© 2010 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 100 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ 100 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 110 A
IDM TC= 25°C, Pulse Width Limited by TJM 300 A
IATC= 25°C 110 A
EAS TC= 25°C 3 J
PDTC= 25°C 600 W
TJ -55 to +150 °C
TJM +150 °C
Tstg -55 to +150 °C
TL1.6mm (0.063in) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-247) 1.13/10 Nm/lb.in.
Weight TO-247 6.0 g
TO-268 4.0 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 100 V
VGS(th) VDS = VGS, ID = 250μA 2.5 4.5 V
IGSS VGS = ±20V, VDS = 0V ±100 nA
IDSS VDS = VDSS, VGS = 0V 5 μA
TJ = 125°C 50 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 18 mΩ
LinearL2TM Power
MOSFET w/ Extended
FBSOA
IXTH110N10L2
IXTT110N10L2
DS100235(01/10)
VDSS = 100V
ID25 = 110A
RDS(on) ≤≤
≤≤
≤ 18mΩΩ
ΩΩ
Ω
Advance Technical Information
N-Channel Enhancement Mode
Guaranteed FBSOA
Avalanche Rated
Features
zDesigned for Linear Operation
zInternational Standard Packages
zAvalanche Rated
zIntegrated Gate Resistor for Easy
Paralleling
zGuaranteed FBSOA at 75°C
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zSolid State Circuit Breakers
zSoft Start Controls
zLinear Amplifiers
zProgrammable Loads
zCurrent Regulators
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXTH)
TO-268 (IXTT)
G
SD (Tab)
S
G
D (Tab)
D
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTH110N10L2
IXTT110N10L2
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 45 55 65 S
Ciss 10.5 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1585 pF
Crss 420 pF
RGi Gate Input Resistance 1.8 Ω
td(on) 28 ns
tr 130 ns
td(off) 99 ns
tf 24 ns
Qg(on) 260 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 52 nC
Qgd 106 nC
RthJC 0.21 °C/W
RthCS TO-247 0.21 °C/W
Safe Operating Area Specification
Characteristic Values
Symbol Test Conditions Min. Typ. Max.
SOA VDS = 80V, ID = 3.6A, TC = 75°C, tp = 5s 360 W
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2.2Ω (External)
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
e
∅ P
TO-247 (IXTH) Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-268 (IXTT) Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 110 A
ISM Repetitive, Pulse Width Limited by TJM 440 A
VSD IF = IS, VGS = 0V, Note 1 1.4 V
trr 230 ns
IRM 19.4 A
QRM 2.2 μC
IF = 55A, -di/dt = 100A/μs,
VR = 50V, VGS = 0V
© 2010 IXYS CORPORATION, All Rights Reserved
IXTH110N10L2
IXTT110N10L2
Fi g . 1. Ou tp ut C har acter i stics @ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
90
100
110
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
V
DS
- Volts
I
D
- Ampe res
V
GS
= 20V
14V
12V
10V
8
V
6
V
Fi g . 2. Exte n d ed Ou tpu t Ch ar acter i s ti cs @ T
J
= 25ºC
0
50
100
150
200
250
300
0 2 4 6 8 101214161820
V
DS
- V o lt s
I
D
- Ampe res
V
GS
= 20V
14V
12V
6
V
10
V
8
V
Fi g . 3. Ou tpu t C har acter i st i cs @ T
J
= 125º C
0
10
20
30
40
50
60
70
80
90
100
110
0 0.5 1 1.5 2 2.5 3 3.5 4
V
DS
- Volts
I
D
- A mperes
5
V
8V
6V
V
GS
= 20V
14V
12V
10V
Fig. 4. R
DS(on)
Normalized to I
D
= 55A Valu e vs.
Junction Temperature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-50-250 255075100125150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 110A
I
D
= 55A
Fig. 5. R
DS(on)
Normalized to I
D
= 55A Valu e vs.
Drain Current
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
3.8
0 50 100 150 200 250 300
I
D
- Amp e res
R
DS(on)
- Normalized
V
GS
= 10V
20V
- - - -
T
J
= 125ºC
T
J
= 25ºC
Fi g . 6. Maxi mu m D r ai n C ur r en t v s.
Case Temp er atur e
0
20
40
60
80
100
120
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTH110N10L2
IXTT110N10L2
Fig. 7. Input Admi ttance
0
20
40
60
80
100
120
140
160
180
200
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
0 20 40 60 80 100 120 140 160 180 200
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
40
80
120
160
200
240
280
320
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
V
SD
- V o lt s
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
0 50 100 150 200 250 300 350 400
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 50V
I
D
= 55A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capa citance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. Maxi mu m T r an si en t Ther mal I mp ed an ce
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
© 2010 IXYS CORPORATION, All Rights Reserved IXYS REF: T_110N10L2(8R)01-22-10
IXTH110N10L2
IXTT110N10L2
Fig. 13. Forward-Bias Safe Operating Area
@ T
C
= 25ºC
1
10
100
1,000
110100
V
DS
- Volt s
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
100µs
10ms
1ms
R
DS(on)
Limit
100ms
DC
25µs
Fig . 14. F or w ar d -Bi as Safe Op er a ti ng Are a
@ T
C
= 75ºC
1
10
100
1,000
110100
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 75ºC
Single Pulse
100µs
10ms
1ms
R
DS(on)
Limit
100ms
DC
25µs
