TGA2512-SM 4 - 14 GHz Balanced LNA Key Features * * * * * * * Frequency Range: 4 - 14.2 GHz 2.3 dB Nominal Noise Figure 25 dB Nominal Gain 15 dB AGC Range 13 dBm Nominal P1dB 24dBm Nominal OIP3 Bias: 5 V, 160 mA Gate Bias 5 V, 90 mA Self Bias Package Dimensions: 4.0 x 4.0 x 0.9 mm * Self Bias Gate Bias Primary Applications * * * Product Description Lead-Free & RoHS compliant. Evaluation boards are available. 5 10 4 NF 0 -10 3 2 IRL -20 1 ORL -30 Noise Figure (dB) Gain 20 0 4 5 6 7 8 9 10 11 12 13 14 Frequency (GHz) Bias Conditions: Gate Bias, Vd = 5V, Id = 160mA 30 6 Gain 20 5 10 4 NF 0 -10 2 IRL -20 3 ORL -30 1 Noise Figure (dB) In self-biased mode the TGA2512-SM achieves 6dBm typical P1dB, while in gate-biased mode the typical P1dB is over 13dBm. Bias Conditions: Self Bias, Vd = 5V, Id = 90mA 30 6 Spar & NF (dB) The TGA2512-SM is designed for maximum ease of use. TGA2512-SM can handle up to 21dBm input power reliably, while the build-in gain control provides 15dB of typical gain control range. The part can be used in selfbiased mode, with a single +5V supply connection, or in gate biased mode, allowing the user to control the current for a particular application. Measured Data Spar & NF (dB) The TriQuint TGA2512-SM is a packaged Xband balanced LNA with AGC amplifier for EW, ECM, and RADAR receiver or driver amplifier applications. The TGA2512-SM provides excellent noise performance with typical midband NF of 2.3dB, and high gain, 25dB from 4-14.2GHz X-Band Radar EW, ECM Point-to-Point Radio 0 4 5 6 7 8 9 10 11 12 13 14 Frequency (GHz) Datasheet subject to change without noitce TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev D 1 TGA2512-SM TABLE I MAXIMUM RATINGS 1/ SYMBOL PARAMETER VALUE Gate Bias: [4 + (0.009)(Id)] V NOTES Vd Drain Voltage Vg Gate Voltage Range Id Drain Current (gate biased) 240 mA Gate Current 7.04 mA PIN Input Continuous Wave Power 21 dBm PD Power Dissipation 1.56 W 2/ 4/ TCH Operating Channel Temperature 200 C 5/ Mounting Temperature (30 Seconds) 260 C Ig TSTG Self Bias: [3.5 + (0.022)(Id)] V 2/ 3/ -1 TO +0.5 V Storage Temperature 2/ -65 to 150 C 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 3/ Unit for Id is mA 4/ When operated at this bias condition with a base plate temperature of 85 C, the median life is 9.3E4 hours. 5/ Junction operating temperature will directly affect the device median time to failure (Tm). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev D 2 TGA2512-SM TABLE II-A ELECTRICAL CHARACTERISTICS (Ta = 25 0C, Nominal) Self Bias TGA2512-1-SM Gate Bias TGA2512-2-SM UNITS Frequency Range 4 - 14.2 4 - 14.2 GHz Drain Voltage, Vd 5.0 5.0 V Drain Current, Id 160 160 mA Gate Voltage, Vg - -0.1 V Small Signal Gain, S21 22 25 dB Input Return Loss, S11 -10 -10 dB Output Return Loss, S22 -20 -20 dB Noise Figure, NF 2.3 2.3 dB Output Power @ 1dB Gain Compression, P1dB 6 13 dBm OIP3 16 24 dBm -0.02 -0.02 dB/C PARAMETER Temperature Gain Coefficent Note: Table II Lists the RF Characteristics of typical devices as determined by fixtured measurements. TABLE II-B TGA2512-2-SM ELECTRICAL CHARACTERISTICS (Vd=5V, Id=160mA, Vctrl=0V, Ta = 25 0C, Nominal) PARAMETER Frequency Range Min Typ Max UNITS 14.2 GHz 160 200 mA 0.2 V 11 Drain Current, Id Gate Voltage, Vg -0.4 -0.1 Small Signal Gain, S21 19 24 dB Input Return Loss, S11 -7 -12 dB Output Return Loss, S22 -7 -12 dB Noise Figure, NF 3 4.5 dB Output Power @ 1dB Gain Compression, P1dB 10 13 dBm OIP3 16 22 dBm TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev D 3 TGA2512-SM TABLE III THERMAL INFORMATION TEST CONDITIONS TCH (C) JC (C/W) Tm (HRS) JC Thermal Resistance (channel to Case) Vd = 5 V Id = 160 mA Gate Bias Pdiss = 0.80 W 115 37.6 1.3E+6 JC Thermal Resistance (channel to Case) Vd = 5 V Id = 90 mA Self Bias Pdiss = 0.45 W 97.7 28.2 7.2E+6 PARAMETER Note: Worst case condition with no RF applied, 100% of DC power is dissipated, Case Temperature at 85 C Median Lifetime (Tm) vs. Channel Temperature TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev D 4 TGA2512-SM Measured Data Bias Conditions: Self Bias, Vd = 5 V, Id = 90 mA 30 28 26 24 22 Gain (dB) 20 18 16 14 12 10 8 6 4 2 0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) 