Technical Data Printed order nr. D GHS 30392 E BBC _ Silicon-Semiconductor BROWN BOVERI Com ponents Rectifier-Diodes A A P n K A = Anode K = Cathode a) K b) ip Year v Forward or Rsht conduction region * uae Vv, TO, Reverse or 7) blocking region BBC 866336 c) ig Forward current VE = Forward voltage drop V(TO)} Threshold voltage V(BR) = Break down voltage Vrsm = Non repetitive peak reverse voltage Figure 1: Diode a) Symbol, switch sign b) schematical constitution C) Vp - ip characteristic di _ 0,25 Ip, Iep ; ee Orr le = Twar eee ety a rr = Rev overy BBC 73.6056 current, peak value try = Reverse recovery time Qr, = Reverse recovered charge = Rate of rise of forward current Figure 2: Current wave form during commutation of the diode fram conduction state to the blocking state. (DIN 41781 page 10) Diodes are electric devices which conduct current in one direction i.e. offer a low resistance, while blocking i.e. offering a high resistance, in the reverse direction. Silicon, proving especially efficient in the higher power range, is preferrably employed for the production of semiconductor diodes. Fig. 1c shows the characteristic of a semiconductor diode in forward and reverse direction. In the standard range (type code DS..) the reverse voltage must not exceed even temporarily the non repetitive reverse voltage Vrgm. Avalanche diodes of the DSA range may temporarily be exposed to voltages of the order of the break down voltage V(r). Standard-type diodes are as a rule employed in circuits with line voltage supply (50-60 Hz). For use at higher frequencies (nearly off 1000 Hz) the dynamical properties during turn-on and turn-off should be taken into consideration. Fast recovery diodes of the DSD range have good dynamical properties. The criterion of the quickness of a diode is the reverse recovery time t,, indicated as time interval between the turn-off of the forward current and the instant a certain value of the reverse voltage is reached (see Fig. 2). On changing over from the conducting to the non-conducting state the charge carrier quantity stored in the junction give rise to an excessive inverse current, the so-called recovery reverse current Irr, immediately after passage of the current through zero. After the reverse recovery time has elapsed the reverse current is interrupted and finally decays to the steady state value of the inverse current. This phenomenon is known as hole storage effect and the integration of the current-time-area in reverse direction eventually gives the reverse recovered charge Qrr. Fast diodes featuring lower Q;; and trr values than standard-type diodes, their reverse power losses is lower, which again results in a higher efficiency. Type code of Brown Boveri diodes Example: DS A135-14A ps ____-__ Silicon diode (standard) A_. Avalanche type D_______. Fast recovery type | _____ Inverse polarity (cathode stud mounted) 35 -._ Current rating in ampere -14_ Voltage class (14 + 1400 V) A Modification Glossary of terms and symbols Terms and symbols largely correspond to the international recommendations ( *) VrRM 7 Repetitive peak reverse voltage, instantaneous value VE == Forward voltage drop, maximum value at rated IF = i issi . Prsm = Maximum reverse power surge for avalanche diodes at leRMS Maximum permissible forward current, RMS value RS O(va)max and 10 ws pulse width leEayvm = Mean forward current, 40 to 000 Hz of one halfsine wave Oy) = Virtual junction temperature at Yamb = 45C, convection cooling and Rinya: resP- 8(vJ)max = Maximum junction temperature Pcase 100C and Rinse Pamb = Ambient temperature lesm@ = Peak one cycle surge forward current, 10 ms, starting %case = Case temperature temperature #, Rihuc = Thermal resistance junction to case (VJ}max t ; . 9 = fust RthJA == Thermal resistance junction to ambient fi dt = Mt for fusing tery = Reverse recovery time at 26 C IR = Maximum reverse current at 9yvjymax and VRRM Qrr == Reverse recovered charge at 25 CStandard and Avalanche Diodes leave: ...1 up to il A BBC 726401 ERR Mataraceeancontnenntre Type VRRM | 'FRMS | 'FAVM | 'rsm_ | fizdt IR VF Prsm |? Rthuc |Rthya | Weight | Outline (ref. ip) |@ (Vmax Standard Avalanche v A A A As mA Vv kw c 2CAW {C/W |g Nr. 4.N 4002 100 1,6 1 27 3,7 03 {S14 175 _ 60 0,4 1 4003 ~ 200 (amb (1A) 4004 400 <750C) 4005 _ 600 4006 800 4007 1000 DS 0,9-04 A 400 5 2 50 42 <1 <i2 1,6 150 - 38 0.8 2 ~07 A ~ 700 (1,2)@ (3 A) (80) @ ALA DSA 0,9-11A | 1100 4A -14A | 1400 AGA -16A | 1600 8A -18 A **/| 1800 DS 1,2-04A _ 400 7 2,5 60 18 <1 <1,3 1,7 150 37 1,5 3 -07 A _ 700 (1,3) @ (6A) (75) @ ATA DSA1,2-11A | 1100 ASA 4A | 1400 6A ~16A | 1600 8 A** -18 A **| 1800 DS 1,8-04A 400 7 2,5 60 18 <1 S13 1,7 150 33 2,2 4 ~07 A _ 700 (1,7) @ (6A) (54) @ 1A DSA 1,8-11A | 1100 -14A -14A | 1400 -16 A -16A | 1600 ABA ** -18 A **| 1800 DS2 -04A 400 7 3 100 50 St < 1,25 2,5 150 30 2,5 5 -O7 A _ 700 (1,5) (7 A) (75) @ 1A DSA2 -11A | 1100 4A -14A | 1400 6A -16A | 1600 AB A** -18 A **| 1800 DS6 -04A 400 16 10 140 100 <2 < 1,6 3,4 150 <3 ~ 5 6 07 A _ 700 (30 A) 1A DSA6 -11A_ | 1100 4A -14A | 1400 6A -16A | 1600 -18A** -18 A **| 1800 DS9 -04A ~ 400 18 11 200 200 <2 <1,4 45 150 <2 J 5 6 07 A _ 700 (36 A) 1A DSA9 -11A_ | 1100 414A 4A | 1400 -16A ~16A | 1600 18 A** -18 A **| 1800 ** Delivery time on request 8 Only applies to avalanche diodes The values in brackets apply to natural air cooling, when mounted on prints Dimensions in mm 1a ae A = Anode, K = Cathode bean 7, 51 1 } ll 2 > 3 4 fe. 75 5 2 +} | ger 0 305 } _ Le fs) <a a wy 1. \3 Yt t Tr Se 1 ort 14 ree h x BBC 90392c g = & +] et 0,8 BBC 90384 08 | 0,5 T6402 BBC 736051 1N4002- - -4N4007 DS 0,9, DSA 0,9 DS 1,2, DSA 1,2 DS 1,8, DSA 1,8 DS 2, DSA2 D142 DSD 2 BA 707361200Standard and Avalanche Diodes lEAVM: 12.29 up to 80 A Type VaRM_ | 'FRMS | 'Favm | FSM | fiat ir VE Prsm |? Rthsc | Weight | Outline (ref. ip) |@ (Vmax Standard Avalanche Vv A A