DE275-501N16A
RF Power MOSFET
Directed En ergy, Inc.
An
IXYS Company
Preliminary Data Sheet
VDSS = 500 V
ID25 = 16 A
RDS(on) = .5 Ω
ΩΩ
Ω
PDHS = 375 W
Symbol Test Conditions Maximum Ratings
VDSS TJ = 25°C to 150°C 500 V
VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 Tc = 25°C 16 A
IDM Tc = 25°C, pulse width limited by TJM 98 A
IAR Tc = 25°C 16 A
EAR Tc = 25°C 20 mJ
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,
Tj ≤ 150°C, RG = 0.2Ω
5 V/ns
IS = 0 >200 V/ns
PDHS Tc = 25°C
Derate 3.0W/°C above 25°C 375 W
PDAMB Tc = 25°C 3.0 W
TJ -55…+150 °C
TJM 150 °C
Tstg -55…+150 °C
TL 1.6mm (0.063 in) from case for 10 s 300 °C
Weight 2 g
dv/dt
RthJHS 0.33 K/W
Symbol Test Conditions Characteri stic Valu e s
TJ = 25°C unless otherwise specified
min. typ. max.
VDSS VGS = 0 V, ID = 3 ma 500 V
VGS(th) VDS = VGS, ID = 4 ma 2.5 5.5 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = 0.8 VDSS TJ = 25°C
VGS = 0 TJ = 125°C
50
1 µA
mA
RDS(on) .5
Ω
gfs VDS = 15 V, ID = 0.5ID25, pulse test 2 6 S
VGS = 15 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
Features
•Isolated Substrate
−high isolation voltage (>2500V)
−excellent thermal transfer
−Increased temperature and power
cycling capability
•IXYS advanced low Qg process
•Low gate charge and capacitances
−easier to drive
−faster switching
•Low RDS(on)
•Very low insertion inductance (<2nH)
•No beryllium oxide (BeO) or other
hazardous materials
A dvantages
•Optimized for RF and high speed
switching at frequencies to 100MHz
•Easy to mount—no insulators needed
•High power density
N-Channel Enhancement Mode
Avalanche Rated
Low Qg and Rg
High dv/dt
Nanosecond Switching
DRAIN
SG1 SG2
GATE
SD1 SD2
DE275-501N16A
RF Power MOSFET
Directed En ergy, Inc.
An
IXYS Company
Symbol Test Conditions Characteri stic Valu e s
(TJ = 25°C unless otherwise specified)
min. typ. max.
RG 0.3 Ω
Ciss 1800 pF
Coss VGS = 0 V, VDS = 0.8 VDSS(max),
f = 1 MHz 150 pF
Crss 45 pF
Td(on) 3 ns
Ton VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
RG = 0.2 Ω (External)
2 ns
Td(off) 4 ns
Toff 5 ns
Qg(on) 50 nC
Qgs VGS = 10 V, VDS = 0.5 VDSS
ID = 0.5 ID25 20 nC
Qgd 30 nC
Source-Drain Diode Charact eri stic Valu e s
(TJ = 25°C unless otherwise specified)
Symbol Test Conditions min. typ. max.
IS VGS = 0 V 6 A
ISM Repetitive; pulse width limited by TJM 48 A
VSD 1.5 V
Trr
200 ns
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2%
QRM IF = IS, -di/dt = 100A/µs,
VR = 100V
0.6
µC
IRM 4 A
Directed Energy, Inc. reserves the right to change limits, test conditions and dimensions.
DEI MOSFETS are covered by one or more of the following U.S. patents:
4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508
5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715
5,381,025 5,640,045
DE275-501N16A
RF Power MOSFET
Directed En ergy, Inc.
An
IXYS Company
501N16A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE
level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of
the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer
capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type re-
sponse necessary for a high power device model. The turn on delay and the turn off delay are ad-
justed via Ron and Roff.
Figure 1 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the DEI web site at
www.directedenergy.com/spice.htm
Net List:
SYM=POWMOSN
.SUBCKT 501N16A 10 20 30
* TERMINALS: D G S
* 500 Volt 16 Amp .5 ohm N-Channel Power MOSFET
* REVA 6-15-00
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 .2
DON 6 2 D1
ROF 5 7 .2
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 2.0N
RD 4 1 .5
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .5N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=5.8)
.MODEL D1 D (IS=.5F CJO=10P BV=100 M=.5 VJ=.7 TT=1N RS=10M)
.MODEL D2 D (IS=.5F CJO=450P BV=500 M=.4 VJ=.6 TT=10N RS=10M)
.MODEL D3 D (IS=.5F CJO=900P BV=500 M=.3 VJ=.3 TT=400N RS=10M)
.ENDS
56
7
8
4
10 DRAIN
30 SOURCE
20 GATE
Don
Dcos
D2crs
D1crs
Rds
Ron
Doff
Roff
Rd
Lg
Ld
Ls
M3
2
13
Directed Energy, Inc.
An IXYS Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: deiinfo@directedenergy.com
Web: http://www.directedenergy.com
Doc #9200-0222 Rev 1
© 2001 Directed Energy, Inc.