30 Vctrl=0.0V Vctrl=2.5V Vctrl=2.75V Vctrl=3.0V Vctrl=3.25V Vctrl=3.5V Vctrl=3.75V Vctrl=4.0V Vctrl=4.25V Vctrl=4.5V Vctrl=5.0V 28 26 24 Gain Over Vctrl (dB) 22 20 18 16 14 12 10 8 6 4 2 0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev D 5 TGA2512-SM Measured Data Bias Conditions: Self Bias, Vd = 5 V, Id = 90 mA 0 -2 -4 Input Return Loss (dB) -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 12 13 14 15 16 17 18 Frequency (GHz) 0 -2 -4 Output Return Loss (dB) -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 2 3 4 5 6 7 8 9 10 11 Frequency (GHz) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev D 6 TGA2512-SM Measured Data Bias Conditions: Self Bias, Vd = 5 V, Id = 90 mA 10 9 Noise Figure (dB) 8 7 6 5 4 3 2 1 0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) 10 Noise Figure Over Vctrl (dB) 9 8 7 6 5 4 Vctrl=0V Vctrl=2.5V Vctrl=2.75V Vctrl=3.0V Vctrl=3.5V Vctrl=4.0V Vctrl=5.0V 3 2 1 0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev D 7 TGA2512-SM Measured Data Bias Conditions: Self Bias, Vd = 5 V, Id = 90 mA 15 Vctrl=0V Vctrl=2V Vctrl=3V Vctrl=3.5V Vctrl=4V Vctrl=5V 12 P1dB Over Vctrl (dBm) 9 6 3 0 -3 -6 -9 -12 -15 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev D 8 TGA2512-SM Measured Data Bias Conditions: Self Bias, Vd = 5 V, Id = 90 mA 26 24 22 OIP3 (dBm) 20 18 16 14 12 10 8 5 6 7 8 9 10 11 12 13 14 15 Frequency (GHz) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev D 9 TGA2512-SM Measured Data Bias Conditions: Gate Bias, Vd = 5 V, Id = 160 mA 30 28 26 24 22 Gain (dB) 20 18 16 14 12 10 8 6 4 2 0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) 30 Vctrl=0V Vctrl=1V Vctrl=2V Vctrl=3V Vctrl=4V Vctrl=5V 28 26 24 Gain Over Vctrl (dB) 22 20 18 16 14 12 10 8 6 4 2 0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev D 10 TGA2512-SM Measured Data Bias Conditions: Gate Bias, Vd = 5 V, Id = 160 mA 0 -2 -4 Input Return Loss (dB) -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 12 13 14 15 16 17 18 Frequency (GHz) 0 -2 -4 Output Return Loss (dB) -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 2 3 4 5 6 7 8 9 10 11 Frequency (GHz) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev D 11 TGA2512-SM Measured Data Bias Conditions: Gate Bias, Vd = 5 V, Id = 160 mA 10 9 Noise Figure (dB) 8 7 6 5 4 3 2 1 0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) 10 Noise Figure Over Vctrl (dB) 9 8 7 6 5 4 Vctrl=0V Vctrl=2.5V Vctrl=2.75V Vctrl=3.0V Vctrl=3.5V Vctrl=4.0V Vctrl=5.0V 3 2 1 0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev D 12 TGA2512-SM Measured Data Bias Conditions: Gate Bias, Vd = 5 V, Id = 160 mA 15 12 P1dB Over Vctrl (dBm) 9 6 3 0 -3 -6 Vctrl=0V Vctrl=2V Vctrl=3V Vctrl=3.5V Vctrl=4V Vctrl=5V -9 -12 -15 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev D 13 TGA2512-SM Measured Data Bias Conditions: Gate Bias, Vd = 5 V, Id = 160 mA 26 24 22 OIP3 (dBm) 20 18 16 14 12 10 8 5 6 7 8 9 10 11 12 13 14 15 Frequency (GHz) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev D 14 TGA2512-SM Package Pinout Diagram 11 10 12 1 9 8 2 13 3 7 6 Top View 5 4 Bottom View Dot indicates Pin 1 Self Bias Pin Description 1,3, 4, 5, 6, 7, 9, 12 NC 2 RF Input 8 RF Output 10 Vd 11 Vctrl 13 Gnd Self Bias: Vd = 5V (Id = ~90mA), Vctrl = 0 to +5V for Gain adjustment Gate Bias Pin Description 1,3, 4, 5, 6, 7, 9 NC 2 RF Input 8 RF Output 10 Vd 11 Vctrl 12 Vg 13 Gnd Gate Bias: Vd = 5V , Vctrl = 0 to +5V for Gain adjustment Vg = Range, -0.5 to 0, typically ~ -0.1 will provide ~160mA of Id. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev D 15 TGA2512-SM Mechanical Drawing Units: Millimeters GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev D 16 TGA2512-SM Recommended Board Layout Assembly Self Bias 100pF 0402 Case Size TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev D 17 TGA2512-SM Recommended Board Layout Assembly Gate Bias 100pF 0402 Case Size TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev D 18 TGA2512-SM Ordering Information Part Package Style TGA2512-1-SM QFN 4x4 Surface Mount - Self Bias TGA2512-2-SM QFN 4x4 Surface Mount - Gate Bias TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev D 19