A As mA Vv kW C oCciW Ig Nr DS 17 -02A 200 40 25 250 310 <2 < 1,36 7 180 <15 | 6 7 and o4A 400 (55 A) DSI? oF a _ 700 1A DSA 17 -11A 1100 4A and = 444A 1400 -16 A* DSAI 17 16 as 1600 ~18 A** -18 A** 1800 DS 22 -04 A 400 65 33 420 1000 <4 <18 9,5 150 <1 15 8 7A 700 (120 A) ~11A DSA 22 -11A 1100 4A 4A 1400 6A ~16A 1600 -18 A** -18 At* 1800 DS 25 -01A _ 75 48 25 260 260 <6 < 1,4 175 <0,8 {10 9 and 2A _ 150 (90 A) DSI 25 a3 A _ 300 -05 A 450 -06 A 600 DS 35 -02 A 200 80 42 600 1800 S2 S155 | 11 150 S09 | 15 10 and -04A 400 (150 A) DSI 35 5 9 700 1A DSA 35 -11A 1100 -14A and -14A 1400 -16 A* DSA! 38 16 a+ 1600 18 A 18 A** 1800 DS 42 -04A ~ 400 100 60 800 =| 3200 <4 S17 18 150 <06 | 33 1 ~07 A 700 (200 A) ATA DSA 42 -11A 1100 -14A -14A 1400 -16 A 6A 1600 -18 A** -18 A** 1800 DS 80 -04A 400 175 80 1800 | 16200 <6 < 1,4 28 150 <0,5 | 130 12 and = 07 A 700 (350 A) DSI 80 is, DSA 80 -11A 1100 A4A and 4A 4400 -16 A* DSAI 80 15 ay 1600 18 A** -18 A** 1800 * With inverse polarity delivery time on ** Delivery time on request @ Only applies to avalanche diodes Dimensions in mm request 6 poop: 0,8? aes K 5 ize : y oe 4 wat ___if _ Utne 4 wot | MG DS 6 DS 9g DS 17 DSI 17 DSA6 DSA9 DSA17_ DSAi 17 DSD 17 A = Anode, K = Cathode psi SAL A BRC 90413 os a Be a =. ~ DS DST 7 4 K * 12,7z 10 D15,9 4: 0,f-} Bac 79 7099 BAC 697538 b DS 25 DSI 25 DS 35 DSI 35 DSA 35 DSAI 35 DSD 35Standard and Avalanche Diodes INVIVE ... 10 up to 420 A Type VreM |'FRMS | 'FAVM | 'rFsm_ | /iedt IR YF Prsm |? Rthuc | Weight | Outline (ref. if) @ (Vmax Standard Avalanche Vv A A A As mA Vv kW c SCIW |g Nr. DS 110 -04A _ 400 250 110 2800 39 000 <6 = 1,4 35 150 0,35 | 130 12 and = -o7 A ~ 700 (500 A) Ds! M044 A DSA 110 -11A 1100 4A and -14A 1400 ct ~16 At PSAI N10 tg As 1600 18 A** 18 At* 1800 DS 250 -04 F ** - 400 600 250 4300 90000 | <30 |<19 40 140 S012 | F=340 | F=13 and ~ +e _ DSI 250 07 F , 700 (1200 A) -l1F DSA 250 -11 F 1100 = a 4F YP land tar 1400 P4650 |= 14 L DSAI 250 resp. -17 F* -17 F* L 1700 -20 F * -20 F* 2000 -23 F* -23 F* 2300 _ DSA 251 -26 G 2600 600 250 4300 90 000 < 30 < 2,04 40 140 <= 0,08 | 390 15 -29G 2800 (600 A) -32G 3200 _ -38 G 3800 -44G 4400 -50 G 5000 DS 409 -04 F** _ 400 785 4006 8000 320 000 <= 30 <= 1,45 40 140 <= 0,08 | 340 13 -07 F** 700 (1500 A) -11F DSA 400 -11 F 1100 -14F -14F 1400 -17 F -17 F 1700 -20 F ~-20 F 2000 ~23 F -23 F 2300 _ DSA 401 -26 G 2600 785 300 6000 180 000 <= 30 2,3 40 140 < 0,08 | 390 15 _ -29G 2800 (1600 A) _ -32G 3200 -- -38 G 3800 - -44G 4400 _ -0G 5000 DSA 403-38 G res 3800 _ 370 7800 300 000 <= 30 < 2,4 50 140 <2 0,06 | G=445 | G=16 _ ~44 GL P- | 4400 (1800 A) -50 G 5000 L=715 | L-=17 _ DSA 405-38 A 3800 _ 420 7800 300 000 <= 30 2,4 50 140 S 0,05 | 250 18 -44A 4400 (1800 A) _ -50A 5000 * With inverse polarity delivery time on request ** Delivery time on request @ Only applies to avalanche diodes Dimensions in mm A = Anode, K = Cathode 1 2 +66 1 3 ~783r DS Sr bs Ba BSa ee oe bso Ber