
VC @ IPP
PEAK
PULSE
CURRENT
(see Fig. 2)
IPP
TEMPERATURE
COEFFICIANT
of V(BR)
αV(BR)
V(BR) @
I(BR)
VMIN
VNOM
VMAX
mA
V
µA
V
A
% / oC
MP6KE6.8A
MP6KE7.5A
6.45
7.13
6.8
7.5
7.14
7.88
10
10
5.8
6.4
1000
500
10.5
11.3
57
53
0.057
0.061
MP6KE8.2A
MP6KE9.1A
7.79
8.65
8.2
9.1
8.61
9.55
10
1
7.02
7.78
200
50
12.1
13.4
50
45
0.065
0.068
MP6KE10A
MP6KE11A
9.5
10.5
10
11
10.5
11.6
1
1
8.55
9.4
10
5
14.5
15.6
41
38
0.073
0.075
MP6KE12A
MP6KE13A
11.4
12.4
12
13
12.6
13.7
1
1
10.2
11.1
5
5
16.7
18.2
36
33
0.078
0.081
MP6KE15A
MP6KE16A
14.3
15.2
15
16
15.8
16.8
1
1
12.8
13.6
1
1
21.2
22.5
28
27
0.084
0.086
MP6KE18A
MP6KE20A
17.1
19
18
20
18.9
21
1
1
15.3
17.1
1
1
25.2
27.7
24
22
0.088
0.090
MP6KE22A
MP6KE24A
20.9
22.8
22
24
23.1
25.2
1
1
18.8
20.5
1
1
30.6
33.2
20
18
0.092
0.094
MP6KE27A
MP6KE30A
25.7
28.5
27
30
28.4
31.5
1
1
23.1
25.6
1
1
37.5
41.4
16
14.4
0.096
0.097
MP6KE33A
MP6KE36A
31.4
34.2
33
36
34.7
37.8
1
1
28.2
30.8
1
1
45.7
49.9
13.2
12
0.098
0.099
MP6KE39A
MP6KE43A
37.1
40.9
39
43
41
45.2
1
1
33.3
36.8
1
1
53.9
59.3
11.2
10.1
0.100
0.101
MP6KE47A
MP6KE51A
44.7
48.5
47
51
49.4
53.6
1
1
40.2
43.6
1
1
64.8
70.1
9.3
8.6
0.101
0.102
MP6KE56A
MP6KE62A
53.2
58.9
56
62
58.8
65.1
1
1
47.8
53
1
1
77
85
7.8
7.1
0.103
0.104
MP6KE68A
MP6KE75A
64.6
71.3
68
75
71.4
78.8
1
1
58.1
64.1
1
1
92
103
6.5
5.8
0.104
0.105
MP6KE82A
MP6KE91A
77.9
86.5
82
91
86.1
95.5
1
1
70.1
77.8
1
1
113
125
5.3
4.8
0.105
0.106
MP6KE100A
MP6KE110A
95
105
100
110
105
116
1
1
85.5
94
1
1
137
152
4.4
3.4
0.106
0.107
MP6KE120A
MP6KE130A
114
124
120
130
126
137
1
1
102
111
1
1
165
179
3.6
3.3
0.107
0.107
MP6KE150A
MP6KE160A
143
152
150
160
158
168
1
1
128
136
1
1
207
219
2.9
2.7
0.108
0.108
MP6KE170A
MP6KE180A
161
171
170
180
179
189
1
1
145
154
1
1
234
246
2.6
2.4
0.108
0.108
MP6KE200A
190
200
210
1
171
1
274
2.2
0.108
Consult factory for higher vo lta ges.
NOTE 1: For bidirectional construction, cap aci ta nce wi ll be one -half that shown in Figure 4.
RF01007, Rev. B (9/17/13) ©2013 Microsemi Corporation Page 4 of 6
MP6KE6.8A – MP6KE200CA (e3)
GRAPHS
tw – Pulse Width µs
FIGURE 1
P eak Pulse Power vs Pulse Time
t – Time – ms
Test waveform p ar amet er s: tr=1 0 µs, tp=1 000 µs
FIGURE 2
P uls e Wavefo r m for 1 0/1000 µs Exponential Surge
Pulse Current in Percent of I
PP
P
PP
- Peak Pulse Power - kW
RF01007, Rev. B (9/17/13) ©2013 Microsemi Corporation Page 5 of 6
MP6KE6.8A – MP6KE200CA (e3)
GRAPHS (continued)
TL Lead Temperature °C
FIGURE 3
Derating Curve
V(BR) - Breakdown Volt age - Volts
FI GURE 4
Typical C apacitance vs . Br eakdown Voltage
Peak Pulse Power (P
PP
) o r Continuous
Power in Percent of 25° C Rating
C – Capacitance - Picofarads
RF01007, Rev. B (9/17/13) ©2013 Microsemi Corporation Page 6 of 6
MP6KE6.8A – MP6KE200CA (e3)
PACKAGE DIME NSIONS
NOTES: Cathode indicated by band.
Dimensions
Dim
Inches
Millimeters
Min
Max
Min
Max
LL
1.00
-
25.4
-
BL
0.330
0.350
8.39
8.89
BD
0.130
0.145
3.31
3.68
LD
0.038
0.042
0.97
1.06
