This is information on a product in full production.
April 2012 Doc ID 4132 Rev 8 1/10
10
TIP142, TIP147
Complementary power Darlington transistors
Datasheet — production data
Features
■Monolithic Darlington configuration
■Integrated antiparallel collector-emitter diode
Applications
■Linear and switching industrial equipment
Description
The devices are manufactured in planar
technology with “base island” layout and
monolithic Darlington configuration. The resulting
transistors show exceptional high gain
performance coupled with very low saturation
voltage.
Figure 1. Internal schematic diagrams
TO-247
123
R1 typ. = 5 kΩ
R2 typ. = 60 Ω
R1 typ. = 8 kΩ
R2 typ. = 100 Ω
Table 1. Device summary
Part number Marking Polarity Package Packaging
TIP142 TIP142 NPN TO-247 Tube
TIP147 TIP147 PNP
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Absolute maximum ratings TIP142, TIP147
2/10 Doc ID 4132 Rev 8
1 Absolute maximum ratings
Note: For PNP type voltage and current are negative.
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) 100 V
VCEO Collector-emitter voltage (IB = 0) 100 V
VEBO Emitter-base voltage (IC = 0) 5 V
ICCollector current 10 A
ICM Collector peak current 20 A
IBBase current 0.5 A
PTOT Total dissipation at Tcase = 25 °C 125 W
TSTG Storage temperature -65 to 150 °C
TJMax. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
RthJC Thermal resistance junction-case __max 1 °C/W
TIP142, TIP147 Electrical characteristics
Doc ID 4132 Rev 8 3/10
2 Electrical characteristics
Tcase = 25 °C; unless otherwise specified.
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
ICBO
Collector cut-off current
(IE = 0) VCB = 100 V 1 mA
ICEO
Collector cut-off current
(IB = 0) VCE = 50 V 2 mA
IEBO
Emitter cut-off current
(IC = 0) VEB = 5 V 2 mA
VCEO(sus)(1)
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %.
For PNP type voltage and current are negative.
Collector-emitter
sustaining voltage
(IB = 0)
IC = 30 mA 100 V
VCE(sat)(1) Collector-emitter
saturation voltage
IC = 5 A IB = 10 mA
IC = 10 A IB = 40 mA
2
3
V
V
VBE(on)(1) Base-emitter on voltage IC = 10 A VCE = 4 V 3 V
hFE(1) DC current gain IC = 5 A VCE = 4 V
IC = 10 A VCE = 4 V
1000
500
ton
toff
Resistive load
Tur n - o n ti m e
Turn-off time
IC = 10 A RL = 3 Ω
IB1 = -IB2 = 40 mA
0.9
4
µs
µs
Electrical characteristics (curve) TIP142, TIP147
4/10 Doc ID 4132 Rev 8
3 Electrical characteristics (curve)
Figure 2. Safe operating area
!-V
#%
66
#
)#-!8#/.4
$#/0%2!4)/.
)!
TIP142, TIP147 Test circuits
Doc ID 4132 Rev 8 5/10
4 Test circuits
Figure 3. Resistive load switching test circuit (NPN type)
1. Fast electronic switch
2. Non-inductive resistor
Figure 4. Resistive load switching test circuit (PNP type)
1. Fast electronic switch
2. Non-inductive resistor
Package mechanical data TIP142, TIP147
6/10 Doc ID 4132 Rev 8
5 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
TIP142, TIP147 Package mechanical data
Doc ID 4132 Rev 8 7/10
Table 5. TO-247 mechanical data
Dim.
mm.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70
Package mechanical data TIP142, TIP147
8/10 Doc ID 4132 Rev 8
Figure 5. TO-247 drawing
0075325_G
TIP142, TIP147 Revision history
Doc ID 4132 Rev 8 9/10
6 Revision history
Table 6. Document revision history
Date Revision Changes
15-Oct-2007 6 Package change from SOT-93 to TO-247.
12-May-2010 7 Technology change from epitaxial base to planar base island.
19-Apr-2012 8 Added: Figure 2: Safe operating area
Updated: mechanical data
TIP142, TIP147
10/10 Doc ID 4132 Rev 8
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