/ 1N957B, -1 fo. thru Microsemi Corp. 1N992B, -1 ? The diode experts / DO-35 SCOTTSDALE, AZ For more information call: (602) 941-6300 FEATURES SILICON 6.8 TO 200V ZENER VOLTAGE RANGE 500 mw 1N962B-1 THRU 1N9Q2B-1 AVAILABLE IN JAN, JANTX AND JANTXV QUALIFICATIONS ZENER DIODES TO MIL-S-19500/117. DIE ALSO AVAILABLE AS JANHC FOR HYBRIDS. METALLURGICALLY BONDED DEVICE TYPES CONSULT FACTORY FOR VOLTAGES ABOVE 200V MAXIMUM RATINGS ooh Steady State Power Dissipation: 500 mW : | | Operating and Storage Temperature: - 65C to + 175C one MAX qv Derating Factor Above 50C: 4.0 mW/C , Forward Voltage @ 200 mA: 1.5 Volts +000 35.ap9 MIN. ELECTRICAL CHARACTERISTICS @ 24C NOMINAL ] MAX. OC | MAX. SURGE | MAX. REVERSE ~ seoee ZENER weer MAX, ZENER IMPEDANCE | ZENER | CURRENT LEAKAGE POLARITY a MAX. TYPE VOLTAGE | curpenT (Note 3, CURRENT |(RECURRENT)| CURRENT MAX. TEMP. MARK Aaa numBer | (Note 2+ re i iNote 4: | Note 53 COEFFICIENT {CATHODE} I iNcte Vr " 211 @ Itt tnx @ le | bem Iz (SURGE) te Ve Ove VOLTS ma OHMS OHMS. mA mA mA wa VOLTS %lee 19578 68 | 185 a5] 700 | 10 55 300 160 [| 5.2] 40.08 1.000 gary 1N9S8B 75 | 165 55| 700 5 50 275 75 | 57 | 40.058 25.400" 1N9598 82 15.0 6.5 700 5 45 250 50. 6.2 +0.065 0.018/0.022 pw. j- 1N3608 9.1 14.0 751 700 4 4 225 25 | 69] +0.068 0.457/0.559 1N9618 10 12.5 8.5} 700 25 38 200 10 | 7.6] +0.075 ' 1N9678 n 15 95 | 700 25 32 175 5 | 84] 40.076 moe 7 1N963B 12 10.5 1.5] 700 25 3 160 Ss | 911 40077 FIGURE 1 1N9648 3 95 13.0} 700 25 28 150 5) 99] 40.079 1N965B 15 8.5 16 700 125 25 130 5] 114 +0.082 . . _ INCH 1N9668 16 78 v7 700 25 24 120 s | 122 | +0.083 All dimensions in 1N967B 18 7.0 21 750 25 20 110 5 | 13.7] 40.085 1N9688 20 62 25 750 25 18 100 5 | 152| +4o0086 1N9E9B 22 5.6 29 750 125 16 90 5 | 167 | 40.087 MECHANICAL 1n9708 24 5.2 33 750 25 5 80 5 | 182] 40.088 CHARACTERISTICS 1N9718 27 46 4l 750 2 13 1 5 |} 206 | 40.090 . : CASE: Hermetically sealed glass 1N972B 30 42 49 1000 25 12 65 s | 228] 40.091 se. DO-35 g 1N9738 33 38 58 1000 25 M 60 5 | 251] 40.092 case. DO-35. IN974B 36 3.4 70 1000 125 10 55 5 27.4 +0,.093 . 1N9758 9 32 80 1000 OS 95 26 5 | 297 | 49.094 FINISH: All external surfaces are | 19766 43 3.0 93 1500 25 a8 44 5 | 327] 40.095 corrosion resistant and leads sol- 1N977B a7 27 105 1500 25 79 40 5 | 358 40.095 derable. 