IRFPE50PBF - Vishay Presicion Group

Document Number: 91248 www.vishay.com

S11-0442-Rev. B, 14-Mar-11 1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Power MOSFET

IRFPE50, SiHFPE50

Vishay Siliconix

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Isolated Central Mounting Hole

•Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-247AC package is preferred for

commercial-industrial applications where higher power levels

preclude the use of TO-220AB devices. The TO-247AC is

similar but superior to the earlier TO-218 package because of

its isolated mounting hole. It also provides greater creepage

distance between pins to meet the requirements of most

safety specifications.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. VDD = 50 V, starting TJ = 25 °C, L = 23 mH, Rg = 25 Ω, IAS = 7.8 A (see fig. 12).

c. ISD ≤ 7.8 A, dI/dt ≤ 140 A/μs, VDD ≤ 600 V, TJ ≤ 150 °C.

d. 1.6 mm from case.

PRODUCT SUMMARY

VDS (V) 800

RDS(on) (Ω)V

GS = 10 V 1.2

Qg (Max.) (nC) 200

Qgs (nC) 24

Qgd (nC) 110

Configuration Single

N-Channel MOSFET

TO-247AC

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package TO-247AC

Lead (Pb)-free IRFPE50PbF

SiHFPE50-E3

SnPb IRFPE50

SiHFPE50

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage VDS 800 V

Gate-Source Voltage VGS ± 20

Continuous Drain Current VGS at 10 V TC = 25 °C ID

7.8

ATC = 100 °C 4.9

Pulsed Drain CurrentaIDM 31

Linear Derating Factor 1.5 W/°C

Single Pulse Avalanche EnergybEAS 770 mJ

Repetitive Avalanche CurrentaIAR 7.8 A

Repetitive Avalanche EnergyaEAR 19 mJ

Maximum Power Dissipation TC = 25 °C PD190 W

Peak Diode Recovery dV/dtcdV/dt 2.0 V/ns

Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C

Soldering Recommendations (Peak Temperature) for 10 s 300d

Mounting Torque 6-32 or M3 screw 10 lbf · in

1.1 N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply

www.vishay.com Document Number: 91248

2S11-0442-Rev. B, 14-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRFPE50, SiHFPE50

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient RthJA -40

°C/W

Case-to-Sink, Flat, Greased Surface RthCS 0.24 -

Maximum Junction-to-Case (Drain) RthJC -0.65

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 800 - - V

VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA -0.98-

V/°C

Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V

Gate-Source Leakage IGSS V

GS = ± 20 V - - ± 100 nA

Zero Gate Voltage Drain Current IDSS

VDS = 800 V, VGS = 0 V - - 100 μA

VDS = 640 V, VGS = 0 V, TJ = 125 °C - - 500

Drain-Source On-State Resistance RDS(on) V

GS = 10 V ID = 4.7 Ab--1.2Ω

Forward Transconductance gfs VDS = 100 V, ID = 4.7 Ab5.6 - - S

Dynamic

Input Capacitance Ciss VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5

-3100-

pFOutput Capacitance Coss -800-

Reverse Transfer Capacitance Crss -490-

Total Gate Charge Qg

VGS = 10 V ID = 7.8 A, VDS = 400 V,

see fig. 6 and 13b

- - 200

nC Gate-Source Charge Qgs --24

Gate-Drain Charge Qgd - - 110

Turn-On Delay Time td(on)

VDD = 400 V, ID = 7.8 A,

Rg = 6.2 Ω, RD= 52 Ω

see fig. 10b

-19-

Rise Time tr -38-

Turn-Off Delay Time td(off) -120-

Fall Time tf -39-

Internal Drain Inductance LD Between lead,

6 mm (0.25") from

package and center of

die contact

-5.0-

Internal Source Inductance LS-13-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current ISMOSFET symbol

showing the

integral reverse

p - n junction diode

--7.8

Pulsed Diode Forward CurrentaISM --31

Body Diode Voltage VSD TJ = 25 °C, IS = 7.8 A, VGS = 0 Vb--1.8V

Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 7.8 A,

dI/dt = 100 A/μsb

- 650 980 ns

Body Diode Reverse Recovery Charge Qrr -3.85.7μC

Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Document Number: 91248 www.vishay.com

S11-0442-Rev. B, 14-Mar-11 3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRFPE50, SiHFPE50

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, TC = 150 °C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

www.vishay.com Document Number: 91248

4S11-0442-Rev. B, 14-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRFPE50, SiHFPE50

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

Document Number: 91248 www.vishay.com

S11-0442-Rev. B, 14-Mar-11 5

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRFPE50, SiHFPE50

Vishay Siliconix

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10a - Switching Time Test Circuit

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

VGS

D.U.T.

