VS-20TQ035S-M3, VS-20TQ040S-M3, VS-20TQ045S-M3
www.vishay.com Vishay Semiconductors
Revision: 02-Nov-17 1Document Number: 94931
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 20 A
FEATURES
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• Designed and qualified according to JEDEC®-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-20TQ... Schottky rectifier series has been optimized
for very low forward voltage drop, with moderate leakage.
The proprietary barrier technology allows for reliable
operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) 20 A
VR35 V, 40 V, 45 V
VF at IF0.51 V
IRM 105 mA at 125 °C
TJ max. 150 °C
EAS 27 mJ
Package D2PAK (TO-263AB)
Circuit configuration Single
Base
cathode
N/C Anode
13
2
D2PAK (TO-263AB)
1
2
3
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 20 A
VRRM Range 35 to 45 V
IFSM tp = 5 μs sine 1800 A
VF20 Apk, TJ = 125 °C 0.51 V
TJRange -55 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-20TQ035S-M3 VS-20TQ040S-M3 VS-20TQ045S-M3 UNITS
Maximum DC reverse voltage VR35 40 45 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5 IF(AV) 50 % duty cycle at TC = 116 °C, rectangular waveform 20
A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
VRRM applied
1800
10 ms sine or 6 ms rect. pulse 400
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 4 A, L = 3.40 mH 27 mJ
Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 4A
VS-20TQ035S-M3, VS-20TQ040S-M3, VS-20TQ045S-M3
www.vishay.com Vishay Semiconductors
Revision: 02-Nov-17 2Document Number: 94931
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1 VFM (1)
20 A TJ = 25 °C 0.57
V
40 A 0.73
20 A TJ = 125 °C 0.51
40 A 0.67
Maximum reverse leakage current
See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR
2.7 mA
TJ = 125 °C 105
Maximum junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 1400 pF
Typical series inductance LSMeasured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg -55 to 150 °C
Maximum thermal resistance,
junction to case RthJC DC operation
See fig. 4 1.50
°C/W
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth, and greased 0.50
Approximate weight 2g
0.07 oz.
Mounting torque minimum 6 (5) kgf cm
(lbf in)
maximum 12 (10)
Marking device Case style D2PAK (TO-263AB)
20TQ035S
20TQ040S
20TQ045S
0.1
10
100
1
1000
IF - Instantaneous
Forward Current (A)
VFM - Forward Voltage Drop (V)
0.2 0.6 1.2 1.6 1.81.40.80.40 1.0
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
0.001
1
100
10
0.1
0.01
1000
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
515 30
40 45
352010025
TJ = 125 °C
TJ = 150 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
VS-20TQ035S-M3, VS-20TQ040S-M3, VS-20TQ045S-M3
www.vishay.com Vishay Semiconductors
Revision: 02-Nov-17 3Document Number: 94931
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
100
10 000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
10 20 30 40050
TJ = 25 °C
0.001
0.1
0.01
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
10 100
Single pulse
(thermal resistance)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
115
145
135
125
155
Allowable Case Temperature (°C)
IF(AV) - Average Forward Current (A)
52025
30
10015
20TQ
RthJC (DC) = 1.50 °C/W
DC
0
8
6
4
2
18
16
14
12
10
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
515 302010025
D = 0.08
D = 0.17
D = 0.25
D = 0.33
D = 0.50
RMS limit
DC
VS-20TQ035S-M3, VS-20TQ040S-M3, VS-20TQ045S-M3
www.vishay.com Vishay Semiconductors
Revision: 02-Nov-17 4Document Number: 94931
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 8 - Unclamped Inductive Test Circuit
ORDERING INFORMATION TABLE
100
1000
10 000
IFSM - Non-Repetitive Surge Current (A)
tp - Square Wave Pulse Duration (µs)
100 10 000
100010
At any rated load condition
and with rated VRRM applied
following surge
Current
monitor
High-speed
switch
D.U.T.
Rg = 25 Ω
+
Freewheel
diode Vd = 25 V
L
IRFP460
40HFL40S02
035 = 35 V
040 = 40 V
045 = 45 V
2- Current rating (20 A)
3- Package: T = TO-220
4- Schottky “Q” series
5- Voltage ratings
- S = D2PAK
6
7- None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
8
1- Vishay Semiconductors product
Device code
51 32 4 6 7 8
VS- 20 T Q 045 S TRL -M3
- -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
VS-20TQ035S-M3, VS-20TQ040S-M3, VS-20TQ045S-M3
www.vishay.com Vishay Semiconductors
Revision: 02-Nov-17 5Document Number: 94931
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-20TQ035S-M3 50 1000 Antistatic plastic tubes
VS-20TQ035STRR-M3 800 800 13" diameter reel
VS-20TQ035STRL-M3 800 800 13" diameter reel
VS-20TQ040S-M3 50 1000 Antistatic plastic tubes
VS-20TQ040STRR-M3 800 800 13" diameter reel
VS-20TQ040STRL-M3 800 800 13" diameter reel
VS-20TQ045S-M3 50 1000 Antistatic plastic tubes
VS-20TQ045STRR-M3 800 800 13" diameter reel
VS-20TQ045STRL-M3 800 800 13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?96164
Part marking information www.vishay.com/doc?95444
Packaging information www.vishay.com/doc?96424
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 08-Jul-15 1Document Number: 95046
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
D2PAK
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC® outline TO-263AB
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
c
B
Detail A
c2
AA
A
± 0.004 B
M
A
Lead tip
(3)
(3)
View A - A
(E)
(D1)
E1
B
H
A1
Detail “A”
Rotated 90 °CW
Scale: 8:1
L
Gauge
plane
0° to 8°
L3
L4
Seating
plane
Section B - B and C - C
Scale: None
(4)
(4)
(b, b2)
b1, b3
(c) c1
Base
Metal
Plating
Conforms to JEDEC
®
outline D
2
PAK (SMD-220)
132
D
C
A
L2
E
(2)(3)
(2)
4
H
BB
2 x b
2 x b2
L1
0.010 AB
MM
(3)
e
2 x
Pad layout
MIN.
11.00
(0.43)
MIN.
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
2.32
(0.08)
17.90 (0.70)
15.00 (0.625)
2.64 (0.103)
2.41 (0.096)
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Revision: 01-Jan-2019 1Document Number: 91000
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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