DS30217 Rev. 6 - 2 1 of 3 1N5819HW
Features
1N5819HW
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
A
B
C
D
E
G
H
J
Maximum Ratings @ TA = 25°C unless otherwise specified
·Schottky Barrier Chip
·Guard Ring Die Construction for
Transient Protection
·Low Power Loss, High Efficiency
·High Surge Capability
·High Current Capability and Low Forward
Voltage Drop
·For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
Mechanical Data
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic Symbol 1N5819HW Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage @ IR = 1.0mA
DC Blocking Voltage
VRRM
VRWM
VR
40 V
RMS Reverse Voltage VR(RMS) 28 V
Average Rectified Output Current @ TL = 90°CIO1.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM 25 A
Power Dissipation (Note 2) Pd450 mW
Typical Thermal Resistance Junction to Ambient (Note 2) RqJA 222 °C/W
Operating and Storage Temperature Range Tj, TSTG -65 to +125 °C
·Case: SOD-123, Plastic
·Plastic Material: UL Flammability
Classification Rating 94V-0
·Moisture sensitivity: Level 1 per J-STD-020A
·Polarity: Cathode Band
·Leads: Solderable per MIL-STD-202,
Method 208
·Marking: Date Code and Type Code, See Page 3
·Type Code: SL
·Weight: 0.01 grams (approx.)
·Ordering Information: See Page 3
TCUDORPWEN
SOD-123
Dim Min Max
A 3.55 3.85
B 2.55 2.85
C 1.40 1.70
D — 1.35
E 0.55 Typical
G 0.25 —
H 0.11 Typical
J — 0.10
a0°8°
All Dimensions in mm
DS30217 Rev. 6 - 2 2 of 3 1N5819HW
I , AVERAGE
O
UTPUT CURRENT (A)
O
0
0.2
0.4
0.6
0.8
1.0
10 40 60 80 100 120 140
T , TERMINAL TEMPERATURE (ºC)
T
Fig. 1 Forward Current Derating Curve
Single Pulse Half-Wave
60 Hz Resistive or Inductive Load
10
100
1000
0.1 1.0 10 100
C,T
O
TAL CAPACITANCE (pF)
T
V , REVERSE VOLTAGE (V)
R
Fig. 4 Typical Total Capacitance
T = 25ºC
j
f=1MHz
0
5
10
15
20
25
110100
I , PEAK F
O
RWARD SURGE CURRENT (A)
FSM
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Peak Fwd Surge Current
8.3ms Single Half Sine-Wave
JEDEC Method
00.5
I , INSTANTANE
O
US F
O
RWARD CURRENT (A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig. 2 Typical Forward Characteristics
0
1
2
5
4
3
1.0
00.5
I , INSTANTANE
O
US F
O
RWARD CURRENT (A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig. 2 Typical Forward Characteristics
0
1
2
5
4
3
1.0
T = 25°C
j
T = 125°C
j
Pulse Width = 300 ms
2% Duty Cycle
TCUDORPWEN
Notes: 1. Short duration pulse test used to minimize self-heating effect.
2. Device mounted on FR-4 PC Board, 2”x2”, 2 oz. Copper, single sided, Cathode pad dimensions 0.75”x1.0”,
Anode pad dimensions 0.25”x1.0”.
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 1) V(BR)R 40 ¾¾VIR = 1.0mA
Forward Voltage (Note 1) VF
¾
¾
¾
¾
¾
¾
0.320
0.450
0.750
V
IF = 0.1A
IF = 1.0A
IF = 3.0A
Reverse Leakage Current (Note 1) IR
¾
¾
¾
¾
¾
¾
¾
¾
10
1
15
1.5
1.0
10
50
2
75
3
mA
mA
mA
mA
mA
mA
VR = 40V, TA = 25°C
VR = 40V, TA = 100°C
VR = 4V, TA = 25°C
VR = 4V, TA = 100°C
VR = 6V, TA = 25°C
VR = 6V, TA = 100°C
Total Capacitance CT¾110 ¾pF VR = 4V, f = 1.0MHz
Electrical Characteristics @ TA = 25°C unless otherwise specified
DS30217 Rev. 6 - 2 3 of 3 1N5819HW
25
50
75
100
125
150
110 20 50
40
30
T , AMBIENT TEMPERATURE ( )
AºC
V , REVERSE VOLTAGE (V)
R
Fig. 5 Typical Safe Operating Area
R(q) = 300°C/W
JA
Note 1
0.001
0.01
0.1
1.0
10.0
I , INSTANTANE
O
US REVERSE CURRENT (mA)
R
0
V , RATED PEAK REVERSE VOLTAGE (V)
R
Fig. 6 Typical Reverse Characteristics
510 15 20 25 30 35 40 45
T=25°C
j
T=75°C
j
TCUDORPWEN
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
Year 2001 2002 2003 2004 2005 2006 2007 2008
Code MNPR
STU V
Date Code Key
XX = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
XX
YM
Marking Information
Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Device Packaging Shipping
1N5819HW-7 SOD-123 3000/Tape & Reel
Ordering Information (Note 3)
