Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20200C
Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited
1
General Description
High voltage dual Schottky rectifier suited for switch
mode power supplies and other power converters.
This device is intended for use in medium voltage
operation, and particularly, in high frequency circuits
where low switching losses and low noise are
required.
The MBR20200C is available in TO-220-3,
TO-220-3 (2) and TO-220F-3 packages.
Features
Low Forward Voltage: 0.9V @ 25°C
High Surge Capacity
• 150°C Operating Junction Temperature
20A Total (10A Per Diode Leg)
Guard-ring for Stress Protection
• Pb-free Package
Main Product Characteristics
IF(AV) 2×10A
VRRM 200V
TJ 150°C
VF(max) 0.9V
Mechanical Characteristics
Case: Epoxy, Molded
Epoxy Meets UL 94V-0 @ 0.125in.
Weight (Approximately): 1.9 Grams
Finish: All External Surfaces Corrosion
Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
Applications
Power Supply Output Rectification
• Power Management
• Instrumentation
Figure 1. Package Types of MBR20200C
TO-220F-3 TO-220-3 (Optional) TO-220-3 (2)
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20200C
Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited
2
Pin Configuration
T Package
(TO-220-3) (Optional) (TO-220-3 (2))
1
2
3
A1
K
A2
TF Package
(TO-220F-3)
Figure 2. Pin Configuration of MBR20200 C (Top View)
Figure 3. Internal Structure of MBR20200C
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20200C
Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited
3
Ordering Information
MBR20200C -
Circuit Type
Part Number Marking ID
Package Lead Free Green Lead Free Green
Packing
Type
TO-220-3 (2) MBR20200CT-
E1
MBR20200CT-
G1
MBR20200CT-
E1
MBR20200CT-
G1 Tube
TO-220F-3 MBR20200CTF-
E1
MBR20200CTF
-G1
MBR20200CTF-
E1
MBR20200CTF-
G1 Tube
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Products with “G1” suffix are available in green packages.
Absolute Maximum Ratings ( Per Diode Leg) (Note 1)
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dPD/dTJ <
1/θJA.
Parameter Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
200 V
Average Rectified Forward Current
(Rated VR) TC=133°C IF(AV) 10 A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20kHz) TC=130°C IFRM 20 A
Non Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Half Wave, Single
Phase, 60Hz)
IFSM 150 A
Operating Junction Temperature Range (Note 2) TJ 150
°C
Storage Temperature Range TSTG -65 to 150 °C
Voltage Rate of Change (Rated VR) dv/dt 10000
V/µs
ESD (Machine Model=C) > 400 V
ESD (Human Body Model=3B) > 8000 V
E1: Lead Free
G1: Green
Package
T: TO-220-3 (2)
TO-220-3 (Optional)
TF: TO-220F-3
Blank: Tube
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20200C
Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited
4
Recommended Operating Conditions
Parameter Symbol Condition Value Unit
TO-220-3/
TO-220-3 (2) 2.0
θJC Junction to Case
TO-220F-3 2.5
TO-220-3/
TO-220-3 (2) 60
Maximum Thermal Resistance
θJA Junction to
Ambient TO-220F-3 60
°C/W
Electrical Characteristics
Parameter Symbol Conditions Value Units
Maximum Instantaneous
Forward Voltage Drop
(Note 3)
VF IF=10A, TC=25°C 0.9 V
Rated DC Voltage, TC=125°C 6.0
Maximum Instantaneous
Reverse Current (Note 3) IR
Rated DC Voltage, TC=25°C 0.05
mA
Note 3: Pulse Test: Pulse Width=300µs, Duty Cycle≤2.0%.
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20200C
Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited
5
Typical Performance Characteristics
0.01
0.1
1
10
100
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VF, Instantaneous Forward Voltage (V)
IF, Instantaneous Forward Curr ent (A)
250C
1250C
1500C
Figure 4. Typical Forward Voltage Per Diode
0 20 40 60 80 100 120 140 160 180 200
0.01
0.1
1
10
100
1000
10000
IR, Reverse Current (µA)
VR, Reverse Vo ltage (V)
250C
1250C
1500C
Figure 5. Typical Reverse Current Per Diode
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20200C
Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited
6
Typical Performance Characteristics (Continued)
115 120 125 130 135 140 145 150 155 160
0
2
4
6
8
10
12
14
16
18
20
Average Forward Current (A)
Case Temperature (oC)
Figure 6. Average Forward Current vs. Case Temperature (Square, p er Diode)
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20200C
Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited
7
Mechanical Dimensions
TO-220-3 Unit: mm(inch)
(Optional)
14.230(0.560)
1.160(0.046)
0.813(0.032)
8.763(0.345)
2.540(0.100) 0.356(0.014)
2.080(0.082)
3°
7°
3.560(0.140)
7°
9.660(0.380)
0.550(0.022)
60°
0.381(0.015)
2.580(0.102)
60°
8.520(0.335)
1.500(0.059)
0.200(0.008)
1.850(0.073)
2.540(0.100)
0.381(0.015)
0.406(0.016)
3.380(0.133)
10.660(0.420)
4.060(0.160) 1.350(0.053)
27.880(1.098)
30.280(1.192)
9.520(0.375)
16.510(0.650)
4.820(0.190)
2.880(0.113)
1.760(0.069)
3.560(0.140)
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20200C
Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited
8
Mechanical Dimensions (Continued)
TO-220-3 (2) Unit: mm(inch)
3°
3°
3°
9.800(0.386)
10.200(0.402)
3.560(0.140)
3.640(0.143)
0.700(0.028)
0.900(0.035)
1.170(0.046)
1.390(0.055)
2.540(0.100)
REF 2.540(0.100)
REF
1.200(0.047)
1.400(0.055)
0.600(0.024)
REF
4.400(0.173)
4.600(0.181)
2.200(0.087)
2.500(0.098)
0.400(0.016)
0.600(0.024)
1.620(0.064)
1.820(0.072) 1.200(0.047)
1.400(0.055)
3.000(0.118)
REF
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20200C
Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited
9
Mechanical Dimensions (Continued)
TO-220F-3 Unit: mm(inch)
2.790(0.110)
4.500(0.177)
IMPOR TANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility fo r use of any its products for any
particular purpose, nor does BCD Semiconductor Man ufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
- Wafer Fab
Shanghai SIM-BCD Semiconductor Manufacturing Limited
800, Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
BCD Semiconductor Manufacturing Limited
MAIN SITE
REGIONAL SALES OFFICE
Shenzhen Office
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office
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Tel: +86-755-8826 7951
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Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
BCD Semiconductor Manufacturing Limited
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
- Wafer Fab
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
800 Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
MAIN SITE
REGIONAL SALES OFFICE
Shenzhen Office
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office
Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,
China
Tel: +86-755-8826 7951
Fax: +86-755-8826 7865
Taiwan Office
BCD Semiconductor (Taiwan) Company Limited
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Taiwan
Tel: +886-2-2656 2808
Fax: +886-2-2656 2806
USA Office
BCD Semiconductor Corp.
30920 Huntwood Ave. Hayward,
CA 94544, USA
Tel : +1-510-324-2988
Fax: +1-510-324-2788
- Headquarters
BCD Semiconductor Manufacturing Limited
No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China
Tel: +86-21-24162266, Fax: +86-21-24162277