MBR10L100CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA TO-220AB Case: TO-220AB Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 5 in-lbs maximum Weight: 1.9 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted) PARAMETER SYMBOL MBR10L100CT UNIT Maximum repetitive peak reverse voltage VRRM 100 V Maximum RMS voltage VRMS 70 V Maximum DC blocking voltage VDC 100 V Maximum average forward rectified current IF(AV) 10 A Peak repetitive forward current (Rated VR, Square Wave, 20KHz) IFRM 10 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 120 A Peak repetitive reverse surge current (Note 1) IRRM Maximum instantaneous forward voltage (Note 2) IF= 5A, TJ=25 IF= 5A, TJ=125 IF=10A, TJ=25 IF=10A, TJ=125 Maximum reverse current @ rated VR TJ=25 TJ=125 Voltage rate of change (Rated VR) Typical thermal resistance Operating junction temperature range Storage temperature range VF IR dV/dt 1 A TYP MAX 0.73 0.76 0.59 0.65 0.82 0.85 0.66 0.71 TYP MAX 0.30 20 A 0.50 15 mA 10000 V V/s O RJC 2.8 TJ - 55 to +150 O C - 55 to +150 O C TSTG C/W Note 1: tp = 2.0 s, 1.0KHz Note 2: Pulse test with PW=300s, 1% duty cycle Document Number: DS_D1308037 Version: G13 MBR10L100CT Taiwan Semiconductor CREAT BY ART ORDERING INFORMATION AEC-Q101 PART NO. PACKING CODE QUALIFIED Prefix "H" MBR10L100CT C0 GREEN COMPOUND CODE Suffix "G" PACKAGE PACKING TO-220AB 50 / Tube EXAMPLE AEC-Q101 PREFERRED P/N PART NO. MBR10L100CT C0 MBR10L100CT C0 MBR10L100CT C0G MBR10L100CT C0 MBR10L100CTHC0 MBR10L100CT QUALIFIED PACKING CODE H GREEN COMPOUND DESCRIPTION CODE G Green compound C0 AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) AVERAGE FORWARD A CURRENT (A) 12 10 8 6 4 RESISTIVE OR INDUCTIVE LOAD WITH HEATSINK 2 0 0 25 50 75 100 125 150 PEAK FORWARD SURGE CURRENT (A) FIG.1 FORWARD CURRENT DERATING CURVE FIG. 2 MAXIMUM FORWARD SURGE CURRENT 175 8.3ms Single Half Sine Wave JEDEC Method 150 125 100 75 50 25 0 1 10 CASE TEMPERATURE (oC) FIG. 3 TYPICAL FORWARD CHARACTERISTICS FIG. 4 TYPICAL REVERSE CHARACTERISTICS 100 10000 REVERSE LEAKAGE CURRENT (A) FORWARD CURRENT (A) 100 NUMBER OF CYCLES AT 60 Hz 10 TJ=125 1 TJ=25 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 FORWARD VOLTAGE (V) Document Number: DS_D1308037 0.8 0.9 1 1000 100 TJ=125 10 1 0.1 TJ=25 0.01 10 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version: G13 MBR10L100CT Taiwan Semiconductor CREAT BY ART FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE PER LEG FIG. 5 TYPICAL JUNCTION CAPACITANCE 1000 100 TRANSIENT THERMAL IMPEDANCE (/W) JUNCTION CAPACITANCE (pF) A 1000 100 f=1.0MHz Vsig=50mVp-p 10 0.1 1 10 100 10 1 0.1 0.01 0.1 1 REVERSE VOLTAGE (V) 10 100 T-PULSE DURATION(s) PACKAGE OUTLINE DIMENSIONS DIM. Unit (mm) Unit (inch) Min Max Min Max A - 10.50 - 0.413 B 2.62 3.44 0.103 0.135 C 2.80 4.20 0.110 0.165 D 0.68 0.94 0.027 0.037 E 3.54 4.00 0.139 0.157 F 14.60 16.00 0.575 0.630 G 13.19 14.79 0.519 0.582 H 2.41 2.67 0.095 0.105 I 4.42 4.76 0.174 0.187 J 1.14 1.40 0.045 0.055 K 5.84 6.86 0.230 0.270 L 2.20 2.80 0.087 0.110 M 0.35 0.64 0.014 0.025 MARKING DIAGRAM P/N = Specific Device Code G = Green Compound YWW = Date Code F = Factory Code Document Number: DS_D1308037 Version: G13 MBR10L100CT Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D1308037 Version: G13 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Taiwan Semiconductor: MBR10L100CT MBR10L100CT C0 MBR10L100CTHC0