BSS138K — N-Channel Logic Level Enhancement Mode Field Effect Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSS138K Rev. A2 1
May 2010
BSS138K
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Pb Free/RoHS Compliant
• Green Compound
• ESD HBM=2000V as per JEDEC A114A ; ESD CDM = 2000V as per JEDEC C101C
Absolute Maximum Ratings * TA = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device maybe impaired.
Thermal Characteristics
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size
Symbol Parameter Value Units
VDSS Drain-Source Voltage 50 V
VGSS Gate-Source Voltage ±12 V
ID Drain Current Continuous
Pulsed
0.22
0.88 A
TJOperating Junction Temperature Range -55 to +150 °C
TSTG Storage Temperature Range -55 to +150 °C
Symbol Parameter Value Units
PDTotal Device Dissipation
Derating above TA = 25°C
350
2.8
mW
mW/°C
RθJA Thermal Resistance, Junction to Ambient * 350 °C/W
S
D
G
SOT - 23
Marking : SK
BSS138K — N-Channel Logic Level Enhancement Mode Field Effect Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSS138K Rev. A2 2
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS= 0V, ID=10µA50 V
BVDSS
TJ
Breakdown Voltage
Temperature Coefficient ID=250µA, Referenced to 25°C0.11V/°C
IDSS Zero Gate Voltage Drain Current VDS= 50V, VGS= 0V 0.1 µA
IGSS Gate-Body Leakage VGS= ±12V, VDS= 0V
VGS= ±10V, VDS= 0V
VGS= ±5V, VDS= 0V
±1
±0.5
±0.05
µA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA0.6 1.2V
VGS(th)
TJ
Gate Threshold Voltage
Temperature Coefficient ID= 1mA, Referenced to 25°C-1.4mV/°C
RDS(ON) Static Drain-Source
On-Resistance
VGS = 1.8V, ID = 50mA,
VGS = 2.5V, ID = 50mA,
VGS = 5V, ID = 50mA,
2.5
2.0
1.6
Ω
ID(ON) On-State Drain Current VGS= 10V, VDS= 5V 0.2 A
gFS Forward Transconductance VDS = 10V, ID = 200mA 200 mS
Dynamic Characteristics
Ciss Input Capacitance
VDS = 25V, VGS= 0V, f = 1.0MHz
58
Coss Output Capacitance 9.75 pF
Crss Reverse Transfer Capacitance 5.2
RGGate Resistance VDS= 5V, VGS= 10mV 281 Ω
Switching Characteristics
tD(ON) Turn-On Delay Time
VDD = 30V, ID = 0.29A,
VGS = 10V, RGEN = 6Ω
5
ns
trTurn-On Rise Time 5
tD(OFF) Turn-Off Delay Time 60
tfTurn-Off Fall Time 35
QgTotal Gate Change
VDS = 25V, ID = 0.2A,
VGS = 10V, IG = 0.1mA
2.4
nCQgs Gate-Source Change 0.5
Qgd Gate-Drain Change 0.5
Drain-Source Diode Characteristics and Maximum Ratings
Vsd
Drain-Source Diode
Forward Voltage VGS = 0V, IS = 115mA 1.2 V
BSS138K — N-Channel Logic Level Enhancement Mode Field Effect Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSS138K Rev. A2 3
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
Figure 3. On-Resistance Variation with
Temperature
Figure 4. On-Resistance Variation with
Gate-Source Voltage
Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with
Temperature
0246810
0.0
0.5
1.0
1.5
2.0
2V
3V
4V
5V
VGS = 10V
ID. DRAIN-SOURCE CURRENT(A)
VDS. DRAIN-SOURCE VOLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0
0.75
1.00
1.25
1.50
1.75
2.00
(Ω)
9V
8V
5V
6V
10V
7V
4V
4.5V
VGS = 3V
RDS(on),
DRANI-SOURCE ON-RESISTANCE
ID. DRAIN-SOURCE CURRENT(A)
-50 0 50 100 150
0.5
1.0
1.5
2.0
2.5
(Ω)
VDS = 10V
ID = 500 mA
RDS(on)
DRANI-SOURCE ON-RESISTANCE
TJ. JUNCTION TEMPERATURE(oC)
2.02.53.03.54.04.55.05.56.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS = 10V
75(oC) 125(oC) 150(oC)
25(oC)
TJ = -25(oC)
ID. DRAIN-SOURCE CURRENT(A)
VGS. GATE-SOURCE VOLTAGE (V)
-50 0 50 100 150
0.0
0.5
1.0
1.5
ID = 0.25 mA
ID = 1 mA
VDS = VGS
Vth, Gate-Source Threshold Voltage (V)
TJ. JUNCTION TEMPERATURE(oC)
BSS138K — N-Channel Logic Level Enhancement Mode Field Effect Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSS138K Rev. A2 4
Typical Performance Characteristics (Continue)
Figure 7. Reverse Drain Current Variation with
Diode Forward Voltage and Temperature
0.0 0.2 0.4 0.6 0.8 1.0
1
10
100
-55oC
VGS = 0 V
150oC
25oC
IS Reverse Drain Current, [mA]
VSD, Body Diode Forward Voltage [V]
BSS138K — N-Channel Logic Level Enhancement Mode Field Effect Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSS138K Rev. A2 5
Physical Dimensions
SOT - 23
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I49
