BSM 300 GA 120 DN2 IGBT Power Module * Single switch * Including fast free-wheeling diodes * Package with insulated metal base plate Type VCE BSM 300 GA 120 DN2 BSM 300 GA 120 DN2 S IC Package Ordering Code 1200V 430A SINGLE SWITCH 1 C67076-A2007-A70 1200V 430A SSW SENSE 1 C67070-A2017-A70 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 k Values 1200 Unit V 1200 Gate-emitter voltage VGE DC collector current IC 20 A TC = 25 C 430 TC = 80 C 300 Pulsed collector current, tp = 1 ms ICpuls TC = 25 C 860 TC = 80 C 600 Power dissipation per IGBT W Ptot TC = 25 C 2500 Chip temperature Tj + 150 Storage temperature Tstg Thermal resistance, chip case RthJC 0.05 Diode thermal resistance, chip case RthJCD 0.125 Insulation test voltage, t = 1min. Vis Creepage distance C -40 ... + 125 K/W 2500 Vac - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - 1 http://store.iiic.cc/ sec 40 / 125 / 56 Oct-27-1997 BSM 300 GA 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage V VGE(th) VGE = VCE, IC = 12 mA 4.5 5.5 6.5 VGE = 15 V, IC = 300 A, Tj = 25 C - 2.5 3 VGE = 15 V, IC = 300 A, Tj = 125 C - 3.1 3.7 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) mA ICES VCE = 1200 V, VGE = 0 V, Tj = 25 C - 4 5.6 VCE = 1200 V, VGE = 0 V, Tj = 125 C - 16 - Gate-emitter leakage current nA IGES VGE = 20 V, VCE = 0 V - - 320 AC Characteristics Transconductance VCE = 20 V, IC = 300 A Input capacitance 124 nF - 22 - - 3.3 - - 1.2 - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S gfs Crss VCE = 25 V, VGE = 0 V, f = 1 MHz 2 http://store.iiic.cc/ Oct-27-1997 BSM 300 GA 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 300 A RGon = 3.3 Rise time - 100 200 - 110 220 - 600 800 - 80 120 tr VCC = 600 V, VGE = 15 V, IC = 300 A RGon = 3.3 Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 300 A RGoff = 3.3 Fall time tf VCC = 600 V, VGE = -15 V, IC = 300 A RGoff = 3.3 Free-Wheel Diode Diode forward voltage V VF IF = 300 A, VGE = 0 V, Tj = 25 C - 2.3 2.8 IF = 300 A, VGE = 0 V, Tj = 125 C - 1.8 - Reverse recovery time s trr IF = 300 A, VR = -600 V, VGE = 0 V diF/dt = -2500 A/s, Tj = 125 C Reverse recovery charge - 0.55 C Qrr IF = 300 A, VR = -600 V, VGE = 0 V diF/dt = -2500 A/s Tj = 25 C - 14 - Tj = 125 C - 40 - 3 http://store.iiic.cc/ Oct-27-1997 BSM 300 GA 120 DN2 Power dissipation Ptot = (TC) parameter: Tj 150 C Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 4 2600 W A 2200 Ptot IC 2000 t = 19.0s p 10 3 1800 1600 100 s 1400 10 2 1200 1000 1 ms 800 10 1 10 ms 600 400 200 DC 0 0 20 40 60 80 100 120 C 10 0 0 10 160 10 1 10 2 10 3 TC Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C Transient thermal impedance Zth JC = (tp) parameter: D = tp / T IGBT 10 0 500 K/W A IC V VCE 400 ZthJC 10 -1 350 10 -2 300 250 D = 0.50 10 200 -3 0.20 0.10 150 0.05 10 -4 100 single pulse 0.02 0.01 50 0 0 20 40 60 80 100 120 C 160 10 -5 -5 10 TC 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 http://store.iiic.cc/ Oct-27-1997 BSM 300 GA 120 DN2 Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 s, Tj = 25 C parameter: tp = 80 s, Tj = 125 C 600 600 A 500 IC 450 400 A 17V 15V 13V 11V 9V 7V 500 IC 450 400 350 350 300 300 250 250 200 200 150 150 100 100 50 50 0 