ky SGS-THOMSON MICROELECTRONICS IRFP240 IRFP240FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Voss Rosjon) lb IRFP240 200 V 0.189 20A IRFP240F1 200 V 0.18 2 13 A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100C ISOLATED PACKAGE UL RECOGNIZED, ISOLATION TO 4000V DC APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) MOTOR CONTROL, AUDIO AMPLIFIERS INDUSTRIAL ACTUATORS DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT 4 YS 3 2 1 TO-218 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM D (2) G (1) s (3) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit | IRFP240 IRFP240FI Vos Drain-source Voltage (Vas = 0) 200 Vv Vocr |Drain- gate Voltage (Ras = 20 kQ) 200 Vv Vas Gate-source Voitage + 20 Vv |p Drain Current (cont.) at T. = 25 C 20 13 A Ip Drain Current (cont.) at T; = 100 C 12 8 A | lpm(e) [Drain Current (pulsed) 80 80 A Prot Total Dissipation at T. = 25 C 150 60 Ww Derating Factor 1.2 0.48 wc | Tstg Storage Temperature -65 to 150 C Tj Max. Operating Junction Temperature 150 C (e) Pulse width limited by safe operating area March 1992 WUT 263IRFP240/ FI THERMAL DATA [ To-218 | ISOWATT218 Rthy-case [Thermal Resistance Junction- -case Max 0.83 2.08 | C/W | Rihy-amo [Thermal Resistance Junction-ambient Max C/W Rinc-s , Thermal Resistance Case-sink Typ j C/W Ty iMaximum Lead Temperature For Soldering Purpose | C AVALANCHE CHARACTERISTICS | sym Symbol oy Parameter , - Max Value Unit lar Avalanche Current, Repetitive or Not- Repetitive 20 A (pulse width limited by Tj max, 5 < 1%) _ __ | Single Pulse Avalanche Energy 50 mJ _[(starting | T, = 25 C, Ip = lan, Vop = 25 V) _ po | Repetitive Avalanche Energy 12 mJ _ | (pulse se width limited by T; max, 6 < 1%) _ . _ | Avalanche Current, Repetitive or Not-Repetitive 12 A (Te = 100 C, pulse width limited by T; max, 8 < 1%) ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF [ symbol po - Parameter _ | - Test Conditions | Min. Typ. | Max. | Unit Vieross |Drain-source Ip = 250 HA Ves = 0 200 Vv _ Breakdown Voltage | loss "Zero Gate Voltage /Vos = = Max Rating 250 WA Drain | Current (Vas = 0) | Vos = Max Ratingx 0.8 T. = 125 C 1000 uA lass |Gate-body Leakage |[Vas = + 20 V +100! nA | [Current (Vos= 9) . ee | ON (*) Symbol_ Parameter Test Conditions Min. | Typ. | Max. Unit Vestn) _ 'Gate Threshold Id Voltage Vos = = = Ves Ip = 250 pA 2 4 Vv Roston) |Static Drain- source On [Ves = 40V_ Ip =104A 0.18 Q Resistance i Ipteny On State Drain Current Vos. > Ipion) X Rosionymax x Vos = =10V 20 A DYNAMIC Symbol Parameter Test Conditions | Min. | Typ. | Max. | Unit is (*#) |Forward Vos > Ip(on) X Rostonymax Ip =10A | 6.7 Ss ____|Transconductance Ciss Input Capacitance Vos=25V f=1MHz Vas=0 2300 pF Cass Output Capacitance 400 pF Crss Reverse Transfer 150 pF | _lCapacitance J 2/7 a i SGS-THOMSON MICROELECTROMICS 264"RFP 240/""1 ELECTRICAL CHARACTERISTICS (continued) SWITCHING RESISTIVE LOAD Symbol Parameter Test Conditions Min. | Typ. | Max. Unit taton) Turn-on Time Voo=100V In=20A 50 5 ns tr Rise Time Re =9.12 Ves=10V 90 120 ns ta(ott) Turn-off Delay Time (see test circuit) 85 110 ns tt Fall Time 60 80 ns Qg Total Gate Charge In=20A Ves =10V 65 85 nc Vpp = Max Rating x 0.8 (see test circuit) _ SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min, Typ. Max. Unit Isp Source-drain Current 20 A Ispm(*}) |Source-drain Current 80 A (pulsed) a. fAR? ' Vsp () | Forward On Voltage Isp = 20 A Vos =0 1.5 Vv trr Reverse Recovery Isp = 20A_ di/dt = 100 A/us 260 ns Time Va = 100 V Tj = 150 C : On Reverse Recovery \ 2 yc Charge | | (*) Pulsed: Pulse duration = 300 ps, duty cycle 1.5% (e) Pulse width limited by safe operating area Safe Operating Area for TO-218 Package Safe Operating Area for ISOWATT218 Package GC1934* Ip(A) Ip(A) 4 2 2 102, 107, 6 6 4 4 2 2 10's to's 6 8 4 ; OPERATIO ; D.C. ION WC. TI 10, A 10, D.C. OPERATION 6 6 4 4 2 Zz 107! 107" 100 0! 10? Vos (V) 10 0 0? Vps (V) 3/7 ~ Gy ean 5IRFP240/Fl Thermal Impedance for TO-218 Package K 10 Zin = kK Rinse 1 6=1)/t 107 0.05 1 SINGLE PULSE 10? 1075107 107 107 107" t, (s) Derating Curve for TO-218 Package Pia (W) 120 80 40 0 50 100 Tegse (C) Output Characteristics Ip (A) 24 Thermal Impedance for ISOWATT218 Package 0.05 0.02 Q.01 1072 SINGLE PULSE L. r ~ tp 1073 1074 107 1027 107' = 10 t, (s) Derating Curve for ISOWATT218 Package Pra (W) 60 4D 20 0 50 100 Tease (C) Output Characteristics 601922) Ip (A) Vgs =10 BY 24 18 18 12 12 6 6 5V 5V 0 1 2 3 4 Vos (V) 0 20 40 60 BC Vpe () a7 k SGS-THOMSON J4 micRORLEcTRONICS 266IRFP240/Fl Transfer Characteristics Ip (A) ; T)=150C 10 Vos >| pcon) X Rps(on)mex tov! 0 2 4 6 8 Vos () Static Drain-source On Resistance Roscon (a) 0.3 0.25 0.2 0.15 0.05 0 4 8 12 16 20 Ip(A) Gate Charge vs Gate-source Voltage Ves (V) Vos =160V 0 20 40 60 Q,(nC) SGS-THOMSON MICHORLECTROBICS iy Transconductance Sts (Ss) 20 Vos >| pon) * Rostan}max Tj=-55C 0 5 10 15 20 Ip(A) Maximum Drain Current vs Temperature Ip (A) 24 20 0 50 100 Te (C) Capacitance Variations C(pF) 3500 3000 2500 2000 1500 1000 500 0 25 50 75 Vos{) 5/7 267IRFP240/FI Normalized Breakdown Voltage vs Temperature Vieryoss (norm) 1.2 Normalized On Resistance vs Temperature Roston) norm 2.0"REP 240)" Gate Charge Test Circuit scos9s9 soso09. 77 ag 8 BION OM