10 V

VDS

VDD

VDS

90 %

10 %

VGS

td(on) trtd(off) tf

www.vishay.com Document Number: 91248

6S11-0442-Rev. B, 14-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRFPE50, SiHFPE50

Vishay Siliconix

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

0.01 Ω

D.U.T

-V

10 V

Vary t

to obtain

required I

IAS

VDS

VDD

VDS

QGS QGD

Charge

10 V

D.U.T.

3 mA

VGS

VDS

IGID

0.3 µF

0.2 µF

50 kΩ

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

Document Number: 91248 www.vishay.com

S11-0442-Rev. B, 14-Mar-11 7

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRFPE50, SiHFPE50

Vishay Siliconix

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?91248.

P.W. Period

dI/dt

Diode recovery

dV/dt

Ripple ≤ 5 %

Body diode forward drop

Re-applied

voltage

Reverse

recovery

current

Body diode forward

current

VGS = 10 Va

ISD

Driver gate drive

D.U.T. lSD waveform

D.U.T. VDS waveform

Inductor current

D = P.W.

Period

Peak Diode Recovery dV/dt Test Circuit

VDD

• dV/dt controlled by Rg

• Driver same type as D.U.T.

• ISD controlled by duty factor “D”

• D.U.T. - device under test

D.U.T. Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

Note

a. VGS = 5 V for logic level devices

VDD

Package Information

www.vishay.com Vishay Siliconix

Revision: 24-Sep-12 1Document Number: 91360

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TO-247AC (High Voltage)

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.

2. Contour of slot optional.

3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at

the outermost extremes of the plastic body.

4. Thermal pad contour optional with dimensions D1 and E1.

5. Lead finish uncontrolled in L1.

6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154").

7. Outline conforms to JEDEC outline TO-247 with exception of dimension c.

8. Xian and Mingxin actually photo.

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.

A 4.58 5.31 0.180 0.209 D2 0.51 1.30 0.020 0.051

A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625

A2 1.17 2.49 0.046 0.098 E1 13.72 - 0.540 -

b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC

b1 0.99 1.35 0.039 0.053 Ø k 0.254 0.010

b2 1.53 2.39 0.060 0.094 L 14.20 16.25 0.559 0.640

b3 1.65 2.37 0.065 0.093 L1 3.71 4.29 0.146 0.169

b4 2.42 3.43 0.095 0.135 N 7.62 BSC 0.300 BSC

b5 2.59 3.38 0.102 0.133 Ø P 3.51 3.66 0.138 0.144

c 0.38 0.86 0.015 0.034 Ø P1 - 7.39 - 0.291

c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224

D 19.71 20.82 0.776 0.820 R 4.52 5.49 0.178 0.216

D1 13.08 - 0.515 - S 5.51 BSC 0.217 BSC

ECN: X12-0167-Rev. B, 24-Sep-12

DWG: 5971

0.10 AC

M M

E/2

(2)

(4)

R/2

2 x R

See view B

2 x e

3 x b

2 x b2

123

Ø k BD

M M

ØP (Datum B)

ØP1

0.01 BD

M M

View A - A

Thermal pad

DDE E

View B

(b1, b3, b5) Base metal

(b, b2, b4)

Section C - C, D - D, E - E

(c)

Planting

Legal Disclaimer Notice

www.vishay.com Vishay

Revision: 12-Mar-12 1Document Number: 91000

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,

“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other

disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or

the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all

liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,

consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular

purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical

requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements

about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular

product with the properties described in the product specification is suitable for use in a particular application. Parameters

provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All

operating parameters, including typical parameters, must be validated for each customer application by the customer’s

technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,

including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining

applications or for any other application in which the failure of the Vishay product could result in personal injury or death.

Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree

to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and

damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay

or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to

obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by

any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the

definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council

of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment

(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that

all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.