17V 15V 13V 11V 9V 7V 0 0 1 2 3 V 5 0 VCE 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 600 A 500 IC 450 400 350 300 250 200 150 100 50 0 0 2 4 6 8 10 V 14 VGE 5 http://store.iiic.cc/ Oct-27-1997 BSM 300 GA 120 DN2 Typ. capacitances Typ. gate charge VGE = (QGate) parameter: IC puls = 300 A C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 2 20 V nF VGE 16 Ciss C 600 V 14 800 V 10 1 12 10 Coss 8 Crss 10 0 6 4 2 0 0 10 -1 0 200 400 600 800 1000120014001600 nC 2000 5 10 15 20 25 30 V VCE QGate 40 Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V, tp 1 ms, L < 20 nH ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 20 nH 2.5 12 ICpulsIC ICsc/IC di/dt = 1000A/s 3000A/s 5000A/s 8 di/dt = 1000A/s 3000A/s 5000A/s 1.5 6 1.0 4 allowed number of short circuit: <1000 time between short 2 circuit: >1s 0.5 0.0 0 200 400 600 800 1000 1200 V 1600 VCE 6 http://store.iiic.cc/ 0 0 200 400 600 800 1000 1200 V 1600 VCE Oct-27-1997 BSM 300 GA 120 DN2 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C t = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 3.3 par.: VCE = 600 V, VGE = 15 V, IC = 300 A 10 4 10 4 ns ns t tdoff t 10 3 10 3 tdoff tdon tr tr tdon tf 10 2 10 1 0 100 200 300 400 500 A IC tf 10 2 10 1 0 700 5 10 15 20 25 30 40 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C E = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 3.3 par.: VCE = 600V, VGE = 15 V, IC = 300 A 140 140 Eon mWs mWs Eon E E 100 100 80 80 Eoff Eoff 60 60 40 40 20 20 0 0 100 200 300 400 500 A IC 700 0 0 5 10 15 20 25 30 40 RG 7 http://store.iiic.cc/ Oct-27-1997 BSM 300 GA 120 DN2 Forward characteristics of fast recovery Transient thermal impedance Zth JC = (tp) parameter: D = tp / T reverse diode IF = f(VF) parameter: Tj Diode 10 0 600 A K/W 500 IF ZthJC 450 10 -1 400 350 Tj=125C Tj=25C 10 -2 300 D = 0.50 250 0.20 200 0.10 0.05 10 -3 150 0.02 100 0.01 single pulse 50 0 0.0 0.5 1.0 1.5 2.0 V 3.0 10 -4 -5 10 VF 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 8 http://store.iiic.cc/ Oct-27-1997 BSM 300 GA 120 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 420 g 9 http://store.iiic.cc/ Oct-27-1997 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM300GA120DN2 Anhang C-Serie Appendix C-series Gehause spezifische Werte Housing specific values Modulinduktivitat stray inductance module typ. LsCE 16 nH Gehausemae C-Serie Package outline C-series Appendix C-series http://store.iiic.cc/ Appendix_C-Serie_BSM300GA120DN2.xls 2001-09-20 Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschlielich fur technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes fur die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollstandigkeit der bereitgestellten Produktdaten fur diese Anwendung obliegt Ihnen bzw. Ihren technischen Abteilungen. In diesem Produktdatenblatt werden diejenigen Merkmale beschrieben, fur die wir eine liefervertragliche Gewahrleistung ubernehmen. Eine solche Gewahrleistung richtet sich ausschlielich nach Magabe der im jeweiligen Liefervertrag enthaltenen Bestimmungen. Garantien jeglicher Art werden fur das Produkt und dessen Eigenschaften keinesfalls ubernommen. 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