AE G CORP L?E D MM 0029426 0009871 5 my > Ww TELEFUNKEN electronic LL 4 1 50 Create Technologes Silicon Epitaxial Planar Diode T-03-097 Application: High speed switch Dimensions in mm Terminals are tin plated Ogs Dy =1,4 +01 Glass case SOD 80 MiniMELF Weight max. 0.1 g 8 18te Absolute maximum ratings Repetitive peak reverse voltage VaRM 50 Reverse voltage Va 50 Surge forward current t =1ps hsm 4 A Forward current I, 600 mA Average forward current V, 0 leay 300 mA Power dissipation Py 500 mW Junction temperature T, 200 C Storage temperature range Totg - 65....+ 200 C Maximum thermal resistance Junction ambient on PC board 50 mmx50 mmx1.6 mm Pasa 500 K/W T1.2/397.0588 E2 161 A E G CORP L7E D M@@ 0029424 co05a872 7 T-027-O9 Characteristics Min. Typ. Max. T= 25 C, unless otherwise specified Forward voltage f= 1mA, Ve 0.54 0.62 Vv = 10mA Ve 0.66 0.74 Vv = 50mA V. 0.76 0.86 Vv i= 100 mA V; 0.82 0.92 Vv 1,.= 200 mA Ve 0.87 1.0 Vv Reverse current Vv, =50V In 100 nA V,_ = 50 V, 7, = 150 C Ip 100 pA "Diode capacitance V, =0, f= 1 MHz, Vypo 50 mV c, 2.5 pF Reverse recovery time fp =l,= 10....100 mA, i,=0.1-1,,R, =100Q t. 4 ns t a6 5987 @ aa asve re Scattering limit 100 - mA Scattering limit 40 0. 0 04 08 1.2 1.6 V ye 162 50 150 C Fat pene Ser in mi tbdonarhonitadl dihaenebedteen 2 ay nwsdtShen tngivanl dE