d Ms 4 25 mm? a 4 K wo 2 g k | 1 swear t at 3 2 & A PE M12" a 5.54 BBC 707365/1b BCC 697560a DS 42 DS 80 DSI 80 DS 110 DSI 110 DS 250F DSI 250F DS 400F DS 250L DSI 250L DSA 42 DSA 80 DSAI 80 DSA 110 OSA! 110 DSA 250F DSAI 250F DSA 400 F DSA 250 L DSAI 250 L DSD 250Avalanche Diodes INVIVE ...500 up to 840A Type VRRM 'FavM | 'Fsm | fide IR VE Prsm | (vJjmax | Rthuc Weight | Outline (ref. ig) Avalanche v A A Ats mA v kW C CW g Nr. DSA 503-23 G 2300 500 10300 | 530.000 < 30 <17 50 140 < 0,06 G=445 G=16 -26 G resp. 2600 (1800 A) -29G L 2900 L=715 L=17 -32G 3200 DSA 603-11 G 1100 600 12600 | 800000 < 30 < 1,36 50 140 < 0,06 G@=445 G=16 4G resp. 1400 (1800 A) 7G L 1700 L=715 L=17 -20G 2000 DSA 605-23 A 2300 560 10300 | 530000 < 30 <17 50 140 < 0,05 250 18 -26 A 2600 (1800 A) -29.A 2900 -32A 3200 DSA 607-38 A 3800 590 7800 | 300000 < 30 S24 50 140 < 0,04 200 19 (1800 A) DSA 705-11 A 4100 680 12600 | 800000 < 30 < 1,35 50 140 < 0,05 250 18 ASA 1400 (1800 A) ATA 1700 -20A 2000 DSA 707-23 A 2300 710 10300 | 530000 < 30 <17 50 140 < 0,04 200 19 -26 A 2600 (1800 A) -29A 2900 82 A 3200 DSA 807-11 A 4100 840 12600 | 800000 < 30 < 1,35 50 140 < 0,04 200 19 4A 1400 (1800 A) 7A 1700 -20A 2000 Dimensions in mm A = Anode, K = Cathode 15 17 BBC 736052 BBC 736052 BBC 7360530 DSA 251 G DSA 403 G DSA 403 L DSA 401 G DSA 503 G DSA 503 L DSA 603 G DSA 603 LFast Recovery Diodes lEAVM: ...1 up to 350 A Preliminary data Type VRRM | 'FAVM | 'Fsm_ | fitdt | 'R VE tre at ip \ Qi | Pvuymax | Rthya | Rthuc | Weight | Outline (ref. if) and Vv A A Avs mA Vv us divdt J pAs [C ocw |ecw lg Nr. DSD 1,2-01A 100 1 60 1) <1 S13 < 0,3 1A 0,3 | 150 75 18 3 702 A 200 (3 A) 10 A/us -04A 400 -06 A 600 DSD2 -01A 400 1,2 100 50 | <4 <443 <0,3 12A 0,3. | 180 75 25 5 702 A 200 3,5 10 A/us -04 A 400 (3.5 A) -06 A 600 -08 A 800 <05 0,75 10.4 1000 DSD 17 -01A 400 16 250 310 | <2 <14,7 < 0,3 416A 0,75 | 150 - S17 6 7 -02 A 200 50 A 50 A/us -04 A 400 (60 A) 07 A 700 1A 1100 0,5 2 4A 7400 <i 76 DSD 35 -01A 400 28 400 g00 | <3 S 1,65 <03 28 A 15 | 150 - <1 15 10 ~02 A 200 85 A 50 A/us -04 A 400 (85 A) a -07 A 700 __ ATA 1100 S05 4 =14A 1400 <1 16 DSD 250-08 A* 800 | 250 3800 | 72000 | < 80 S16 500 A 100 150 < 0,12 | 550 14 10A 1000 (500 A) 25 Alus 2A 1200 4A 1400 -16A* | 4600 DSD 304-06 A an 2200 | 24000 | < 16 $13 - 300 A 25 125 ~ S0,09 | 62 20 oe A 0 Wo = Id) = (400 A) 50 A/us 1A | 4100 65 C} 7c 12 A 1200 * on request Detailed data sheets with diagrams covering the whole range of devices are available. Write for further informations to: BBC BROWN BOVERI BROWN, BOVERI & CIE AKTIENGESELLSCHAFT MANNHEIM Geschaftsbereich Halbleiter und Stromrichter D-6840 Lampertheim - Postfach 200 Tel. (06206) 5031 - Telex 04-65 727 Klassifikations-Nr. 0701/541 GHS 1617 E Printed in the Federal Republic of Germany Dimensions in mm 18 DSA 405 DSA 605 BC 7360540 NSA 795 BBC 7360550 A = Anode, K = Cathode DSA 607 DSA 707 DSA 807 BBC 730489 3st DSD 304 Submitted by: