MB1S - MB8S — Bridge Rectifiers
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
MB1S - MB8S Rev. D1 1
May 2009
MB1S - MB8S
Bridge Rectifiers
Features
• Low leakage
• Surge overload rating : 35 amperes peak.
• Ideal for printed circuit board.
• UL certified, UL #E111753 and E326243.
Absolute Maximum Ratings * TA = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
* Device mounted on PCB with 0.5-0.5" (13x13 mm) lead length.
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
1S 2S 4S 6S 8S
VRRM Maximum Repetitive Reverse Voltage 100 200 400 600 800 V
VRMS Maximum RMS Bridge Input Voltage 70 140 280 420 560 V
VRDC Reverse Voltage (Rated VR) 100 200 400 600 800 V
IF(AV) Average Rectified Forward Current @ TA = 50°C 0.5 A
IFSM Non-Repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave 35 A
TSTG Storage Temperature Range -55 to +150 °C
TJOperating Junction Temperature -55 to +150 °C
Symbol Parameter Value Units
PDPower Dissipation 1.4 W
RθJA Thermal Resistance, Junction to Ambient,* per leg 85 °C/W
RθJL Thermal Resistance, Junction to Lead,* per leg 20 °C/W
Symbol Parameter Value Units
VFForward Voltage, per bridge @ 0.5 A 1.0 V
IRReverse Current, per leg @ Rated VR TA = 25°C
TA = 125°C
5.0
0.5
µA
mA
I2t rating for fusing t < 8.3 ms 5.0 A2s
CTTotal Capacitance, per leg VR = 4.0V, f = 1.0MHz 13 pF
SOIC-4
Polarity symbols molded
or marking on body
MB1S - MB8S — Bridge Rectifiers
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
MB1S - MB8S Rev. D1 2
Typical Performance Characteristics
Figure 1. Forward Current Derating Curve Figure 2. Forward Voltage Characteristics
Figure 3. Non-Repetitive Surge Current Figure 4. Reverse Current vs Reverse Voltage
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I40
