CREAT BY ART
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
SYMBOL UNIT
V
RRM
V
V
RMS
V
V
DC
V
I
F(AV)
A
I
RRM
A
μA
mA
dV/dt V/μs
R
θJC O
C/W
T
JO
C
T
STG O
C
Document Number: DS_D1308037 Version: G13
MBR10L100CT
Taiwan Semiconductor
Dual Common Cathode Schottk
y
Rectifier
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA TO-220AB
Case: TO-220AB
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.9 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise noted)
PARAMETER MBR10L100CT
Maximum repetitive peak reverse voltage 100
Maximum RMS voltage 70
Maximum DC blocking voltage 100
Maximum average forward rectified current 10
Peak repetitive forward current
(Rated VR, Square Wave, 20KHz) I
FRM
10 A
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load I
FSM
120 A
Peak repetitive reverse surge current (Note 1) 1
Maximum instantaneous forward voltage (Note 2)
I
F
= 5A, T
J
=25℃
I
F
= 5A, T
J
=125℃
I
F
=10A, T
J
=25℃
I
F
=10A, T
J
=125℃
V
F
TYP MAX
V
0.73 0.76
0.59 0.65
0.82 0.85
0.66 0.71
Maximum reverse current @ rated VR
T
J
=25 ℃
T
J
=125 ℃
I
R
TYP MAX
0.30 20
0.50 15
Storage temperature range - 55 to +150
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
Voltage rate of change (Rated V
R
)10000
Typical thermal resistance 2.8
Operating junction temperature range - 55 to +150
CREAT BY ART
PART NO.
MBR10L100CT
PART NO.
MBR10L100CT
MBR10L100CT
MBR10L100CT
(TA=25℃ unless otherwise noted)
Document Number: DS_D1308037 Version: G13
MBR10L100CT
Taiwan Semiconductor
ORDERING INFORMATION
AEC-Q101
QUALIFIED PACKING CODE GREEN COMPOUND
CODE PACKAGE PACKING
Prefix "H" C0 Suffix "G" TO-220AB 50 / Tube
EXAMPLE
PREFERRED P/N AEC-Q101
QUALIFIED PACKING CODE GREEN COMPOUND
CODE DESCRIPTION
MBR10L100CT C0 C0
MBR10L100CT C0G C0 G Green compound
MBR10L100CTHC0 H C0 AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
0
2
4
6
8
10
12
0 25 50 75 100 125 150
AVERAGE FORWARD A
CURRENT (A)
CASE TEMPERATURE (oC)
FIG.1 FORWARD CURRENT DERATING CURVE
RESISTIVE OR
INDUCTIVE LOAD
WITH HEATSINK
0
25
50
75
100
125
150
175
1 10 100
PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 2 MAXIMUM FORWARD SURGE
CURRENT
8.3ms Single Half Sine Wave
JEDEC Method
0.01
0.1
1
10
100
1000
10000
10 20 30 40 50 60 70 80 90 100
REVERSE LEAKAGE CURRENT (μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
TJ=125℃
TJ=25℃
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
TJ=125℃
TJ=25℃
CREAT BY ART
Min Max Min Max
A - 10.50 - 0.413
B 2.62 3.44 0.103 0.135
C 2.80 4.20 0.110 0.165
D 0.68 0.94 0.027 0.037
E 3.54 4.00 0.139 0.157
F 14.60 16.00 0.575 0.630
G 13.19 14.79 0.519 0.582
H 2.41 2.67 0.095 0.105
I 4.42 4.76 0.174 0.187
J 1.14 1.40 0.045 0.055
K 5.84 6.86 0.230 0.270
L 2.20 2.80 0.087 0.110
M 0.35 0.64 0.014 0.025
P/N = Specific Device Code
G = Green Compound
YWW = Date Code
F = Factory Code
Document Number: DS_D1308037 Version: G13
MARKING DIAGRAM
MBR10L100CT
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM. Unit (mm) Unit (inch)
10
100
1000
0.1 1 10 100
JUNCTION CAPACITANCE (pF) A
REVERSE VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vsig=50mVp-p
0.1
1
10
100
1000
0.01 0.1 1 10 100
TRANSIENT THERMAL
IMPEDANCE (℃/W)
T-PULSE DURATION(s)
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
CREAT BY ART
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1308037 Version: G13
MBR10L100CT
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