19788 51 25 125 1500 25 74 37 5 | 368] +0.096 1N9798 56 2.2 150 | 2000 25 6.8 35 5 | 426] 40.096 THERMAL RESISTANCE: 200C/ TN9BOB 62 2.0 185 2000 25 6.0 30 5 47.1 +0.097 W (Typi ju i : 19818 68 18 230 2000 25 55 28 5 | 517] 40.097 0 Be cel tunction fo kad + .375- 6 y. Metal- 19878 75 17 270 2000 25 5.0 26 5 | 560] 40.098 : z an 19838 82 15 330 | 3000 25 46 23 5 | 622] -+0.098 lurgically bonded DO-35s exhibit 1N9848 91 14 400 3000 25 4a. 21 5 | 69.2) 40.099 less than 100C/W at zero dis- rrr. 100 13 500 | 3000 25 37 18 s | 760} +011 1N9868 110 Ml 750 | 4000 23} 33 16 5 | 936] +0.21 tance from body. 169878 120 10 900 4500 25 31 15 5 7 912 +0.11 POLARITY: Diode to be operated 1N9888 130 0.95 1100 | 5000 25 27 13 5 | 988] 40.11 i . iti 1N989B 150 0.85 1500 | 6000 25 24 12 5 juao| +00 with the banded end positive 19908 160 0.80 1700 | 6500 5 22 H 5 Jie | +01 with respect to the opposite end. 1N991B 180 0.68 2200 7100 5 2.0 10 5 | 1368} 40.11 1N9928 200 0.65 2600 8000 25 18 8 5 | 1520 +011 WEIGHT: 0.2 grams. *JEDEC Registered Data MOUNTING POSITION: Any. 5-13 5-14 1N957B, -1 thru 1N992B, -1 DO-35 NOTE1 The JEDEC type numbers shown (B suffix) have a +5% tolerance on nominal zener voltage. The suffix A is used to identify + 10% tolerance; suffix C is used to identify +2%; and suffix D is used to identify +1% tolerance; no suffix indicates + 20% tolerance. NOTE 2 Zener voltage (Vz) is measured after the test current has been applied for 20 +5 seconds. The device shall be suspended by its leads with the inside edge of the mounting clips between .375 and .500 from the body. Mounting clips shall be maintained at a temperature of 25 +8/-2C. NOTE 3 The zener impedance is derived from the 60 cycle A.C. voltage, which results when an A.C. current 200 175 Q TAGE TEMPERATURE 150 COEFFICIENT % /* 125 a oe oS 100 a 2 oS 75 Qo a a 50 Q Dp oa Oo /AW INFID144909 JUNLVYIdWIAL TEMPERATURE COEFFICIENT %/C 25 2 a o 0 So S S NOMINAL ZENER VOLTAGE (VOLTS) FIGURE 2 ZENER VOLTAGE TEMPERATURE COEFF. vs. ZENER VOLTAGE CAPACITANCE vs, Vz CURVE TYPICAL CAPACITANCE IN PICOFARADS Qo 2 having an R.M.S. value equal to 10% of the D.C. zener current (Iz7 or I7x) is superimposed on Iz7 or I7x. Zener impedance is measured at 2 points to insure a sharp knee on the breakdown curve and to eliminate unstable units. NOTE 4 The values of Izy are calculated for a +5% tolerance on nominal zener voltage. Allowance has been made for the rise in zener voltage above Vz7 which results from zener impedance and the increase in junction temperature as power dissipation approaches 400 mW. In the case of individual diodes Izy is that value of current which results in a dissipation of 400 mW at 75C lead temperature at 3/8 from body. NOTE 5 Surge is 1/2 square wave or equivalent sine wave pulse of 1/120 sec. duration. 500 400 300 200 100 RATED POWER DISSIPATION - mW 0 0 25 50 75 100 125 150175 TL Lead temperature (C) 3/8" from body FIGURE 3 POWER DERATING CURVE 60 BO 100 12 140 160 180 200 20 ZENER VOLTAGE Vz FIGURE 4 CAPACITANCE VS. ZENER VOLTAGE (TYPICAL)